Search Results - "Perlman, B.S."

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  1. 1

    An assessment of potential nonlinear circuit models for the characterization of resonant tunneling diodes by Woolard, D.L., Buot, F.A., Rhodes, D.L., Xiaojia Lu, Perlman, B.S.

    Published in IEEE transactions on electron devices (01-02-1996)
    “…The intrinsically fast process of resonant tunneling through double barrier heterostructures along with the existence of negative differential resistance in…”
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    Journal Article
  2. 2

    Automatic Load Contour Mapping for Microwave Power Transistors by Cusack, J.M., Perlow, S.M., Perlman, B.S.

    “…A technique for large signal characterization of microwave power transistors is described. A computer-controlled apparatus is used to map contours of constant…”
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    Journal Article
  3. 3

    Trends in mixed signal RF and integrated microsystems by Perlman, B.S.

    “…Integrated mixed signal electronics combining analog, digital and radio frequency circuits is being used to realize beyond-leading-edge components and systems…”
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    Conference Proceeding
  4. 4

    Emerging technologies for modern communications and radar systems by Perlman, B.S.

    “…This paper discussed a variety of enabling technologies that complement the realization of highly integrated, multifunctional transceiver based systems. Key…”
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    Conference Proceeding
  5. 5

    Session 23: Microwave and Millimeter-Wave Measurements by Perlman, B.S.

    “…This session covers a wide variety of measurernent topics concerned with microwave and millimeter-waves. Papers will be presented on new methods, techniques…”
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    Conference Proceeding
  6. 6

    Parallel computation for microwave circuit simulation by Rhodes, D.L., Perlman, B.S.

    “…In this paper, the results of implementing a harmonic balance simulator, AGILE, on a variety of massively parallel computers (MPCs) is given. Descriptions of…”
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    Journal Article
  7. 7

    RF MEMS for high-frequency applications by Katehi, L.P.B., Perlman, B.S.

    “…RF MEMS has been identified as an area, which has the potential to provide a major impact on existing system architectures in sensors and communications by…”
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    Conference Proceeding
  8. 8

    Efficient high level parametric frequency converters by Perlman, B.S., Bossard, B.B.

    Published in Proceedings of the IEEE (01-03-1963)
    “…Summary form only. An abstract of the above-titled article, taken from the 1963 IEEE International Convention (held March 25-28, New York, NY, USA), is…”
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    Journal Article
  9. 9

    Thermally induced stability in transferred-electron amplifiers by Upadhyayula, L.C., Perlman, B.S.

    “…Recent publications discussed the effects of operating bias and circuit loading on the stability of transferred-electron amplifiers. During the course of our…”
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    Conference Proceeding
  10. 10

    Linear Microwave Solid State Transferred Electron Power Amplifiers with a Large Gain-Bandwidth Product by Perlman, B.S., Marx, R.E.

    “…In this paper we shall describe recent results with reflection type wide band solid state power amplifiers which show promise of replacing tubes in many…”
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    Conference Proceeding
  11. 11

    CW microwave amplification from circuit-stabilized epitaxial GaAs transferred electron devices by Perlman, B.S.

    Published in IEEE journal of solid-state circuits (01-12-1970)
    “…Stable c.w. reflection-type amplification at C- X-band frequencies has been obtained from circuit-stabilized GaAs transferred electron devices biased as high…”
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    Journal Article
  12. 12

    Computer-Controlled Infrared Microscope for Thermal Analysis of Microwave Transistors by Sechi, F.N., Perlman, B.S., Cusack, J.M.

    “…A new technique for acquiring the temperature profile of microwave power transistors by infrared scanning has been developed. It provides for emissivity…”
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    Conference Proceeding
  13. 13

    Current-Pumped Abrupt-Junction Varactor Power-Frequency Converters by Perlman, B.S.

    “…This paper presents equations and design curves for a noninverting frequency converter which will enable the engineer to design efficient, high-level…”
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    Journal Article
  14. 14

    Intrinsic oscillations in resonant tunneling structures by Woolard, D.L., Brown, E.R., Buot, F.A., Lu, X.J., Rhodes, D.L., Perlman, B.S.

    “…The resonant tunneling diode (RTD) is an important device because it yields a negative differential resistance which can respond very rapidly to changes in…”
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    Conference Proceeding
  15. 15

    Microwave properties and applications of negative conductance transferred electron devices by Perlman, B.S., Upadhyayula, C.L., Siekanowicz, W.W.

    Published in Proceedings of the IEEE (01-01-1971)
    “…The transferred electron effect in epitaxial GaAs has been used to realize a semiconductor device which exhibits a stable negative conductance over a wide…”
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    Journal Article
  16. 16

    Design and performance of transferred electron amplifiers using distributed equalizer networks by Upadhyayula, C.L., Perlman, B.S.

    Published in IEEE journal of solid-state circuits (01-02-1973)
    “…This paper describes improved techniques for the design of broad-band linear reflection-type microwave amplifiers using transferred electron devices. These…”
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    Journal Article
  17. 17

    Wide-Band Reflection-Type Transferred Electron Amplifiers by Perlman, B.S., Upadhyayula, C.L., Marx, R.E.

    “…Stable CW and pulsed linear-reflection-type amplification at C- and X-band frequencies using epitaxial-GaAs transferred electron devices is described. These…”
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    Journal Article
  18. 18

    Criterion for Nonreciprocal Injection Locking of Bilateral Microwave Oscillators (Correspondence) by Perlman, B.S., Walsh, T.E.

    “…A criterion is presented for establishing the required degree of isolation between injection-locked microwave oscillators to prevent reverse Iocking. In…”
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    Journal Article
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    A Large Signal Analysis Leading to Intermodulation Distortion Prediction in Abrupt Junction Varactor Upconverters by Perlow, S.M., Perlman, B.S.

    “…Even though the abrupt junction varactor parametric upconverter is a "square-law" device, it exhibits gain saturation. This nonlinearity of the transfer…”
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    Journal Article