Search Results - "Piccone, D.E."

Power converters for railguns by Pappas, J.A., Piccone, D.E.

“…The University of Texas at Austin Center for Electromechanics (UT-CEM) has been developing power converters for use with DC railguns. Special design rules have…”
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Power semiconductors empirical diagrams expressing life as a function of temperature excursion by Somos, I.L., Piccone, D.E., Willinger, L.J., Tobin, W.H.

“…Life expectancy for power semiconductor devices under cyclical power is discussed in practical terms as it has evolved over several decades. Predictions of…”
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Plasma spread in high-power thyristors under dynamic and static conditions by Somos, I., Piccone, D.E.

“…The plasma spread properties of various thyristors were studied utilizing an infrared viewing technique. The plasma velocity occurring prior to equilibrium,…”
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Behavior of thyristors under transient conditions by Somos, I., Piccone, D.E.

“…The capability of gate-triggered thyristors to withstand steep wavefront, high-current pulses (i.e., di/dt capability) is a function of both junction…”
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Power semiconductors-a new method for predicting the on-state characteristic and temperature rise during multicycle fault currents by Somos, I.L., Piccone, D.E., Willinger, L.J., Tobin, W.H.

“…Solid-state switches are being designed for use on AC transmission lines for tighter control of power flow and increased use of transmission capacity in…”
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The MTO thyristor-a new high power bipolar MOS thyristor by Piccone, D.E., De Doncker, R.W., Barrow, J.A., Tobin, W.H.

“…A new high power bipolar MOS thyristor, the MTO/sup TM/ thyristor, is a latching device which extends the limited capabilities of the MCT and IGBT to higher…”
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Operation of power semiconductors at their thermal limit by Rodrigues, R.G., Piccone, D.E., Tobin, W.H., Willinger, L.W., Barrow, J.A., Hansen, T.A., Zhao, J., Cao, L.

“…Based on experience gained with Si power devices, a review is presented of some of the thermal limitations to the operation of power semiconductor devices,…”
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Design and testing of high power, repetitively pulsed, solid-state closing switches by Boenig, H.J., Schwartzenberg, J.W., Willinger, L.J., Piccone, D.E., Lopez, D.A., Smolleck, H.A.

“…Pulsed power physics experiments often require high-power, repetitively pulsed closing switches. Traditionally, ignitrons have been used in these applications…”
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Power semiconductor devices-examination of subcycle surge current ratings as needed for fuse selection by Eriksson, L.O., Piccone, D.E., Willinger, L.J., Tobin, W.H.

“…It is well recognized that subcycle Irms/sup 2/t ratings for high power semiconductor devices and current limiting fuses are not equivalent because the former…”
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A thermal analogue of higher accuracy and factory test method for predicting and supporting thyristor fault suppression ratings by Piccone, D.E., Eriksson, L.O., Urbanek, J., Tobin, W.H., Somos, I.L.

“…Because sophisticated computer modeling is not easily accessible, a one-dimensional thermal analogue is often used for routine calculations of virtual junction…”
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Power semiconductors-a new method for predicting the on-state characteristic and temperature rise during multi-cycle fault currents by Somos, I.L., Piccone, D.E., Willinger, L.J., Tobin, W.H.

“…A concept, test procedure, and evaluation method are described for determining the on-state voltage of thyristors (or diodes) over a very wide temperature…”
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Two-dimensional heat flow in a GTO having a highly interdigitated emitter by Somos, I.L., Piccone, D.E., Tobin, W.H.

“…Thermal analogs of thyristors having the form of transmission lines are used routinely for calculating thermal phenomena, but they cannot be used for a…”
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A field terminated diode by Houston, D.E., Krishna, S., Piccone, D.E., Finke, R.J., Sun, Y.S.

“…The field terminated diode (FTD) is a new medium power switching element which meets the important criteria of a switching thyristor: fast switching and low…”
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Selecting fuses for power semiconductor devices by Eriksson, L.O., Piccone, D.E., Willinger, L.J., Tobin, W.H.

“…State-of-the-art thyristors at the high power end utilizing 77 mm-100 mm diameter silicon and associated fuses should require more precise coordination,…”
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