Search Results - "Perozek, J."

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations by Lee, H.-P., Perozek, J., Rosario, L. D., Bayram, C.

“…AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer…”
Get full text

First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate by Zubair, A., Perozek, J., Niroula, J., Aktas, O., Odnoblyudov, V., Palacios, T.

“…GaN vertical power FinFETs are promising high voltage switches for the next generation of high-frequency power electronics applications. Thanks to a vertical…”
Get full text