Search Results - "Pesic, Tatjana"

Spice modeling of ionizing radiation effects in CMOS devices by Pesic-Brdjanin, Tatjana

“…Electric characteristics of devices in advanced CMOS technologies change over the time because of the impact of the ionizing radiation effects. Device aging is…”
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Modelling of strained-Si/SiGe NMOS transistors including DC self-heating by Jankovic, Nebojsa D., Pesic, Tatjana V., O’Neill, Anthony

“…In this paper, a new model of surface-channel strained-Si/SiGe NMOSFETs is derived based on the extension of non-quasi-static (NQS) circuit model developed…”
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Prophylactic heme arginate therapy in acute intermittent hepatic porphyria: A case report by Krnetic, Zarko, Pesic, Tatjana, Savic, Zeljka, Jocic, Tatiana, Latinovic-Bosnjak, Olgica, Vracaric, Vladimir, Damjanov, Dimitrije

“…Introduction. Among the acute hepatic porphyrias, a small percentage of patients, predominantly female, present with recurrent cyclic attacks of acute…”
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Strained Silicon Layer in CMOS Technology by Tatjana Pešić-Brđanin, Branko L. Dokić

“…Semiconductor industry is currently facing with the fact that conventional submicron CMOS technology is approaching the end of their capabilities, at least…”
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The Predictive Significance of Doppler Parameters on the Arteriovenous Fistula Maturation for Hemodialysis—A Single Center Experience by Stolić, Radojica, Milic, Marija, Mitrovic, Vekoslav, Bulatovic, Kristina, Minic, Slavisa, Pesic, Tatjana, Lazic, Bratislav

“…Background: Doppler ultrasound examination of blood vessels has a significant role in planning and identifying parameters that affect the functioning and…”
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1D Physical Non-Quasi Static BJT Circuit Model Based on the Equivalent Transmission Line Analysis by Jankovic, Nebojsa D., Pesic, Tatjana V., Karamarkovic, Jugoslav P.

“…We describe a novel physically based non-quasi-static (NQS) bipolar junction transistor (BJT) model derived from theoretical analysis of the equivalent…”
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Analytic models of CMOS logic in various regimes by Dokic, Branko, Pesic-Brdjanin, Tatjana, Dabic, Rados

“…In this paper, comparative analytic models of static and dynamic characteristics of CMOS digital circuits in strong, weak and mixed inversion regime have been…”
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All injection level power PiN diode model including temperature dependence by Jankovic, Nebojsa, Pesic, Tatjana, Igic, Petar

“…A novel power PiN diode model is derived based on the generalised all-injection level minority carrier drift–diffusion theory. An equivalent lossy transmission…”
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Class D Audio Amplifier with Reduced Distortion by Kovacevic, Svjetlana, Pesic-Brdjanin, Tatjana, Galic, Jovan

“…In this paper, the design and the implementation of the low-voltage class D audio amplifier is presented. The amplifier topology with reduced distortion, based…”
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Intermodulation distortion of class D audio amplifier using pulse density modulation by Kovacevic, Svjetlana, Pesic-Brdanin, Tatjana, Galic, Jovan

“…In this paper, an analysis of intermodulation distortion of class D audio amplifier is presented. Class D audio amplifier uses MOSFETs in switching mode is…”
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Spice modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs by Jankovic, Nebojsa, Pesic-Brdjanin, Tatjana

“…As is the case with conventional planar MOS transistors, the electrical characteristics of highly-scaled multi-gate field-effect transistors (FinFETs) also…”
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Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET by Jankovic, Nebojsa, Pesic, Tatjana

“…In this paper, we describe a compact non-quasi-static (NQS) model of fully-depleted (FD) double-gate (DG) SOI MOSFETs developed on the modified NQS model for…”
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Low-voltage low-power CMOS design by Dokic, Branko L., Pesic-Brdanin, Tatjana, Cavka, Drago

“…Minimal power dissipation is one of the main characteristics of portable devices, smart sensor networks and nodes, medical equipments, etc. The best choice is…”
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Sub-sircuit model of fully-depleted double-gate FinFET including the effects of oxide and interface trapped charge by Pesic-Brdjanin, Tatjana, Jankovic, Nebojsa

“…In this paper, a method for including the effects of oxide and interface trapped charge in standard SPICE model of fully-depleted double-gate FinFET is…”
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An analytical model of the inverse base width modulation effect in SiGe graded heterojunction bipolar transistors by Pesic, Tatjana, Jankovic, Nebojsa

“…The analytical model of the collector current ideality factor degradation at high Vbe in modern SiGe graded base heterojunction bipolar transistors (HBTs) has…”
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A compact nonquasi-static MOSFET model based on the equivalent nonlinear transmission line by Pesic, T.V., Jankovic, N.D.

“…A compact physics-based nonquasi-static (NQS) metal-oxide-semiconductor field-effect transistor (MOSFET) model with the equivalent nonlinear transmission line…”
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3D simulation of cross-shaped Hall sensor and its equivalent circuit model by Jovanovic, E., Pesic, T., Pantic, D.

“…The complete technology process flow and electrical characteristics of cross-shaped Hall sensor in high voltage bulk CMOS technology have been accurately…”
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Physical-based non-quasi static MOSFET model for DC, AC and transient circuit analysis by Pesic, T., Jankovic, N.

“…In this paper, we describe a compact physical-based non-quasi static (NQS) MOST model for SPICE. Based on the comparison with results of 2-D device…”
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The voice fundamental frequency statistical parameters under noisy conditions with the cepstrum method by Galic, J., Pesic-Brdanin, T.

“…An influence of white noise on basic statistical parameters (the mean, the standard deviation, the median and the mode) of the speech signal fundamental…”
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