Search Results - "Perozek, Joshua"

Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors by Kim, Yeongin, Suh, Jun Min, Shin, Jiho, Liu, Yunpeng, Yeon, Hanwool, Qiao, Kuan, Kum, Hyun S., Kim, Chansoo, Lee, Han Eol, Choi, Chanyeol, Kim, Hyunseok, Lee, Doyoon, Lee, Jaeyong, Kang, Ji-Hoon, Park, Bo-In, Kang, Sungsu, Kim, Jihoon, Kim, Sungkyu, Perozek, Joshua A., Wang, Kejia, Park, Yongmo, Kishen, Kumar, Kong, Lingping, Palacios, Tomás, Park, Jungwon, Park, Min-Chul, Kim, Hyung-jun, Lee, Yun Seog, Lee, Kyusang, Bae, Sang-Hoon, Kong, Wei, Han, Jiyeon, Kim, Jeehwan

“…Recent advances in flexible and stretchable electronics have led to a surge of electronic skin (e-skin)–based health monitoring platforms. Conventional…”
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First Demonstration of Optically-Controlled Vertical GaN finFET for Power Applications by Hsia, Jung-Han, Perozek, Joshua Andrew, Palacios, Tomas

“…In this work, we propose a novel optically-controlled vertical GaN finFET directly triggered by low-power ultraviolet (UV) illumination. The proposed device…”
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Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors by Shih, Pao-Chuan, Perozek, Joshua, Akinwande, Akintunde I., Palacios, Tomas

“…Field-emission-based vacuum transistors have been proposed as promising candidates for future high-power and harsh-environment electronic devices. However, the…”
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Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHz by Perozek, Joshua A., Zubair, Ahmad, Palacios, Tomas

“…GaN vertical finFETs are capable of high breakdown voltages and large current density without the need for regrowth or p-type doping. These attributes make…”
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GaN 2.0: Power FinFETs, Complementary Gate Drivers and Low-Cost Vertical Devices by Palacios, Tomas, Zubair, Ahmad, Niroula, John, Perozek, Joshua, Chowdhury, Nadim, Pei, Dongfei, Dipsey, Mark, Emmer, Hal, Lu, Bin

“…This paper summarizes recent progress on the development of high frequency power switches based on Gallium Nitride (GaN). Both lateral and vertical device…”
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InAlN/GaN-on-Si HEMT with 4.5 W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration by Warnock, Shireen, Chen, Chang-Lee, Knechtl, Jeffrey, Molnar, Richard, Yost, Donna-Ruth, Cook, Matthew, Stull, Corey, Johnson, Ryan, Galbraith, Christopher, Daulton, Jeffrey, Hu, WeiLin, Pinelli, Gianni, Perozek, Joshua, Palacios, Tomas, Zhang, Beijia, Herd, Jeffrey, Keast, Craig

“…In this paper we present a fully CMOS-compatible fabrication process for GaN-on-Si monolithic microwave integrated circuits (MMICs) on 200-mm-diameter wafers…”
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