Search Results - "Piel, J.P."

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  1. 1

    High quality transparent conductive electrodes in organic photovoltaic devices by Chakaroun, M., Lucas, B., Ratier, B., Defranoux, C., Piel, J.P., Aldissi, M.

    Published in Thin solid films (2009)
    “…The use of indium tin oxide (ITO) in conjunction with polymeric substrates requires deposition at low temperatures or room temperature, and with a limited or…”
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    Journal Article
  2. 2

    Physical surface adsorption and Molecular Surface Fractal Analysis (MFSA) detected with Spectroscopic Ellipsometry by Ferrieu, F., Piel, J.P., Stehlé, J.L.

    Published in Applied surface science (15-11-2009)
    “…It is known for years that surface adsorption/desorption can be studied by in situ Spectroscopic Ellipsometry (SE). The physical adsorption of water or other…”
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    Journal Article Conference Proceeding
  3. 3

    Generalized ellipsometry for the characterization of anisotropic materials: influence of the sample adjustment on the extracted optical indices by Boher, P., Piel, J.P., Sacépé, B.

    Published in Thin solid films (01-05-2004)
    “…A new method to extract accurately the optical properties of anisotropic materials and multilayer structures is presented. The main difference compared to the…”
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    Journal Article
  4. 4

    A new multiple wavelength ellipsometric imager: design, limitations and applications by Boher, P., Thomas, O., Piel, J.P., Stehle, J.L.

    Published in Thin solid films (01-05-2004)
    “…Spectroscopic ellipsometry is a very useful non-destructive technique to characterise the thickness and composition of multilayers with a spatial resolution of…”
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    Journal Article
  5. 5

    Characterization of different porous silicon structures by spectroscopic ellipsometry by Fried, M, Lohner, T, Polgár, O, Petrik, P, Vázsonyi, É, Bársony, I, Piel, J.P, Stehle, J.L

    Published in Thin solid films (15-04-1996)
    “…The results of multiparameter fitting of spectroscopic ellipsometric (SE) spectra on porous silicon layers (PSL) were connected with the processing parameters…”
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    Journal Article Conference Proceeding
  6. 6

    A new industrial tool combining VUV spectroscopic ellipsometry and grazing X-ray reflectance to characterize 157 nm structures by Boher, P., Evrard, P., Piel, J.P., Stehle, J.L.

    “…Multilayer structures for 157 nm lithography show thinner and thinner layer thickness and are more and more sensitivity to the interface and surface roughness…”
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    Conference Proceeding
  7. 7

    Phase shifting interferometer for the characterization of nanodevices by Boher, P., Piel, J.P., Stehle, J.L., Dubois, A., Boccara, A.C.

    “…A new phase shifting interferometry based on the integrating-bucket technique with sinusoidal phase modulation is presented. The phase modulation is achieved…”
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    Conference Proceeding
  8. 8

    Non-destructive thickness measurements of GaInAs, AlInAs, and InP multilayer structures by Pickering, C., Garawal, N.S., Lancefield, D., Piel, J.P., Blunt, R.T.

    “…Thickness measurements of various three and four layer structures on InP substrates using the non-destructive technique of spectroscopic ellipsometry are…”
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    Conference Proceeding