Search Results - "Picraux, S.T."

Charge Transport Characteristics in Boron-Doped Silicon Nanowires by Ingole, S., Manandhar, P., Chikkannanavar, S.B., Akhadov, E.A., Picraux, S.T.

“…We report the charge transport and inferred surface depletion characteristics of silicon nanowires (Si NWs) with diameters of 90-170 nm after boron doping to 8…”
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Epitaxial thin films of topological insulator Bi2Te3 with two-dimensional weak anti-localization effect grown by pulsed laser deposition by Zhang, S.X., Yan, L., Qi, J., Zhuo, M., Wang, Y.-Q., Prasankumar, R.P., Jia, Q.X., Picraux, S.T.

“…We have grown high quality epitaxial topological insulator Bi2Te3 thin films on silicon (111) substrates by pulsed laser deposition. Systematic structural…”
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Ultrafast Electron and Hole Dynamics in Germanium Nanowires by Prasankumar, R. P, Choi, S, Trugman, S. A, Picraux, S. T, Taylor, A. J

“…We present the first ultrafast time-resolved optical measurements, to the best of our knowledge, on ensembles of germanium nanowires. Vertically aligned…”
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Magnetic movement of biological fluid droplets by García, Antonio A., Egatz-Gómez, Ana, Lindsay, Solitaire A., Domínguez-García, P., Melle, Sonia, Marquez, Manuel, Rubio, Miguel A., Picraux, S.T., Yang, Dongqing, Aella, P., Hayes, Mark A., Gust, Devens, Loyprasert, Suchera, Vazquez-Alvarez, Terannie, Wang, Joseph

“…Magnetic fields can be used to control the movement of aqueous drops on non-patterned, silicon nanowire superhydrophobic surfaces. Drops of aqueous and…”
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Silicon nanowire and polyethylene superhydrophobic surfaces for discrete magnetic microfluidics by Egatz-Gómez, Ana, Schneider, John, Aella, P., Yang, Dongqing, Domínguez-García, P., Lindsay, Solitaire, Picraux, S.T., Rubio, Miguel A., Melle, Sonia, Marquez, Manuel, García, Antonio A.

“…A microfluidic method to manipulate small drops of water is studied on two different superhydrophobic surfaces. Using this digital magnetofluidic method, water…”
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Tailored Surface Modification by Ion Implantation and Laser Treatment by Picraux, S. T., Pope, L. E.

“…An important trend in materials science is the use of increasingly sophisticated methods to control composition and microstructure during processing…”
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Corrosion behavior of phosphorus-implanted Fe-6Cr and Fe-18Cr amorphous alloys by SORENSEN, N.R, DIEGLE, R.B, PICRAUX, S.T

“…The passivation of phosphorus-implanted Fe--6Cr and Fe--18Cr alloys has been investigated in 0.1N H sub 2 SO sub 4 with and without the addition of chloride…”
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Ion beam analysis of VLS grown Ge nanostructures on Si by Taraci, J.L., Clement, T., Dailey, J.W., Drucker, J., Picraux, S.T.

“…A rich variety of nanostructures can be synthesized by varying pressure and temperature during vapor–liquid–solid (VLS) epitaxy on Si. The chemical vapor…”
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Metastable SiGeC formation by solid phase epitaxy by STRANE, J. W, STEIN, H. J, LEE, S. R, DOYLE, B. L, PICRAUX, S. T, MAYER, J. W

“…We report the synthesis and detailed structural characterization of SiGeC metastable alloys formed by solid phase epitaxial regrowth. Epitaxial layers with 0.7…”
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Epitaxial growth of rare-earth silicides on (111)Si by KNAPP, J. A, PICRAUX, S. T

“…Rapid heating with an electron beam has been used to react overlayers of rare-earth (RE) metals with (111) Si, forming epitaxial layers of silicides of Y, Gd,…”
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Layer-by-layer sputtering and epitaxy of Si(100) by BEDROSSIAN, P, HOUSTON, J. E, TSAO, J. Y, CHASON, E, PICRAUX, S. T

“…We report oscillations in diffracted electron intensities during ion bombardment of Si(100) by 200- and 250-eV Xe, both alone and with sequential and…”
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The role of transient ion-induced defects in ion beam-assisted growth by Kellerman, B. K., Chason, E., Floro, J. A., Picraux, S. T., White, J. M.

“…Low-energy ion bombardment, concurrent with growth, can control and improve many aspects of film growth, but confirming the atomistic mechanism responsible for…”
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Ion beam enhanced epitaxial growth of Ge (001) by CHASON, E, BEDROSSIAN, P, HORN, K. M, TSAO, J. Y, PICRAUX, S. T

“…An enhancement in surface smoothness during molecular beam epitaxial growth of Ge on Ge (001) by 200 eV Xe ion bombardment has been measured with reflection…”
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The effects of P implantation on passivity of Fe–Cr alloys in acidic electrolytes by Sorensen, N.R., Diegle, R.B., Picraux, S.T.

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Surface roughening of Ge(001) during 200 eV Xe ion bombardment and Ge molecular beam epitaxy by Chason, E., Tsao, J.Y., Horn, K.M., Picraux, S.T., Atwater, H.A.

“…The kinetics of surface roughening of Ge(001) during 200 eV Xe ion bombardment and during Ge molecular beam epitaxy (MBE) are studied by real-time reflection…”
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Defect production and recombination during low‐energy ion processing by Kellerman, B. K., Floro, J. A., Chason, E., Brice, D. K., Picraux, S. T., White, J. M.

“…Low‐energy ion processing produces damaged, microroughened semiconductor surfaces due to the production of point defects. We present a study of point defect…”
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Displacement-threshold energies in Si calculated by molecular dynamics by Miller, LA, Brice, DK, Prinja, AK, Picraux, ST

“…Molecular-dynamics calculations of simple defect production in bulk Si are reported. The Tersoff three-body potential-energy function is used to provide a…”
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Simulations of layer-by-layer sputtering during epitaxy by CHASON, E, BEDROSSIAN, P, HOUSTON, J. E, TSAO, J. Y, DODSON, B. W, PICRAUX, S. T

“…We have performed computer simulations of simultaneous and sequential ion bombardment and epitaxial growth. In agreement with recent reflection high-energy…”
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Ultrafast carrier dynamics in semiconductor nanowires by Prasankumar, R.P., Choi, S.G., Wang, G.T., Picraux, S.T., Taylor, A.J.

“…Ultrafast wavelength-tunable optical measurements on semiconductor nanowires allow us to independently probe the dynamics of electrons, holes, and defect…”
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Direct measurement of evaporation during rapid thermal processing of capped GaAs by HAYNES, T. E, CHU, W. K, PICRAUX, S. T

“…We have directly measured the amounts of arsenic evaporated through very thin encapsulating films during rapid thermal processing (RTP). The evaporated…”
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