Search Results - "Pierre Perreau"

On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells by Mazurier, J., Weber, O., Andrieu, F., Toffoli, A., Rozeau, O., Poiroux, T., Allain, F., Perreau, P., Fenouillet-Beranger, C., Thomas, O., Belleville, M., Faynot, O.

“…In this paper, an in-depth variability analysis, i.e., from the threshold voltage V T of metal-oxide-semiconductor field-effect-transistors (MOSFETs) to the…”
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Highly transparent piezoelectric PZT membranes for transducer applications by Pavageau, Franklin, Dieppedale, Christel, Perreau, Pierre, Liechti, Romain, Hamelin, Antoine, Licitra, Christophe, Casset, Fabrice, Le Rhun, Gwenaël

“…Transparent PZT-based membranes were fabricated out of 200 mm silicon wafers thanks to an innovative layer transfer process. The ITO (100 nm)/PZT (1.16 µm)/ITO…”
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Highly transparent PZT capacitors on glass obtained by layer transfer process by Le Rhun, Gwenael, Pavageau, Franklin, Wagué, Baba, Perreau, Pierre, Licitra, Christophe, Frey, Laurent, Dieppedale, Christel

“…Transparent ITO/PZT/ITO capacitors were fabricated on 200 mm glass substrate. The PZT films of 1 µm and 2 µm thickness were first grown on platinized Si wafer…”
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Experimental investigation of ESD design window for fully depleted SOI N-MOSFETs by Benoist, Thomas, Fenouillet-Beranger, Claire, Perreau, Pierre, Buj, Christel, Galy, Philippe, Marin-Cudraz, David, Faynot, Olivier, Cristoloveanu, Sorin, Gentil, Pierre

“…[Display omitted] ► We tested silicided MOS with Transmission Line pulse tool. ► We examine the robustness of the devices and the impact of ground planes and…”
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High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: Vth Tuning, Variability, Access Resistance, and Mobility Issues by VILLALON, Anthony, LE ROYER, Cyrille, SCHEIBLIN, Pascal, ALLAIN, Fabienne, ANDRIEU, François, WEBER, Olivier, FAYNOT, Olivier, CRISTOLOVEANU, Sorin, CASSE, Mickael, COOPER, David, MAZURIER, Jérome, PREVITALI, Bernard, TABONE, Claude, PERREAU, Pierre, HARTMANN, Jean-Michel

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High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: V Tuning, Variability, Access Resistance, and Mobility Issues by Villalon, Anthony, Le Royer, Cyrille, Cristoloveanu, Sorin, Cassé, Mickaël, Cooper, David, Mazurier, Jaome, Previtali, Bernard, Tabone, Claude, Perreau, Pierre, Hartmann, Jean-Michel, Scheiblin, Pascal, Allain, Fabienne, Andrieu, Francois, Weber, Olivier, Faynot, Olivier

“…We report on ultrascaled (L G = 23 nm) compressively strained SiGe-based FDSOI pMOSFET with ultrathin body. The devices have been fabricated using a high-K…”
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FDSOI Floating Body Cell eDRAM Using Gate-Induced Drain-Leakage (GIDL) Write Current for High Speed and Low Power Applications by Puget, Sophie, Bossu, Germain, Fenouiller-Beranger, Claire, Perreau, Pierre, Masson, Pascal, Mazoyer, Pascale, Lorenzini, Philippe, Portal, Jean-Michel, Bouchakour, Rachid, Skotnicki, Thomas

“…A Capacitorless IT-DRAM cell using gate-induced drain leakage (GIDL) current for write operation was demonstrated for the first time on FDSOI substrate, 9.5 nm…”
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On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells : CHARACTERIZATION OF NANO CMOS VARIABIALITY BY SIMULATION AND MEASUREMENTS by MAZURIER, Jérôme, WEBER, Olivier, BELLEVILLE, Marc, FAYNOT, Olivier, ANDRIEU, François, TOFFOLI, Alain, ROZEAU, Olivier, POIROUX, Thierry, ALLAIN, Fabienne, PERREAU, Pierre, FENOUILLET-BERANGER, Claire, THOMAS, Olivier

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Fully Depleted Strained Silicon-on-Insulator p-MOSFETs With Recessed and Embedded Silicon-Germanium Source/Drain by Baudot, S, Andrieu, F, Weber, O, Perreau, P, Damlencourt, J, Barnola, S, Salvetat, T, Tosti, L, Brevard, L, Lafond, D, Eymery, J, Faynot, O

“…Strained p-MOSFETs with recessed and embedded silicon-germanium (eSiGe) source/drain (S/D) are fabricated on either silicon-on-insulator (SOI) or strained SOI…”
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Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances by Ben Akkez, Imed, Fenouillet-Beranger, Claire, Cros, Antoine, Perreau, Pierre, Haendler, Sébatien, Weber, Olivier, Andrieu, François, Pellissier-Tanon, D., Abbate, F., Richard, C., Beneyton, R., Gouraud, P., Margain, A., Borowiak, C., Gourvest, E., Bourdelle, K.K., Nguyen, B.Y., Poiroux, T., Skotnicki, Thomas, Faynot, Olivier, Balestra, Francis, Ghibaudo, Gérard, Boeuf, Fréderic

“…► Comparison between two substrate orientation for FD-SOI devices. ► We studied the carrier mobility degradation as a function of temperature. ► Impurity such…”
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La brucellose bovine au Tchad by Perreau, Pierre

