Unidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure

Unidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure

Zirconia nanotubular layer with an outer tube diameter « 25 nm was synthesized by potentiostatic anodization. The Zr/ZrO 2 -NT/Au memristive structure is fabricated using stencil mask and magnetron sputtering techniques. Current-voltage characteristics are measured in full cycles of resistive switch...

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Bibliographic Details
Published in:2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology (USBEREIT) pp. 348 - 351
Main Authors: Vokhmintsev, Alexander S., Kamalov, Robert V., Kozhevina, Anna V., Petrenyov, Ilya A., Martemyanov, Nikolay A., Weinstein, Ilya A.
Format: Conference Proceeding
Language:English
Published: IEEE 01-05-2018
Subjects:
anodization
Biomedical measurement
Conductivity
Current measurement
memristor
Memristors
resistive switching
Switches
Voltage measurement
zirconia nanotubes
Zirconium
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Summary:Zirconia nanotubular layer with an outer tube diameter « 25 nm was synthesized by potentiostatic anodization. The Zr/ZrO 2 -NT/Au memristive structure is fabricated using stencil mask and magnetron sputtering techniques. Current-voltage characteristics are measured in full cycles of resistive switching with varying parameters of the applied harmonic voltage. An equivalent circuit with unidirectional electrical conductivity for the studied structure is proposed. Estimates of the electrical resistance of memristors in high- and intermediate resistivity states are performed. The high synaptic plasticity of memristors based on the Zr/ZrO 2 -NT/Au structure is shown.
DOI:10.1109/USBEREIT.2018.8384620