Search Results - "Pikhtin, N. A."

Isotype n-AlGaAs/n-GaAs Heterostructures Optimized for Efficient Interband Radiative Recombination under Current Pumping by Soboleva, O. S., Slipchenko, S. O., Pikhtin, N. A.

“…Carrier transport in an isotype AlGaAs/GaAs heterostructure optimized for efficient radiative recombination under current pumping is investigated. The features…”
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Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness by Sokolova, Z. N., Pikhtin, N. A, Slipchenko, S. O., Asryan, L. V.

“…The performance characteristics of semiconductor lasers based on quantum wells (QWs) are theoretically studied as functions of the thickness of the waveguide…”
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Switching (Turn-on) Dynamics of Low-Voltage InP Homothyristors by Slipchenko, S. O., Soboleva, O. S., Podoskin, A. A., Kirichenko, Y. K., Bagaev, T. A., Yarotskaya, I. V., Pikhtin, N. A.

“…A series of heterostructure designs of low-voltage InP homothyristors have been investigated using numerical simulation methods. The design with a space charge…”
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Spectroscopic Studies of Integrated GaAs/Si Heterostructures by Seredin, P. V., Goloshchapov, D. L., Arsentyev, I. N., Nikolaev, D. N., Pikhtin, N. A., Slipchenko, S. O.

“…The purpose of the study is to investigate the effect of a new type of compliant substrates based on an AlGaAs superstructure layer (SL) and a protoporous Si…”
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Analysis of the Threshold Conditions and Lasing Efficiency of Internally Circulating Modes in Large Rectangular Cavities Based on AlGaAs/GaAs/InGaAs Laser Heterostructures by Podoskin, A. A., Romanovich, D. N., Shashkin, I. S., Gavrina, P. S., Sokolova, Z. N., Slipchenko, S. O., Pikhtin, N. A.

“…The threshold conditions and operating efficiency of a semiconductor laser emitter with a large rectangular cavity (1 × 1 mm) based on an AlGaAs/GaAs/InGaAs…”
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Modeling the Spatial Switch-On Dynamics of a Laser Thyristor (λ = 905 nm) Based on an AlGaAs/InGaAs/GaAs Multi-Junction Heterostructure by Soboleva, O. S., Golovin, V. S., Yuferev, V. S., Gavrina, P. S., Pikhtin, N. A., Slipchenko, S. O., Podoskin, A. A.

“…A 2D carrier transport model to be used in studying the spatial current dynamics in laser thyristors is presented. The model takes into account such features…”
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Study of the Spatial and Current Dynamics of Optical Loss in Semiconductor Laser Heterostructures by Optical Probing by Gavrina, P. S., Soboleva, O. S., Podoskin, A. A., Kazakova, A. E., Kapitonov, V. A., Slipchenko, S. O., Pikhtin, N. A.

“…The spatial and temporal dynamics of the optical loss and carrier density in the heterostructure of a semiconductor laser with a segmented contact are studied…”
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Switching Control Model of Closed-Mode Structures in Large Rectangular Cavities Based on AlGaAs/InGaAs/GaAs Laser Heterostructures by Podoskin, A. A., Romanovich, D. N., Shashkin, I. S., Gavrina, P. S., Sokolova, Z. N., Slipchenko, S. O., Pikhtin, N. A.

“…A lumped model of the dynamics of the controlled switching of high- Q closed-mode structures in rectangular large cavities (up to 1 × 1 mm and larger) based on…”
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Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon by Seredin, P. V., Goloshchapov, D. L., Khudyakov, Yu. Yu, Arsentyev, I. N., Nikolaev, D. N., Pikhtin, N. A., Slipchenko, S. O., Leiste, Harald

“…The purpose of the study is to investigate the effect of a new type of compliant substrate based on an AlGaAs superstructure layer (SL) and a protoporous Si…”
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Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers by Podoskin, A. A., Romanovich, D. N., Shashkin, I. S., Gavrina, P. S., Sokolova, Z. N., Slipchenko, S. O., Pikhtin, N. A.

“…This study is concerned with the specific features of how high-Q closed modes operating on the total-internal-reflection effect in large-size (up to hundreds…”
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High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence by Slipchenko, S. O., Podoskin, A. A., Nikolaev, D. N., Shamakhov, V. V., Shashkin, I. S., Kondratov, M. I., Gordeev, I. N., Grishin, A. E., Kazakova, A. E., Gavrina, P. S., Bakhvalov, K. V., Kop’ev, P. S., Pikhtin, N. A.

“…The effect of the active region design on the vertical far-field divergence is studied for high-power laser diodes based on asymmetric heterostructures with a…”
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Metal–Dielectric Mirror Coatings for 4–5-μm Quantum-Cascade Lasers by Podgaetskii, K. A., Lobintsov, A. V., Danilov, A. I., Ivanov, A. V., Ladugin, M. A., Marmalyuk, A. A., Kuznetsov, E. V., Dyudelev, V. V., Mikhailov, D. A., Chistyakov, D. V., Babichev, A. V., Kognovitskaya, E. A., Lyutetskii, A. V., Slipchenko, S. O., Pikhtin, N. A., Gladyshev, A. G., Novikov, I. I., Karachinsky, L. Ya, Egorov, A. Yu, Sokolovskii, G. S.