“…Aucun résumé disponible en français…”
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Lithium niobate film bulk acoustic wave resonator for sub-6 GHz filters by Bousquet, Marie, Perreau, Pierre, Maeder-Pachurka, Catherine, Joulie, Alice, Delaguillaumie, Fanny, Delprato, Julien, Enyedi, Gregory, Castellan, Gael, Eleouet, Clement, Farjot, Thierry, Billard, Christophe, Reinhardt, Alexandre

“…In this work, Film Bulk Acoustic Resonators (FBAR) based on 250 nm-thick Y+163°-cut LiNbO 3 films have been fabricated using a layer transfer process (4-inch)…”
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Single-mode high frequency LiNbO3 Film Bulk Acoustic Resonator by Bousquet, Marie, Enyedi, Gregory, Dechamp, Jerome, Zussy, Marc, Pokam Kuisseu, Pauline Sylvia, Mazen, Frederic, Billard, Christophe, Reinhardt, Alexandre, Bertucchi, Michael, Perreau, Pierre, Castellan, Gael, Maeder-Pachurka, Catherine, Mercier, Denis, Delprato, Julien, Borzi, Aurelio, Sejil, Selsabil

“…In this paper, Y+163°-cut LiNbO 3 (LNO) Film Bulk Acoustic Resonators (FBAR) with patterned bottom electrodes (AlSi or W) and a sacrificial layer cavity have…”
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Composite Tunable Bulk Acoustic Wave Resonator Based on Lithium Niobate Thin Films by Reinhardt, Alexandre, Soulat, Elisa, Perreau, Pierre, Enyedi, Gregory, Joulie, Alice, Boudou, Nicolas, Gorisse, Marie, Castellan, Gael, Audoit, Guillaume, Bousquet, Marie, Fischer, Paul

“…Changing the electrical boundary conditions applied to a piezoelectric film by means of an external tunable capacitor is one of the possible mechanisms to…”
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High Frequency LiNbO3 Bulk Wave Resonator by Gorisse, Marie, Bauder, Ruediger, Timme, Hans-Joerg, Friedrich, Hans-Peter, Dours, Lyvia, Perreau, Pierre, Ravix, Aurelie, Lefebvre, Romain, Castellan, Gail, Maeder-Pachurka, Catherine, Bousquet, Marie, Reinhardt, Alexandre

“…Bulk Acoustic Wave Resonators made of lithium niobate thin films obtained by layer transfer techniques relied so far only on full sheet buried electrodes, what…”
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ESD robustness of FDSOI gated diode for ESD network design: Thin or thick BOX? by Benoist, Thomas, Fenouillet-Beranger, Claire, Perreau, Pierre, Buj, Christel, Galy, Philippe, Marin-Cudraz, David, Faynot, Olivier, Cristoloveanu, Sorin, Gentil, Pierre

“…The robustness against Electrostatic Discharge (ESD) events of gated diodes, fabricated in CMOS 45nm FDSOI technology, is compared for 10nm and 145nm Buried…”
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Single Crystal LiNbO3 and LiTaO3 Bulk Acoustic Wave Resonator by Bousquet, Marie, Perreau, Pierre, Delprato, Julien, Sansa, Marc, Enyedi, Gregory, Soulat, Elisa, Lima, Gabriel, Dahmani, Hatem, Castellan, Gael, Eleouet, Clement, Guerrero, Jean, Lamy, Yann, Reinhardt, Alexandre

“…Since the last decade, new innovative acoustic devices based on single crystal LiNbO3 and LiTaO 3 thin films, i.e. layered surface, Lamb or bulk acoustic wave…”
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5 GHz Lamb wave Wi-Fi channel filters by Reinhardt, Alexandre, Bousquet, Marie, Joulie, Alice, Soulat, Elisa, Maeder-Pachurka, Catherine, Perreau, Pierre, Enyedi, Gregory, Castellan, Gael, Delprato, Julien, Reig, Bruno, Thomassin, Jean-Luc, Alavi, Hossein, Fischer, Paul

“…Lamb-wave resonators offer the possibility to adjust their resonance frequency by varying the period of their inter-digitated electrodes. Leveraging the high…”
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4.2 GHz LiNbO3 Film Bulk Acoustic Resonator by Bousquet, Marie, Perreau, Pierre, Joulie, Alice, Delaguillaumie, Fanny, Maeder-Pachurka, Catherine, Castellan, Gael, Envedi, Gregory, Delprato, Julien, Mazen, Frederic, Reinhardt, Alexandre, Huyet, Isabelle, Laroche, Thierry, Clairet, Alexandre, Ballandras, Sylvain

“…We have designed and fabricated LiNbO 3 Film Bulk Acoustic Resonators operating around 4.2 GHz, suitable for C-band filters, with various bandwidths (60, 170,…”
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Transparent PZT MIM Capacitors on Glass for Piezoelectric Transducer Applications by Le Rhun, Gwenael, Dieppedale, Christel, Wague, Baba, Querne, Corentin, Enyedi, Gregory, Perreau, Pierre, Montmeat, Pierre, Licitra, Christophe, Fanget, Stephane

“…This paper reports on the realization and characterization of a fully transparent Pb(Zr0.52,Ti0.48)O3 (PZT) based MIM capacitor on glass substrate for…”
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