Search Results - "Petrychuk, M. V."

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  1. 1

    Noise characterization of metal-single molecule contacts by Xiang, D., Sydoruk, V., Vitusevich, S., Petrychuk, M. V., Offenhäusser, A., Kochelap, V. A., Belyaev, A. E., Mayer, D.

    Published in Applied physics letters (09-02-2015)
    “…Noise spectra of molecule-free and molecule-containing mechanically controllable break junctions were investigated. The molecule-free junctions revealed…”
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    Journal Article
  2. 2

    Molecular dynamics study of the primary ferrofluid aggregate formation by Tanygin, B.M., Kovalenko, V.F., Petrychuk, M.V., Dzyan, S.A.

    “…Investigations of the phase transitions and self-organization in the magnetic aggregates are of the fundamental and applied interest. The long-range ordering…”
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    Journal Article
  3. 3

    Noise spectroscopy of transport properties in carbon nanotube field-effect transistors by Sydoruk, V.A., Petrychuk, M.V., Ural, A., Bosman, G., Offenhäusser, A., Vitusevich, S.A.

    Published in Carbon (New York) (01-03-2013)
    “…Transport properties of single-walled carbon nanotube (CNT) structures with Pd contacts were studied using noise spectroscopy. The high values of the mobility…”
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    Journal Article
  4. 4

    1/ f noise and mechanisms of the conductivity in carbon nanotube bundles by Danilchenko, B.A., Tripachko, N.A., Lev, S., Petrychuk, M.V., Sydoruk, V.A., Sundqvist, B., Vitusevich, S.A.

    Published in Carbon (New York) (01-12-2011)
    “…Experimental results are reported of the investigation of conductivity mechanisms in metallic single-wall carbon nanotube (SWCNT) bundles in a wide temperature…”
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    Journal Article
  5. 5

    Magneto-optical extinction trend inversion in ferrofluids by Shulyma, S.I., Tanygin, B.M., Kovalenko, V.F., Petrychuk, M.V.

    “…Effects of pulse magnetic field on the optical transmission properties of thin ferrofluid (FF) layers were experimentally investigated. It was observed that,…”
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    Journal Article
  6. 6

    Periodic structure of spicular magnetic clusters in a magnetic liquid by Moldovan, B.N., Antonyuk, O.A., Petrychuk, M.V., Kovalenko, V.F.

    Published in Journal of colloid and interface science (15-04-2006)
    “…The behavior of clusters formed by magnetic particles of magnetic liquid placed into a cylindrical capillary tube in magnetic field is described. Spicular…”
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    Journal Article
  7. 7

    Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels by Vitusevich, S. A., Danylyuk, S. V., Klein, N., Petrychuk, M. V., Avksentyev, A. Yu, Sokolov, V. N., Kochelap, V. A., Belyaev, A. E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

    Published in Applied physics letters (03-02-2003)
    “…We address experimental and theoretical study of a two-dimensional electron gas transport at low and moderate electric fields. The devices under study are…”
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    Journal Article
  8. 8

    Effects of γ-irradiation on AlGaN/GaN-based HEMTs by Vitusevich, S. A., Klein, N., Belyaev, A. E., Danylyuk, S. V., Petrychuk, M. V., Konakova, R. V., Kurakin, A. M., Rengevich, A. E., Avksentyev, A. Yu, Danilchenko, B. A., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

    Published in Physica status solidi. A, Applied research (01-01-2003)
    “…γ‐ray radiation effect has been studied on transport and noise properties of high electron mobility transistors (HEMTs) with gate lengths in the range from 350…”
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    Journal Article Conference Proceeding
  9. 9

    Specific interactions and charge transport in ternary PVDF/polyaniline/MWCNT nanocomposite films by Rudenko, R.M., Voitsihovska, O.O., Poroshin, V.M., Petrychuk, M.V., Pavlyuk, S.P., Nikolenko, A.S., Ogurtsov, N.A., Noskov, YuV, Sydorov, D.O., Pud, A.A.

    Published in Composites science and technology (29-09-2020)
    “…This paper reveals the specificity of morphology, structure and electrical properties of the new compression-molded ternary nanocomposite films based on…”
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    Journal Article
  10. 10

    Influence of surface passivation on low-frequency noise properties of AlGaN/GaN high electron mobility transistor structures by Vitusevich, S. A., Petrychuk, M. V., Danylyuk, S. V., Kurakin, A. M., Klein, N., Belyaev, A. E.

