Search Results - "Pershenkov, V. S."

Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses by Pershenkov, V.S., Ullán, M., Wilder, M., Spieler, H., Spencer, E., Rescia, S., Newcomer, F.M., Martinez-McKinney, F., Kononenko, W., Grillo, A.A., Díez, S.

“…•The physical mechanism of current gain recovery is presented.•Recovery is related to the dependence of maximum saturated damage on dose rate.•Model shows that…”
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Temperature control system for the study of single event effects in integrated circuits using a cyclotron accelerator by Bakerenkov, A.S., Belyakov, V.V., Kozyukov, A.E., Pershenkov, V.S., Solomatin, A.V., Shurenkov, V.V.

“…The temperature control system for the study of single event disruptions produced by hard ion impacts in integrated circuits is described. Heating and cooling…”
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Exhaled Breath Analysis in Diagnostics of Cardiovascular Diseases by Bykova, A A, Malinovskaya, L K, Chomakhidze, P Sh, Trushina, O V, Shaltaeva, Y R, Belyakov, V V, Golovin, A V, Pershenkov, V S, Syrkin, A L, Betelin, V B, Kopylov, Ph Yu

“…Exhaled breath analysis is a novel tool for diagnostics of different diseases. Taking into account the secretory function of the lungs, the composition of…”
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The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices by Pershenkov, V.S., Maslov, V.B., Cherepko, S.V., Shvetzov-Shilovsky, I.N., Belyakov, V.V., Sogoyan, A.V., Rusanovsky, V.I., Ulimov, V.N., Emelianov, V.V., Nasibullin, V.S.

“…It is shown that emitter-base junction bias is significant for low dose rate irradiation response of npn and pnp bipolar transistors. The effect is more…”
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Effect of emitter-base bias during pre-irradiation infrared illumination on the radiation response of bipolar transistors by Pershenkov, V.S., Bashin, A.Y., Zebrev, G.I., Avdeev, S.V., Belyakov, V.V., Ulimov, V.N., Emelianov, V.V.

“…Enhancement and suppression of radiation-induced current-gain degradation in bipolar transistors has been observed after pre-irradiation infrared (IR)…”
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Proton Transfer Reaction Mass Spectrometry of Exhaled Breath in Diagnostics of Heart Failure by Kopylov, Ph Yu, Syrkin, A L, Chomakhidze, P Sh, Bykova, A A, Yu Shhekochihin, D, Shaltaeva, Yu R, Belyakov, V V, Pershenkov, V S, Samotaev, N N, Golovin, A V, Vasil'ev, V K, Malkin, E K, Gromov, E A, Ivanov, I A, Lipatov, D Ju, Yakovlev, D Ju, Betelin, V B

“…Exhaled breath analysis is one of directions in the search for novel biomarkers of chronic heart failure (CHF). According…”
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Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment by Zebrev, G.I., Pavlov, D.Y., Pershenkov, V.S., Nikiforov, A.Y., Sogoyan, A.V., Boychenko, D.V., Ulimov, V.N., Emelyanov, V.V.

“…A new analytical model for enhanced yield of radiation-induced charge in low-field thick oxides due to lesser recombination under low-dose-rate and high…”
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IC’s radiation effects modeling and estimation by Belyakov, V.V, Chumakov, A.I, Nikiforov, A.Y, Pershenkov, V.S, Skorobogatov, P.K, Sogoyan, A.V

“…The approach for IC's radiation hardness estimation and fault prediction is presented in this paper. It is based on the implementation of low-energy laboratory…”
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Effect of aging on radiation response of bipolar transistors by Pershenkov, V.S., Slesarev, A.Y., Sogoyan, A.V., Belyakov, V.V., Kekukh, V.B., Bashin, A.Y., Ivashin, D.V., Motchkine, V.S., Ulimov, V.N., Emelianov, V.V.

“…A thermally activated aging process is investigated by experimental evaluation of the change in radiation response of test PNP and NPN transistors over a wide…”
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Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors by Belyakov, V.V., Pershenkov, V.S., Shalnov, A.V., Shvetzov-Shilovsky, I.N.

“…A possible physical mechanism for bipolar transistor low-dose-rate irradiation response is discussed. This mechanism is described in terms of shallow electron…”
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Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures by Pershenkov, V.S., Belyakov, V.V., Shalnov, A.V.

“…A method for low-dose-rate MOS device response testing is presented and verified. The test technique is based on the use of a special switched-bias irradiation…”
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X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages by Levin, M.N, Gitlin, V.R, Kadmensky, S.G, Ostrouhov, S.S, Pershenkov, V.S

“…Soft X-ray (∼10 keV) and near ultra-violet radiation based technique for precise adjustment of MOS devices and integrated circuit thresholds has been…”
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The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs by Pershenkov, V.S., Chirokov, M.S., Bretchko, P.T., Fastenko, P.O., Baev, V.K., Belyakov, V.V.

“…A significant contribution of fringing field effect on radiation-induced leakage current in oxide isolation structure and damage nonuniformity in MOSFET was…”
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Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response by Pershenkov, V.S., Avdeev, S.V., Tsimbalov, A.S., Levin, M.N., Belyakov, V.V., Ivashin, D.V., Slesarev, A.Y., Bashin, A.Y., Zebrev, G.I., Ulimov, V.N., Emelianov, V.V.

“…The experimental results on the influence of UV and IR illumination and hydrogen ambient on the radiation response of metal-oxide-semiconductor (MOS) and…”
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Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices by Emelianov, V.V., Sogoyan, A.V., Meshurov, O.V., Ulimov, V.N., Pershenkov, V.S.

“…Modeling of the field and thermal dependencies of radiation-induced charge annealing, based on the assumption that the energy level of defects in the oxide is…”
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Technique for Numerical Simulation of Post-irradiation Annealing Including Temperature Drift of Electrical Parameters of Devices under Test by Bakerenkov, A. S., Rodin, A. S., Felitsyn, V. A., Pershenkov, V. S., Zhukov, A. I.

“…Dependences of LM 111 voltage comparator input current on time during post-radiation annealing are investigated. The technique based on the Gummel- Poon model…”
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Proposed two-level Acceptor-Donor (AD) center and the nature of switching traps in irradiated MOS structures by Pershenkov, V.S., Cherepko, S.V., Sogoyan, A.V., Belyakov, V.V., Ulimov, V.N., Abramov, V.V., Shalnov, A.V., Rusanovsky, V.I.

“…A phenomenological model of switching traps in irradiated metal-oxide-semiconductor (MOS) structures is presented. After electron capture, the E'/sub /spl…”
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Investigation of MOSFET operation in bipolar mode by Pershenkov, V.S., Belyakov, V.V., Cherepko, S.V., Shvetzov-Shilovsky, I.N., Abramov, V.V.

“…The work is concerned with the properties of conventional MOSFET in bipolar mode of operation. It is shown that the base current can provide useful information…”
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Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses by Emelianov, V.V., Zebrev, G.I., Ulimov, V.N., Useinov, R.G., Belyakov, V.V., Pershenkov, V.S.

“…The postirradiation response of n-channel MOSTs during thermal and electrical stresses is investigated. It is found that reversible positive charge annealing…”
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Single transistor technique for interface trap density measurement in irradiated MOS devices by Pershenkov, V.S, Cherepko, S.V, Ivanov, R.E, Shalnov, A.V, Abramov, V.V

“…The effect of interface trap charge variation during measurement of the MOSFET current–voltage characteristic has been examined. Taking into account this…”
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