Search Results - "Pham, Binh L."

A 1.5-45-GHz High-Power 2-D Distributed Voltage-Controlled Attenuator by Nguyen, Duy P., Pham, Binh L., Anh-Vu Pham

“…We present the development of an ultra-wideband and 1-W voltage-controlled attenuator (VCA) using a 0.15-μm enhancement mode gallium arsenide pseudomorphic…”
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A Compact Ka-Band Integrated Doherty Amplifier With Reconfigurable Input Network by Nguyen, Duy P., Pham, Binh L., Pham, Anh-Vu

“…In this paper, we present the design of an ultracompact monolithic millimeter-wave integrated circuit Doherty power amplifier (DPA) using a novel…”
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Triple bands antenna and high efficiency rectifier design for RF energy harvesting at 900, 1900 and 2400 MHz by Pham, Binh L., Pham, Anh-Vu

“…We present the design and development of a novel antenna that effectively radiates at three frequency bands to harvest RF energy from cellular network…”
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A 22-30 GHz Single-Ended-To-Differential LNA Using Double Defected Ground Marchand Balun by Do, Tan, Pham, Binh L., Nguyen, Trung-Kien

“…In this paper, a 2-stage Ka-band single-ended-to differential LNA design is presented. Common source configuration with inductive degeneration is used for…”
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High dynamic range X-band MMIC VGLNA for transmit/receive module by Pham, Binh L., Nguyen, Duy P., Anh-Vu Pham, Le, Phong D.

“…In this paper, a monolithic variable gain low noise amplifier (VGLNA) for transmit/receive module is presented. The voltage controlled attenuator (VCA) in the…”
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A compact 29% PAE at 6 dB power back-off E-mode GaAs pHEMT MMIC Doherty power amplifier at Ka-band by Nguyen, Duy P., Pham, Binh L., Anh-Vu Pham

“…In this paper, we present a compact Doherty power amplifier (DPA) in a 0.15-μm enhancement mode (E-mode) Gallium Arsenide (GaAs) pseudomorphic high electron…”
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A High Efficiency High Power Density Harmonic-Tuned Ka Band Stacked-FET GaAs Power Amplifier by Nguyen, Duy P., Thanh Pham, Pham, Binh L., Anh-Vu Pham

“…A stacked-FET power amplifier (PA) with harmonic- tuned output matching network is demonstrated using a 0.15-μm Gallium Arsenide (GaAs) technology. The…”
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High Power Monolithic pHemt GaAs Limiter for T/R Module by Pham, Binh L., Nguyen, Duy P., Anh-Vu Pham, Le, Phong D.

“…In this paper, a high power monolithic GaAs limiter for transmit/receive module is presented. While keeping the output power below 100 mW (20 dBm), this…”
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A 14-31 GHz 1.25 dB NF enhancement mode GaAs pHEMT low noise amplifier by Nguyen, Duy P., Pham, Binh L., Thanh Pham, Anh-Vu Pham

“…In this paper, we report a wide bandwidth low noise amplifier (LNA) fabricated in a 0.15 μm enhancement mode (Emode) gallium arsenide (GaAs) pseudomorphic high…”
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Compact Wide Bandwidth Balun Based on Modified Asymmetric Broadside Coupled Lines by Ta, Hai Hoang, Pham, Binh Le, Pham, Anh-Vu

“…We present the design and fabrication of a compact, wide bandwidth balun on a multilayer organic substrate. The balun is designed using asymmetrical broadside…”
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