Search Results - "Peruchetti, J. C."

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    Evidence of hole-electron quasiparticle interference in ErSi2 semimetal by fourier-transform scanning tunneling spectroscopy by VONAU, F, AUBEL, D, GEWINNER, G, ZABROCKI, S, PERUCHETTI, J. C, BOLMONT, D, SIMON, L

    Published in Physical review letters (21-10-2005)
    “…The semimetallic ErSi2 layer grown on Si(111) substrates provides an ideally confined 2D electron and hole gas that reflects in complex standing wave pattern…”
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    Symmetry of standing waves generated by a point defect in epitaxial graphene by Simon, L., Bena, C., Vonau, F., Aubel, D., Nasrallah, H., Habar, M., Peruchetti, J. C.

    “…Using scanning tunneling microscopy (STM) and Fourier Transform STM (FT-STM), we have studied a point defect in epitaxial graphene grown on silicon carbide…”
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    Epitaxy of CoSi2 on Si(111) at low temperature (≤400°C) by HADERBACHE, L, WETZEL, P, PIRRI, C, PERUCHETTI, J. C, BOLMONT, D, GEWINNER, G

    Published in Applied physics letters (10-10-1988)
    “…The epitaxial growth of thin CoSi2 films on a Si(111) surface has been studied using surface techniques such as low-energy electron diffraction and…”
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    A structural parallel between Ge- and Si-induced 4 × 4 and 3 × 3 reconstructions on SiC(0 0 0 1) drawn from comparative RHEED oscillations by Aït-Mansour, K., Kubler, L., Diani, M., Dentel, D., Bischoff, J.-L., Simon, L., Peruchetti, J.C., Galliano, A.

    Published in Surface science (01-09-2004)
    “…The initial Ge growth stages on a (√3 × √3) R30°-reconstructed SiC(0 0 0 1) surface (√3) have been studied using a complete set of surface techniques such as…”
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    Hydrogen adsorption on erbium silicide surface by Saintenoy, S., Wetzel, P., Pirri, C., Peruchetti, J.C., Bolmont, D., Gewinner, G.

    Published in Solid state communications (01-06-1995)
    “…Two-dimensional p (1×1) as well as √3 x√3 R 30° Er silicide layers epitaxially grown on Si (111), have been exposed to atomic hydrogen. High-resolution…”
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    Er/Si(111) interface intermixing investigation using core level photoemission by HADERBACHE, L, WETZEL, P, PIRRI, C, PERUCHETTI, J. C, BOLMONT, D, GEWINNER, G

    Published in Applied physics letters (23-07-1990)
    “…We present in this letter Si 2p core level photoemission measurements on the Er/Si (111) interface formed at room temperature. These spectroscopic data are…”
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    Metastable film growth of Cr on Cu(OO1) by Rouyer, D., Krembel, C., Hanf, M.C., Peruchetti, J.C., Bolmont, D., Gewinner, G.

    Published in Surface science (1995)
    “…The growth and structure of Cr films (0–30 nominal monolayers (ML)) on Cu(001) held at room temperature have been investigated by photoemission, photoelectron…”
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