“…We report the results of a comparison of metal–dielectric mirror coatings for mid-IR quantum-cascade lasers (QCLs). Samples of QCLs with Al 2 O 3 /Ti/Au and…”
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Dielectric Highly Reflective Mirror Coatings for 4–5 μm Quantum Cascade Lasers by Podgaetskii, K. A., Lobintsov, A. V., Danilov, A. I., Ivanov, A. V., Ladugin, M. A., Marmalyuk, A. A., Dyudelev, V. V., Mikhailov, D. A., Chistyakov, D. V., Babichev, A. V., Savchenko, G. M., Lyutetskii, A. V., Slipchenko, S. O., Pikhtin, N. A., Gladyshev, A. G., Novikov, I. I., Karachinskii, L. Ya, Egorov, A. Yu, Sokolovskii, G. S.

“…Dielectric mirrors for mid-IR quantum cascade lasers are calculated. Optimal dielectric materials are selected to minimize the absorption of laser radiation…”
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Dynamics of Laser Generation in Single-Mode Microstripe Semiconductor Laser Bar (1065 nm) Operating in Gain-Swithching Mode by Podoskin, A. A., Shushkanov, I. V., Rizaev, A. E., Krychkov, V. A., Grishin, A. E., Pikhtin, N. A.

“…The study investigates microstripe bars of optically isolated single-mode lasers based on heterostructures with double asymmetry, operating under…”
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High peak optical power of 1ns pulse duration from laser diodes – low voltage thyristor vertical stack by Slipchenko, S. O., Podoskin, A. A., Golovin, V. S., Romanovich, D. N., Shamakhov, V. V., Nikolaev, D. N., Shashkin, I. S., Pikhtin, N. A., Bagaev, T. A., Ladugin, M. A., Marmalyuk, A. A., Simakov, V. A.

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Optimization of Cavity Parameters of High-Power InGaAs/AlGaAs/GaAs Laser Diodes (λ = 1060 nm) for Efficient Operation at Ultrahigh Pulsed Pump Currents by Slipchenko, S. O., Soboleva, O. S., Golovin, V. S., Pikhtin, N. A.

“…Using the developed 2D numerical model of laser diodes, we study the effect of the cavity characteristics on the loss, and analyze the choice of the cavity…”
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Observation of Long Turn-On Delay in Pulsed Quantum Cascade Lasers by Cherotchenko, E. D., Dudelev, V. V., Mikhailov, D. A., Losev, S. N., Babichev, A. V., Gladyshev, A. G., Novikov, I. I., Lutetskiy, A. V., Veselov, D. A., Slipchenko, S. O., Pikhtin, N. A., Karachinsky, L. Ya, Denisov, D. V., Kuchinskii, V. I., Kognovitskaya, E. A., Egorov, A. Yu, Teissier, R., Baranov, A. N., Sokolovskii, G. S.

“…We present an experimental study of the turn-on delay in pulsed mid-infrared quantum cascade lasers. We report the unexpectedly long delay time depending on…”
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High-Current Low-Voltage Switches for Nanosecond Pulse Durations Based on Thyristor (Al)GaAs/GaAs Homo- and Heterostructures by Slipchenko, S. O., Podoskin, A. A., Shushkanov, I. V., Krychkov, V. A., Rizaev, A. E., Kondratov, M. I., Grishin, A. E., Pikhtin, N. A., Bagaev, T. A., Svetogorov, V. N., Ladugin, M. A., Marmalyuk, A. A., Simakov, V. A.

“…A series of low-voltage thyristor current switches based on (Al)GaAs/GaAs homo- and heterostructures with a volume charge region formed in the lightly doped p…”
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Mode Selection of a Lateral Waveguide for Single-Mode Operation of Lasers with a Distributed Bragg Reflector by Zolotarev, V. V., Rizaev, A. E., Lutetskiy, A. V., Slipchenko, S. O., Pikhtin, N. A.

“…The possibilities for mode selection in mesa-stripe lateral waveguides for single-mode operation of lasers with a surface distributed Bragg reflector (DBR) are…”
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Quasi-CW, High-Power, Extended-Cavity Laser Diode Microarrays (λ = 976 nm) Based on Asymmetric Heterostructures with an Ultrawide Waveguide by Slipchenko, S. O., Podoskin, A. A., Kryuchkov, V. A., Strelets, V. A., Shashkin, I. S., Pikhtin, N. A.

“…We report the development of laser diode microarrays with a cavity length of 6 mm, which include emitting regions 5 × 100 μm in size with a fill factor of 25%…”
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