Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief narration of ultrawide bandgap (UWBG) PSDs and, s...

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Bibliographic Details
Published in:	IEEE journal of emerging and selected topics in power electronics Vol. 11; no. 4; pp. 3957 - 3982
Main Authors:	Mazumder, Sudip K., Voss, Lars F., Dowling, Karen M., Conway, Adam, Hall, David, Kaplar, Robert J., Pickrell, Gregory W., Flicker, Jack, Binder, Andrew T., Chowdhury, Srabanti, Veliadis, Victor, Luo, Fang, Khalil, Sameh, Aichinger, Thomas, Bahl, Sandeep R., Meneghini, Matteo, Charles, Alain B.
Format:	Journal Article
Language:	English
Published:	Piscataway The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01-08-2023
Subjects:	Distributed generation Energy gap Energy sources Gallium nitrides Power semiconductor devices Silicon carbide
Online Access:	Get full text
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Summary:	This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief narration of ultrawide bandgap (UWBG) PSDs and, subsequently, an overview of optically activated PSDs encompassing photoconductive semiconductor switch (PCSS) and optical bipolar PSDs are provided. Finally, an overview of PSD packaging and reliability is captured.
ISSN:	2168-6777 2168-6785
DOI:	10.1109/JESTPE.2023.3277828