Search Results - "Pezzimenti, Fortunato"

Modeling of the Steady State and Switching Characteristics of a Normally Off 4H-SiC Trench Bipolar-Mode FET by Pezzimenti, F.

“…The electrical characteristics of a normally off 4H-silicon carbide (SiC) bipolar-mode FET are investigated by means of a careful design activity and an…”
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High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes by Rao, Sandro, Pangallo, Giovanni, Pezzimenti, Fortunato, Della Corte, Francesco G.

“…A high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is presented. The linear dependence on temperature of the difference between the…”
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Analysis of Trapping Effects on the Forward Current-Voltage Characteristics of Al-Implanted 4H-SiC p-i-n Diodes by Megherbi, M. Larbi, Pezzimenti, Fortunato, Dehimi, Lakhdar, Saadoune, M. Achour, Della Corte, Francesco G.

“…The forward current-voltage characteristics (I F -V F ) of aluminum (Al)-implanted 4H-SiC p-i-n diodes are investigated by means of a numerical simulation…”
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Numerical Simulation Study of a Low Breakdown Voltage 4H-SiC MOSFET for Photovoltaic Module-Level Applications by Della Corte, Francesco G., De Martino, Giuseppe, Pezzimenti, Fortunato, Adinolfi, Giovanna, Graditi, Giorgio

“…Silicon carbide (SiC) power MOSFETs are available only for high-power and medium-to-high-voltage applications, generally above 600 V, because for lower…”
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Performance Evaluation of Silicon and GaN Switches for a Small Wireless Power Transfer System by Iero, Demetrio, Carotenuto, Riccardo, Merenda, Massimo, Pezzimenti, Fortunato, Della Corte, Francesco Giuseppe

“…In the last few years, the wide diffusion of rechargeable devices has fueled the research interest in wireless power transfer (WPT) technology that offers…”
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Ranging with Frequency Dependent Ultrasound Air Attenuation by Carotenuto, Riccardo, Pezzimenti, Fortunato, Della Corte, Francesco G., Iero, Demetrio, Merenda, Massimo

“…Measuring the distance between two points has multiple uses. Position can be geometrically calculated from multiple measurements of the distance between…”
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Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode by Bouzid, Fayçal, Pezzimenti, Fortunato, Dehimi, Lakhdar, Megherbi, Mohamed L., Della Corte, Francesco G.

“…In this paper, using a numerical simulator, we investigated the current-voltage characteristics of a Pt/n-GaN thin Schottky diode on the basis of the…”
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Simulation and analysis of the current-voltage-temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes by Zeghdar, Kamal, Dehimi, Lakhdar, Pezzimenti, Fortunato, Rao, Sandro, Della Corte, Francesco G.

“…The current-voltage characteristics of Al/Ti/4H-SiC Schottky barrier diodes have been investigated in the 85-445 K temperature range by means of a combined…”
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An Analytical Model of the Forward I- V Characteristics of 4H-SiC p-i-n Diodes Valid for a Wide Range of Temperature and Current by Bellone, S., Della Corte, F. G., Albanese, L. F., Pezzimenti, F.

“…The forward I-V characteristics of 4H-SiC p-i-n diodes are studied in a wide range of currents and temperatures by means of an analytical model that allows us…”
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Considerations on External Heat Transfer in Saturated Bipolar Junction Transistors by Carotenuto, Riccardo, Iero, Demetrio, Pezzimenti, Fortunato, Della Corte, Francesco G., Merenda, Massimo

“…When the BJT is deeply saturated and a resistor (R) is connected between the base and collector, the overall bipole seen through the base and emitter exhibits…”
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Simulation Study of Carbon Vacancy Trapping Effect on Low Power 4H-SiC MOSFET Performance by Bencherif, Hichem, Dehimi, Lakhdar, Athamena, Nour eddine, Pezzimenti, Fortunato, Megherbi, Mohamed Larbi, Della Corte, Francesco Giuseppe

“…The carbon vacancy in 4H-SiC is an important recombination center of the minority carrier and a direct consequence of SiC-based device degradation. In 4H-SiC,…”
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Power LED junction temperature readout circuit based on an off-the-shelf LED driver by Iero, Demetrio, Merenda, Massimo, Polimeni, Sonia, Carotenuto, Riccardo, Pezzimenti, Fortunato, Rao, Sandro, Della Corte, Francesco G.

“…A circuit is presented for the on-line measurement of the junction temperature (T J ) of power LEDs. The circuit is integrated with, and makes use of, an…”
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Static and transient analysis of a 4H-SiC trench Bipolar Mode FET with normally-off characteristics by Pezzimenti, F., Della Corte, Francesco G.

“…Steady-state and switching characteristics of a normally-off 4H-SiC Bipolar Mode FET (BMFET) are investigated in a wide range of temperatures by means of an…”
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Analytical model for the light trapping effect on ZnO:Al/c-Si/SiGe/c-Si solar cells with an optimized design by Bencherif, Hichem, Dehimi, Lakhdar, Pezzimenti, Fortunato, Yousfi, Abderrahim

“…This paper deals with the analytical investigation of light trapping effects on the performance of silicon-germanium (SiGe)-based solar cells in order to…”
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Ultrasonic Ranging using Frequency Selective Attenuation by Carotenuto, Riccardo, Iero, Demetrio, Pezzimenti, Fortunato, Della Corte, Francesco G., Merenda, Massimo

“…Positioning can be calculated from measurement of the distances between multiple reference points and moving sensors. A new technique to measure the distance…”
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Analysis of Al2O3 high-k gate dielectric effect on the electrical characteristics of a 4H-SiC low-power MOSFET by Bencherif, Hichem, Yousfi, Abderrahim, Dehimi, Lakhdar, Pezzimenti, Fortunato, Corte, Francesco G. Della

“…The work investigates the ability of a high-k gate dielectric material (Al 2 O 3 ) in improving the electrical performance of a low voltage 4H-SiC-based…”
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Possible efficiency boosting of tandem solar cell by using single antireflection coating and BSF layer by Yousfi, Abderrahim, Bencherif, Hichem, Dehimi, Lakhdar, Pezzimenti, Fortunato, Saidi, Lamir, Abdi, Mohamed Amir, Meddour, Faycal, Khezzar, Djamel

“…In this work we examine via an analytical model both the antireflection coating and the back surface field ability in boosting the electrical and optical…”
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Impact of a non-uniform p-base doping concentration on the electrical characteristics of a low power MOSFET in 4H-SiC by Bencherif, Hichem, Dehimi, Lakhdar, Pezzimenti, Fortunato, Yousfi, Abderrahim, De Martino, Giuseppe, Della Corte, Francesco G.

“…The role of a non-uniform p-base doping concentration in determining the electrical characteristics of a metal oxide semiconductor field effect transistor…”
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Experimental characterization and numerical analysis of the 4H-SiC p–i–n diodes static and transient behaviour by Pezzimenti, Fortunato, Della Corte, Francesco G., Nipoti, Roberta

“…Steady-state and turn-off switching characteristics of aluminium-implanted 4H-SiC p–i–n diodes designed for high-current density operation, are investigated…”
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Design considerations for a-Si:H/SiGe/Si heterojunction bipolar transistors by Della Corte, F.G., Pezzimenti, F.

“…A SiGe/Si heterojunction bipolar transistor (HBT) with a thin n/sup +/ hydrogenated amorphous silicon (a-Si:H) emitter is discussed, in particular with…”
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