Search Results - "Phetchakul, T."

Magnetotransistor Based on the Carrier Recombination-Deflection Effect by Leepattarapongpan, C., Phetchakul, T., Penpondee, N., Pengpad, P., Chaowicharat, E., Hruanun, C., Poyai, A.

“…This paper presents the three-terminal magnetotransistor based on the carrier recombination-deflection effect. Three-terminal magnetotransistor can detect…”
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UV photodetector from Schottky diode diamond film by Thaiyotin, L., Ratanaudompisut, E., Phetchakul, T., Cheirsirikul, S., Supadech, S.

“…Diamond film was synthesized on a silicon substrate by hot-filament CVD and used to fabricate a Schottky photodiode for the detection of UV light. This paper…”
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The low power 3D-magnetotransistor based on CMOS technology by Leepattarapongpan, C., Phetchakul, T., Penpondee, N., Pengpad, P., Srihapat, A., Chaowicharat, E., Hruanun, C., Poyai, A.

“…This article presents a 3D magnetotransistor for detecting magnetic field in three dimensions (B X , B Y , and B Z ) by relying on the difference between base…”
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Merged three-terminal magnetotransistor based on the carrier recombination - deflection effect by Leepattarapongpan, C., Penpondee, N., Phetchakul, T., Phengan, W., Chaowicharat, E., Hruanun, C., Poyai, A.

“…This article presents a merged three terminals magnetotransistor based on the carrier recombination - deflection effect. This particular magnetotransistor…”
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Yield analysis by poisson yield model based on the defect analysis with derivative method by Praepattharapisut, W., Pengchan, W., Phetchakul, T., Poyai, A.

“…This paper presented the corresponding between the classical Poisson's yield equation prediction and wafer actual yield on the silicon wafer with 0.8 μm CMOS…”
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Contributing parameters for magnetoresistance effect of the new design on Hall plate structure by Phetchakul, T., Taisettavatkul, P., Yamwong, W., Poyai, A.

“…This paper presents the parameters which contribute magnetoresistance effect of the new design on Hall plate structure when it is compared with series…”
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The new design for magnetoresistance effect on Hall plate structure by Phetchakul, T., Taisettavatkul, P., Pengchan, W., Yamwong, W., Poyai, A.

“…This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD…”
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The mechanism of dual schottky magnetodiode by Phetchakul, T., Luanatikomkul, W., Yamwong, W., Poyai, A.

“…This paper presents the mechanism of dual schottky magnetodiode. The device can operate both in forward and reverse biasing for magnetic field sensor. Two…”
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The study of forward and reverse schottky junction for dual magnetodiode by Phetchakul, T., Luanatikomkul, W., Yamwong, W., Poyai, A.

“…This paper presents schottky diode for sensing magnetic field. The structure is the same as dual magnetodiode that had been reported by the same group. The…”
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Dual magnetodiode by Phetchakul, T., Junkamkaw, S.

“…This paper presents magnetodiode which the structure consists of two pn junction diodes. The anodes are common together and the cathodes are symmetrical…”
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Investigation on temperature effect on alcohol sensing of multi-walled carbon nanotube by Phetchakul, T., Sangnual, A., Sutthinet, C.

“…This research studied the environment temperature affect to alcohol detecting and heated carbon nanotube film after alcohol detecting for a good chemical…”
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Study on temperature effect on p-n and zener junction for PTAT temperature sensor by Songmalai, P., Phetchakul, T., Pengchan, W., Ratanaudomphisut, E., Supadech, J.

“…Research on a new compact BJT PTAT temperature sensor structure has been reported. The zener junction-connected BJT transistor and Base-Emitter voltage of…”
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The defects analysis in CMOS fabrication by arrhenius activation energy technique by Pengchan, W., Phetchakul, T., Poyai, A.

“…Low power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n…”
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Implantation-induced defects analysis base on activation energy diagnostics by Pengchan, W., Phetchakul, T., Poyai, A.

“…Low power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n…”
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Photoconductor Diamond Film Detector by Jesen, S., Thaiyotin, L., Cheirsirikul, S., Phetchakul, T.

“…Diamond film was synthesized on a silicon substrate by MPCVD (microwave plasma chemical vapor deposition) process and used to fabricate a photoconductor for…”
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Alcohol sensor based on multi-wall carbon nanotube by Sutthinet, C., Sangnual, A., Phetchakul, T.

“…We have demonstrated multi-walled carbon nanotube (MWCNTs) based sensors, which are capable of detecting alcohol vapor. The properties of the sensor were as a…”
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The deflection length and emitter width on sensitivity of magnetotransistor by Phetchakul, T., Sottip, P., Leepattarapongpan, C., Penpondee, N., Pengpad, P., Srihapat, A., Hruanun, C., Poyai, A.

“…This paper presents a study of effect of deflection length and emitter width on sensitivity of magnetotransistor. The device has been fabrication on standard…”
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Backward diode characteristics of p-type diamond/n-type silicon heterojunction diodes by PHETCHAKUL, T, KIMURA, H, AKIBA, Y, KUROSU, T, IIDA, M

“…Rectification characteristics obtained for p-type diamond/n-type silicon heterojunctions have been studied. The current–voltage ( I – V ) characteristics of…”
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Effect of Base Width and Implantation Dose on Performance of 3-Terminal Magnetotransistor by Woradet, J., Phetchakul, T., Chareankid, S., Pengchan, W., Klunngien, N., Hruanun, C., Poyai, A.

“…This paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (FL) from…”
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Selective Growth of CNT on Ni/Cu Substrate by Phetchakul, T., Chomnawang, N., Cheirsirikul, S., Nakachai, N., Ratanaudomphisut, E., Songsiriritthigul, P.

“…This paper presents a method for selective growth of CNT films. Specific areas for CNT growing were defined by patterning Ni electrodes on a Cu substrate using…”
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