Semiconductor lasers in gain-switching mode for high power sub-ns optical pulses

Broad-arealasers with a 100 \ \mu \mathrm{m} aperture based on heterostructures with double asymmetry and active regions at wavelengths of 850 nm using bulk 45 nm GaAs and at 970 nm using quantum wells were investigated. Output optical powers in the single first relaxation peak regime from 12 to 22...

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Bibliographic Details
Published in:	2024 International Conference Laser Optics (ICLO) p. 144
Main Authors:	Shushkanov, I.V., Podoskin, A.A., Zadorozhniy, M.G., Klimov, A.A., Vavilova, L.S., Slipchenko, S.O., Pikhtinx, N.A.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-07-2024
Subjects:	Apertures gain switching Gallium arsenide Integrated optics Laser modes optical pulse generation Optical switches Power lasers Quantum well lasers semiconductor laser
Online Access:	Get full text
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Summary:	Broad-arealasers with a 100 \ \mu \mathrm{m} aperture based on heterostructures with double asymmetry and active regions at wavelengths of 850 nm using bulk 45 nm GaAs and at 970 nm using quantum wells were investigated. Output optical powers in the single first relaxation peak regime from 12 to 22 W were achieved with pulse durations from 100 to 150 ps.
ISSN:	2642-5580
DOI:	10.1109/ICLO59702.2024.10624294