    “…We investigated low‐frequency noise in passivated and nonpassivated AlGaN/GaN high electron mobility transistor (HEMT) heterostructures grown on SiC substrate…”
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    Journal Article
  11. 11

    Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors by Vitusevich, S. A., Danylyuk, S. V., Klein, N., Petrychuk, M. V., Sokolov, V. N., Kochelap, V. A., Belyaev, A. E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

    Published in Applied physics letters (25-03-2002)
    “…The low-frequency 1/f noise characteristics of AlGaN/GaN high-electron-mobility transistors with gate length scaled down to 150 nm grown on sapphire by…”
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    Journal Article
  12. 12

    Equilibrium and non-equilibrium 1/f noise in AlGaN/GaN TLM structures by Vitusevich, S.A., Danylyuk, S.V., Petrychuk, M.V., Antoniuk, O.A., Klein, N., Belyaev, A.E.

    Published in Applied surface science (15-11-2004)
    “…The low frequency noise of AlGaN/GaN transmission line model (TLM) structures has been investigated in a wide temperature range. Deviation of low frequency…”
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    Journal Article Conference Proceeding
  13. 13

    Ferrofluid nucleus phase transitions in an external uniform magnetic field by Tanygin, B. M, Shulyma, S. I, Kovalenko, V. F, Petrychuk, M. V

    Published 10-02-2017
    “…Chin. Phys. B. 24 (10):104702 (2015) The phase transition between a massive dense phase and a diluted superparamagnetic phase has been studied by means of a…”
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    Journal Article
  14. 14

    Magneto-optical extinction trend inversion in ferrofluids by Shulyma, S. I, Tanygin, B. M, Kovalenko, V. F, Petrychuk, M. V

    Published 27-10-2016
    “…Effects of pulse magnetic field on the optical transmission properties of thin ferrofluid (FF) layers were experimentally investigated. It was observed that,…”
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    Journal Article
  15. 15

    Low-frequency Noise in Individual Carbon Nanotube Field-Effect Transistors with Top, Side and Back Gate Configurations: Effect of Gamma Irradiation by Sydoruk, V. A, Goß, K, Meyer, C, Petrychuk, M. V, Danilchenko, B. A, Weber, P, Stampfer, C, Li, J, Vitusevich, S. A

    Published 18-11-2013
    “…We report on the influence of low gamma irradiation (10^4 Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with…”
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    Journal Article
  16. 16
  17. 17

    Molecular Dynamics Study of the Primary Ferrofluid Aggregate Formation by Tanygin, B. M, Kovalenko, V. F, Petrychuk, M. V, Dzyan, S. A

    Published 24-06-2012
    “…Investigations of the phase transitions and self-organization in the magnetic aggregates are of the fundamental and applied interest. The long-range ordering…”
    Get full text
    Journal Article
  18. 18

    Noise and Transport Characterization of Single Molecular Break Junctions with Individual Molecule by Sydoruk, V. A, Xiang, D, Vitusevich, S. A, Petrychuk, M. V, Vladyka, A, Zhang, Y, Offenhäusser, A, Kochelap, V. A, Belyaev, A. E, Mayer, D

    Published 18-06-2012
    “…J. Appl. Phys. 112, 014908 (2012) We studied the noise spectra of molecule-free and molecule-containing mechanically controllable break junctions. Both types…”
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    Journal Article
  19. 19

    Transport of single-walled carbon nanotube transistors after gamma radiation treatment for high-speed applications by Sydoruk, V A, Petrychuk, M V, Danilchenko, B A, Offenhaeusser, A, Vitusevich, S A

    “…In recent years, considerable attention has been focused on studies on the influence of gamma radiation treatments on the performance of semiconductor…”
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    Conference Proceeding
  20. 20

    Mechanisms of current formation in resonant tunneling AlN∕GaN heterostructures by Petrychuk, M. V., Belyaev, A. E., Kurakin, A. M., Danylyuk, S. V., Klein, N., Vitusevich, S. A.

    Published in Applied physics letters (26-11-2007)
    “…This paper presents an analysis of transport and noise properties of double-barrier resonant tunneling diodes formed on the basis of AlN∕GaN heterostructures…”
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    Journal Article