Search Results - "Pham, Tung N"

Single electron transfer in metal halogen exchange. The reaction of organolithium compounds with alkyl halides by Ashby, E. C, Pham, Tung N

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The use of 5-halocyclooctenes as a radical probe. Reactions with lithium aluminum hydride by Ashby, E. C, Pham, Tung N

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Evidence for electron transfer in the reaction of (trimethylstannyl)sodium with primary alkyl halides by Ashby, Eugene C, Su, Wei Yang, Pham, Tung N

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Evidence for single electron transfer in the reduction of organic halides by lithium triethylborohydride by Ashby, E. C, Wenderoth, Bernd, Pham, Tung N, Park, Won Suh

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Functional Test and Speed/Power Sorting of the IBM POWER6 and Z10 Processors by Pham, T.N., Clougherty, F., Salem, G., Crafts, J.M., Tetzloff, J., Moczygemba, P., Skergan, T.M.

“…The 5 GHz IBM POWER6 processor (P6) and newest Z10 4.4 GHz processor utilized a custom combination of structural and functional testing delivering improved…”
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Design of Radix-4 SRT Dividers in 65 Nanometer CMOS Technology by Pham, T.N., Swartzlander, E.E.

“…As technology evolves, there is a never ending need to explore design tradeoffs and alternatives. In the CMOS technologies of the recent past where minimizing…”
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Design of Radix 4 SRT Dividers for Single Precision DSP in Deep Submicron CMOS Technology by Pham, T.N., Swartzlander, E.E.

“…This paper presents a proposal for design of radix 4 SRT dividers for single precision DSP in deep submicron CMOS technology. Radix 4 dividers with minimal…”
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IIIA-1 Ultralow-noise and high-frequency operation of TEGFET's made by molecular-beam epitaxy by Laviron, M., Delagebeaudeuf, D., Rochette, J.F., Tung, P.N., Delescluse, P., Chevrier, J., Linh, N.T.

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The mental health problems of the Vietnamese in Calgary: major aspects and implications for service by Tung, N P

“…Since 1975 Indo-Chinese refugees have come to Canada in many waves. They left wartorn motherlands where the society was predominantly agricultural and the…”
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High speed-low power GaAs/AlGaAs TEGFET integrated circuit by Linh, N.T., Tung, P.N., Delabeaudeuf, D., Delescluse, P., Laviron, M.

“…Two-dimensional electron gas FETs (TEGFETs) have been used to fabricate DCFL circuits. The MBE wafers are processed as-grown without any recessed gate etching…”
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