Search Results - "Peters, Dethard"

A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study by Aichinger, Thomas, Lenahan, Patrick M., Tuttle, Blair R., Peters, Dethard

“…Nitrogen implantation creates a high density of recombination centers in SiC which can degrade the performance of ion implanted pn junctions. We use spin…”
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1200V SiC Trench-MOSFET optimized for high reliability and high performance by Peters, D., Aichinger, T., Basler, T., Bergner, W., Kueck, D., Esteve, R.

“…A detailed analysis of the typical static and dynamic performance of the new developed Infineon 1200V CoolSiCTM MOSFET is shown which is designed for an…”
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Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices by Noborio, Masato, Grieb, Michael, Bauer, Anton J, Peters, Dethard, Friedrichs, Peter, Suda, Jun, Kimoto, Tsunenobu

“…In this paper, we have investigated reliability of n- and p-type 4H-SiC(0001) metal--oxide--semiconductor (MOS) devices with N 2 O-grown oxides and deposited…”
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Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices by Noborio, Masato, Grieb, Michael, Bauer, Anton J., Peters, Dethard, Friedrichs, Peter, Suda, Jun, Kimoto, Tsunenobu

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Investigation of threshold voltage stability of SiC MOSFETs by Peters, Dethard, Aichinger, Thomas, Basler, Thomas, Rescher, Gerald, Puschkarsky, Katja, Reisinger, Hans

“…Silicon carbide (SiC) based metal-oxide semiconductor-field-effect-transistors (MOSFETs) show excellent switching performance and reliability. However,…”
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Charge Pumping Measurements on Differently Passivated Lateral 4H-SiC MOSFETs by Salinaro, Alberto, Pobegen, Gregor, Aichinger, Thomas, Zippelius, Bernd, Peters, Dethard, Friedrichs, Peter, Frey, Lothar

“…This paper shows a successful transfer of the charge pumping (CP) method, which is extensively applied on silicon (Si) transistors, to Si carbide (SiC) lateral…”
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Performance and ruggedness of 1200V SiC - Trench - MOSFET by Peters, Dethard, Siemieniec, Ralf, Aichinger, Thomas, Basler, Thomas, Esteve, Romain, Bergner, Wolfgang, Kueck, Daniel

“…This paper describes a novel SiC trench MOSFET concept. The device is designed to balance low conduction losses with Si-IGBT like reliability. Basic features…”
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Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation by Schörner, Reinhold, Friedrichs, Peter, Peters, Dethard, Stephani, Dietrich, Dimitrijev, Sima, Jamet, Philippe

“…This work presents improved channel mobility of n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) on 4H–SiC, achieved by gate-oxide…”
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Detailed investigation of n-channel enhancement 6H-SiC MOSFETs by Schorner, R., Friedrichs, P., Peters, D.

“…Basic MOSFET parameters like inversion layer mobility, threshold voltage, intrinsic mobility reduction factor and interface state density extracted from the…”
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A SiC Trench MOSFET concept offering improved channel mobility and high reliability by Siemieniec, Ralf, Peters, Dethard, Esteve, Romain, Bergner, Wolfgang, Kuck, Daniel, Aichinger, Thomas, Basler, Thomas, Zippelius, Bernd

“…This work discusses the challenges in the design of a SiC Power MOSFET compared to their silicon-based relatives and describes a novel SiC Trench MOSFET…”
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An 1800 V triple implanted vertical 6H-SiC MOSFET by Peters, D., Schorner, R., Friedrichs, P., Volkl, J., Mitlehner, H., Stephani, D.

“…6H silicon carbide vertical power MOSFETs with a blocking voltage of 1800 V have been fabricated. Applying a novel processing scheme, n/sup +/ source regions,…”
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Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO$_2$ interface by Gruber, Gernot, Cottom, Jonathon, Meszaros, Robert, Koch, Markus, Pobegen, Gregor, Aichinger, Thomas, Peters, Dethard, Hadley, Peter

“…SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However,…”
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SiC power devices with low on-resistance for fast switching applications by Friedrichs, P., Mitlehner, H., Dohnke, K.O., Peters, D., Schorner, R., Weinert, U., Baudelot, E., Stephani, D.

“…Silicon carbide switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages is believed…”
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Characterization of fast 4.5 kV SiC p-n diodes by Peters, D., Friedrichs, P., Mitlehner, H., Schoerner, R., Weinert, U., Weis, B., Stephani, D.

“…New results of silicon carbide p-n diodes show a promising performance for high voltage applications. The diodes are characterized by high power ratings,…”
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