Search Results - "Phaneuf, R.J."

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    Equilibration of ring-cluster surface phases and silicide islands for Co adsorbed on Si(111) by Phaneuf, R.J., Bennett, P.A., Marsi, M., Günther, S., Gregoratti, L., Casalis, L., Kiskinova, M.

    Published in Surface science (01-07-1999)
    “…We have used scanning photoemission microscopy (SPEM) and low energy electron microscopy (LEEM) to investigate the equilibration of the submonolayer surface…”
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  3. 3

    Diffusion of a Ga adatom on the GaAs(001)‐c(4×4)‐heterodimer surface: A first principles study by Roehl, J.L., Aravelli, S., Khare, S.V., Phaneuf, R.J.

    Published in Surface science (01-08-2012)
    “…The adsorption and diffusion behavior of a Ga adatom on the GaAs (001)‐c(4×4)-heterodimer surface were studied by employing ab initio density functional theory…”
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  4. 4

    Evidence for a large, thermal-activated characteristic length scale in unstable homoepitaxial growth on GaAs(001) by Lin, Chuan-Fu, Kan, Hung-Chih, Kanakaraju, S., Richardson, C.J., Phaneuf, R.J

    Published in Journal of crystal growth (15-10-2013)
    “…We report on observations of unstable growth on GaAs(001) surfaces nanopatterned with grooves of varying length/width aspect ratios. For homoepitaxial growth…”
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  5. 5

    Anomalous scaling in epitaxial growth on vicinal surfaces: meandering and mounding instabilities in a linear growth equation with spatiotemporally correlated noise by Hamouda, Ajmi BH, Pimpinelli, A., Phaneuf, R.J.

    Published in Surface science (01-09-2008)
    “…We have undertaken an extensive analytical and kinetic Monte Carlo study of the (2+1) dimensional discrete growth model on a vicinal surface. A non-local,…”
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  6. 6

    PEEM imaging of dopant contrast in Si(001) by Ballarotto, V.W., Siegrist, K., Phaneuf, R.J., Williams, E.D., Mogren, S.

    Published in Surface science (01-08-2000)
    “…We report on a quantitative investigation of doping-induced contrast in photoelectron emission microscopy images of Si devices. The calibration samples were…”
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  7. 7

    Variation of threshold field in field induced fabrication of Au nanodots on ultrathin in situ grown silicon oxide by Park, J.Y., Phaneuf, R.J., Williams, E.D.

    Published in Surface science (20-12-2000)
    “…We report on the variation of threshold field with oxide thickness for field evaporation of Au nanodots onto ultrathin oxide layers on Si(1 0 0). Au dots of…”
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  8. 8

    Observations of reversible and irreversible structural transitions of cobalt on Si (1 1 1) with LEEM by Phaneuf, R.J., Hong, Y., Horch, S., Bennett, P.A.

    Published in Micron (Oxford, England : 1993) (01-02-1999)
    “…We present real time images of the evolution of the structure of the Si (1 1 1) surface during the deposition of cobalt at elevated temperatures, acquired…”
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  9. 9

    A quick estimation of the LEED pattern size formed by an electrostatic objective lens in LEEM by Kan, Hung-Chih, Phaneuf, R.J.

    Published in Optik (Stuttgart) (2001)
    “…A formula for a quick estimation of the size of the low energy electron diffraction (LEED) pattern formed by an electrostatic objective lens of a low energy…”
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