Search Results - "Peruchetti, J. C."
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Evidence of hole-electron quasiparticle interference in ErSi2 semimetal by fourier-transform scanning tunneling spectroscopy
Published in Physical review letters (21-10-2005)“…The semimetallic ErSi2 layer grown on Si(111) substrates provides an ideally confined 2D electron and hole gas that reflects in complex standing wave pattern…”
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Symmetry of standing waves generated by a point defect in epitaxial graphene
Published in The European physical journal. B, Condensed matter physics (01-06-2009)“…Using scanning tunneling microscopy (STM) and Fourier Transform STM (FT-STM), we have studied a point defect in epitaxial graphene grown on silicon carbide…”
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Epitaxy of CoSi2 on Si(111) at low temperature (≤400°C)
Published in Applied physics letters (10-10-1988)“…The epitaxial growth of thin CoSi2 films on a Si(111) surface has been studied using surface techniques such as low-energy electron diffraction and…”
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A structural parallel between Ge- and Si-induced 4 × 4 and 3 × 3 reconstructions on SiC(0 0 0 1) drawn from comparative RHEED oscillations
Published in Surface science (01-09-2004)“…The initial Ge growth stages on a (√3 × √3) R30°-reconstructed SiC(0 0 0 1) surface (√3) have been studied using a complete set of surface techniques such as…”
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Hydrogen adsorption on erbium silicide surface
Published in Solid state communications (01-06-1995)“…Two-dimensional p (1×1) as well as √3 x√3 R 30° Er silicide layers epitaxially grown on Si (111), have been exposed to atomic hydrogen. High-resolution…”
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Fermi contour imaging of the two-dimensional semimetal ErSi2 by Fourier transform STM
Published in Physical review. B, Condensed matter and materials physics (17-02-2004)Get full text
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Er/Si(111) interface intermixing investigation using core level photoemission
Published in Applied physics letters (23-07-1990)“…We present in this letter Si 2p core level photoemission measurements on the Er/Si (111) interface formed at room temperature. These spectroscopic data are…”
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Co/Si(111) interface formation at room temperature
Published in Physical review. B, Condensed matter (15-10-1987)Get full text
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Growth of a two-dimensional Er silicide on Si(111)
Published in Physical review. B, Condensed matter (15-04-1992)Get full text
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Nucleation of a two-dimensional compound during epitaxial growth of CoSi2 on Si(111)
Published in Physical review. B, Condensed matter (1984)Get full text
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Cobalt disilicide epitaxial growth on the silicon (111) surface
Published in Physical review. B, Condensed matter (01-01-1984)Get full text
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Surface structure of epitaxial CoSi2 crystals grown on Si(111)
Published in Physical review. B, Condensed matter (15-03-1986)Get full text
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13
Electronic and magnetic structure of a Cr monolayer on Ag(100)
Published in Physical review. B, Condensed matter (15-11-1991)Get full text
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Growth of a flat Cr monolayer on Ag(100)
Published in Physical review. B, Condensed matter (15-10-1991)Get full text
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Metastable film growth of Cr on Cu(OO1)
Published in Surface science (1995)“…The growth and structure of Cr films (0–30 nominal monolayers (ML)) on Cu(001) held at room temperature have been investigated by photoemission, photoelectron…”
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Formation of CrSi and CrSi2 upon annealing of Cr overlayers on Si(111)
Published in Physical review. B, Condensed matter (15-04-1987)Get full text
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Room-temperature growth of Er films on Si(111) : a photoelectron spectroscopy investigation
Published in Physical review. B, Condensed matter (15-03-1991)Get full text
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18
Formation of an interfacial alloy and epitaxial bcc Cr layers on Au(100)
Published in Physical review. B, Condensed matter (15-01-1989)Get full text
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Energy-band structure of CoSi2 epitaxially grown on Si(111)
Published in Physical review. B, Condensed matter (15-07-1988)Get full text
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Angle-resolved-photoemission study of the Cr(100) surface
Published in Physical review. B, Condensed matter (01-01-1983)Get full text
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