Search Results - "Piner, Edwin"

Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices by Yates, Luke, Anderson, Jonathan, Gu, Xing, Lee, Cathy, Bai, Tingyu, Mecklenburg, Matthew, Aoki, Toshihiro, Goorsky, Mark S, Kuball, Martin, Piner, Edwin L, Graham, Samuel

“…The development of GaN-on-diamond devices holds much promise for the creation of high-power density electronics. Inherent to the growth of these devices, a…”
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Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer by Siddique, Anwar, Ahmed, Raju, Anderson, Jonathan, Holtz, Mark, Piner, Edwin L

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Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiN x Passivation Layer by Siddique, Anwar, Ahmed, Raju, Anderson, Jonathan, Holtz, Mark, Piner, Edwin L

“…In situ metal–organic chemical vapor deposition growth of SiN x passivation layers is reported on AlGaN/GaN high-electron-mobility transistors (HEMTs) without…”
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Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs by Siddique, Anwar, Ahmed, Raju, Anderson, Jonathan, Piner, Edwin L.

“…•In-Situ SiNx passivated AlGaN/GaN HEMTs on Si were grown by MOCVD.•For SiNx growth rate <10 nm/h, SiH4 induced III-N layer etching was prevalent.•Increased…”
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Effect of CH4 concentration on the early growth stage of patterned diamond using high seeding density and hot filament chemical vapor deposition by Nugera, Florence A., Devkota, Dipa, Anupam, K. C., Ayala, Anival, Aryal, Ganesh, Engdahl, Chris, Piner, Edwin L., Holtz, Mark W.

“…A bottom-up method is described to grow patterned polycrystalline diamond on silicon substrates using polymer assisted seeding and photolithography. Diamond…”
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Self-Heating Profile in an AlGaN/GaN Heterojunction Field-Effect Transistor Studied by Ultraviolet and Visible Micro-Raman Spectroscopy by Nazari, Mohammad, Hancock, Bobby Logan, Piner, Edwin L., Holtz, Mark W.

“…Direct measurements of self-heating in gallium nitride (GaN) transistor using ultraviolet (UV) and visible micro-Raman spectroscopy are reported. The material…”
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Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD by Siddique, Anwar, Ahmed, Raju, Anderson, Jonathan, Nazari, Mohammad, Yates, Luke, Graham, Samuel, Holtz, Mark, Piner, Edwin L

“…Integration of diamond and AlGaN/GaN high-electron mobility transistors (HEMTs) terminated with an in situ grown SiN x interface layer via metal organic…”
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RF Dielectric Loss Due to MOCVD Aluminum Nitride on High Resistivity Silicon by Berber, Feyza, Johnson, Derek W., Sundqvist, Kyle M., Piner, Edwin L., Huff, Gregory H., Rusty Harris, H.

“…The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via…”
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Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs by Chung, J.W., Roberts, J.C., Piner, E.L., Palacios, T.

“…This letter studies the effect of gate leakage on the subthreshold slope and ON/OFF current ratio of AlGaN/GaN high-electron mobility transistors (HEMTs). We…”
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Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors by Bin Lu, Piner, E.L., Palacios, T.

“…In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by…”
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Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability by Chunhua Zhou, Chen, W, Piner, Edwin L, Chen, Kevin J

“…In this letter, we propose an AlGaN/GaN normally off high-electron mobility transistor (HEMT) with reverse drain blocking capability. The device features a…”
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Observation of terahertz radiation coherently generated by acoustic waves by Kim, Ki-Yong, Glownia, James H, Piner, Edwin L, Armstrong, Michael R, Howard, William M, Roberts, John C, Reed, Evan J

“…Over the past decade, pioneering and innovative experiments using subpicosecond lasers have demonstrated the generation and detection of acoustic and shock…”
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PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures by Gatabi, Iman Rezanezhad, Johnson, Derek W., Woo, Jung Hwan, Anderson, Jonathan W., Coan, Mary R., Piner, Edwin L., Harris, Harlan Rusty

“…This paper investigates the optimization of PECVD \alpha -SiN-passivated AlGaN/GaN heterostructures to achieve higher 2-D electron gas (2DEG) densities and…”
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N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology by Chung, J.W., Piner, E.L., Palacios, T.

“…We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency…”
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107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies by Tirelli, S., Marti, D., Haifeng Sun, Alt, A.R., Benedickter, H., Piner, E.L., Bolognesi, C.R.

“…We report high-speed fully passivated deep submicrometer (Al,Ga)N/GaN high-electron mobility transistors (HEMTs) grown on (111) high-resistivity silicon with…”
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Thin-Body N-Face GaN Transistor Fabricated by Direct Wafer Bonding by Ryu, K. K., Roberts, J. C., Piner, E. L., Palacios, T.

“…This letter presents a method to fabricate thin-body N-face GaN-on-insulator-on-Si (100) wafers. These new wafers are promising to increase the carrier…”
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Self-Heating in a GaN-Based Heterojunction Field-Effect Transistor Investigated by Ultraviolet and Visible Micro-Raman Spectroscopy by Nazari, Mohammad, Hancock, Bobby Logan, Piner, Edwin L., Holtz, Mark W.

“…Direct measurements are reported of self-heating in an AlGaN/GaN transistor using ultraviolet and visible micro-Raman. Device stack is comprised of silicon…”
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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology by Johnson, Derek W., Lee, Rinus T. P., Hill, Richard J. W., Man Hoi Wong, Bersuker, Gennadi, Piner, Edwin L., Kirsch, Paul D., Harris, H. Rusty

“…We report on the investigation of the charge trapping characteristics of dielectric-gated AlGaN/GaN high electron mobility transistors (HEMTs) with atomic…”
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Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate by Bin Lu, Piner, Edwin L, Palacios, Tomas

“…AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low…”
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Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs by Chung, J.W., Jae-kyu Lee, Piner, E.L., Palacios, T.

“…The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible…”
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