Search Results - "Pickel, J.C."

Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future by Reed, R.A., Kinnison, J., Pickel, J.C., Buchner, S., Marshall, P.W., Kniffin, S., LaBel, K.A.

“…Over the past 27 years, or so, increased concern over single-event effects (SEEs) in spacecraft systems has resulted in research, development, and engineering…”
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Radiation effects on photonic imagers-a historical perspective by Pickel, J.C., Kalma, A.H., Hopkinson, G.R., Marshall, C.J.

“…Photonic imagers are being increasingly used in space systems, where they are exposed to the space radiation environment. Unique properties of these devices…”
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Rate prediction for single event effects-a critique by Petersen, E.L., Pickel, J.C., Adams, J.H., Smith, E.C.

“…The authors review various single event effects (SEE) testing and rate prediction methodologies and recommend standard approaches. This discussion is limited…”
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Transient radiation effects in ultra-low noise HgCdTe IR detector arrays for space-based astronomy by Pickel, J.C., Reed, R.A., Ladbury, R., Marshall, P.W., Jordan, T.M., Gee, G., Fodness, B., McKelvey, M., McMurray, R., Kim Ennico, McCreight, C., Waczynski, A., Polidan, E.J., Johnson, S.D., Weller, R.A., Mendenhall, M.H., Schrimpf, R.D.

“…We present measurements of proton-induced single event transients in ultra-low noise HgCdTe IR detector arrays being developed for space-based astronomy and…”
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Radiation-induced charge collection in infrared detector arrays by Pickel, J.C., Reed, R.A., Ladbury, R., Rauscher, B., Marshall, P.W., Jordan, T.M., Fodness, B., Gee, G.

“…A modeling approach is described for predicting charge collection in space-based infrared detector arrays due to ionizing particle radiation. The modeling uses…”
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Impact of substrate thickness on single-event effects in integrated circuits by Dodd, P.E., Shaneyfelt, M.R., Fuller, E., Pickel, J.C., Sexton, F.W., Winokur, P.S.

“…The effects of substrate and epitaxial-layer thickness on the single-event upset and single-event latchup response of integrated circuits are studied using…”
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Proton-induced transients and charge collection measurements in a LWIR HgCdTe focal plane array by Marshall, P.W., Hubbs, J.E., Arrington, D.C., Marshall, C.J., Reed, R.A., Gee, G., Pickel, J.C., Ramos, R.A.

“…We compare measurements and modeling of 27 and 63 MeV proton-induced transients in a large-format HgCdTe long wavelength infrared (LWIR) focal plane assembly…”
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A single event latchup suppression technique for COTS CMOS ICs by Spratt, J.P., Pickel, J.C., Leadon, R.E., Lacoe, R.C., Moss, S.C., LaLumondiere, S.D.

“…Results are presented on technique using displacement damage from energetic ions to suppress single event latchup in commercial off-the-shelf (COTS) CMOS…”
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Modeling high-energy heavy-ion damage in silicon by Spratt, J.P., Burke, E.A., Pickel, J.C., Leadon, R.E.

“…We identify a discrepancy between experimental data and model predictions by a widely used radiation transport code, SRIM. We describe a method for determining…”
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Geometrical factors in SEE rate calculations by Petersen, E.L., Pickel, J.C., Smith, E.C., Rudeck, P.J., Letaw, J.R.

“…Examines a number of possible geometrical effects that may show up in either upset measurements or upset calculations. The geometrical effets are with respect…”
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Proton-induced secondary particle environment for infrared sensor applications by Pickel, J.C., Reed, R.A., Marshall, P.W., Jordan, T.M., Gee, G., Fodness, B., McKelvey, M., McMurray, R.E., Ennico, K.A., Johnson, R.R., McCreight, C.

“…We present measurements of the proton-induced secondary particle environment in the vicinity of an infrared focal plane array. Measurements were made of the…”
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Characteristics of the Hubble Space Telescope's radiation environment inferred from charge-collection modeling of Near-Infrared Camera and Multi-Object Spectrometer dark frames by Ladbury, R., Pickel, J.C., Gee, G., Jordan, T.M., Bergeron, L., Rauscher, B., Reed, R.A., Marshall, P.W., Figer, D., Fodness, B., Kniffin, S.

“…Dark frames from orbiting infrared detector arrays are analyzed using a charge-collection model to investigate the effects of secondary and primary particle…”
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Single-event effects rate prediction by Pickel, J.C.

“…Common practices for predicting rates of single-event effects (SEE) in microelectronics in space environments are reviewed. Established rate-prediction models…”
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Correction to "Single-Event Effects Rate Prediction" [Correspondence] by Pickel, J.C.

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Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits by Reed, R.A., Marshall, P.W., Pickel, J.C., Carts, M.A., Fodness, B., Niu, G., Fritz, K., Vizkelethy, G., Dodd, P.E., Irwin, T., Cressler, J.D., Krithivasan, R., Riggs, P., Prairie, J., Randall, B., Gilbert, B., LaBel, K.A.

“…Combining broad-beam circuit level single-event upset (SEU) response with heavy ion microprobe charge collection measurements on single silicon-germanium…”
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Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-[micro]m SiGe heterojunction bipolar transistors and circuits by Reed, R.A, Marshall, P.W, Pickel, J.C, Carts, M.A, Fodness, B, Niu, G, Fritz, K, Vizkelethy, G, Dodd, P.E, Irwin, T, Cressler, J.D, Krithivasan, R, Riggs, P, Prairie, J, Randall, B, Gilbert, B, LaBel, K.A

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Single event damage effects in cryogenic CMOS microelectronics by Pickel, J.C.

“…Cryogenic microelectronics, as used in focal plane arrays in space-based optical sensors, are potentially vulnerable to single event damage effects from…”
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Single event damage effects in cryogenic CMOS microelectronics by Pickel, J.C.

“…Cryogenic microelectronics, as used in focal plane arrays in space-based optical sensors, are potentially vulnerable to single event damage effects from…”
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Modeling radiation-induced transients in the Next Generation Space Telescope (NGST) by Pickel, J.C., Reed, R., Ladbury, R., Rauscher, B., Marshall, P., Jordan, T.

“…The Next Generation Space Telescope (NGST) mission has extremely low noise requirements, of the order of a few electrons, combined with very long integration…”
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Total dose response of transconductance in MOSFETs at low temperature by Pease, R.L., Clark, S.D., Cole, P.L., Krieg, J.F., Pickel, J.C.

“…n and p channel MOSFETs from four bulk CMOS technologies and two CMOS/SIMOX technologies were characterized for total dose response up to 1 Mrad(SiO/sub 2/) at…”
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