Search Results - "Perevalov, T. V"

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  1. 1

    Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride by Islamov, D. R., Perevalov, T. V., Gismatulin, A. A., Azarov, I. A., Spesivtsev, E. V., Gritsenko, V. A.

    “…A mechanism of transverse charge transfer through hexagonal boron nitride (h-BN) in a MIS structure has been studied. Experimental data for charge transfer…”
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  2. 2

    Simulation of the Atomic and Electronic Structure of Oxygen Vacancies and Polyvacancies in ZrO2 by Perevalov, T. V.

    Published in Physics of the solid state (01-03-2018)
    “…Cubic, tetragonal, and monoclinic phases of zirconium oxide with oxygen vacancies and polyvacancies are studied by quantum chemical modeling of the atomic and…”
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  3. 3

    Nature of traps responsible for the memory effect in silicon nitride by Gritsenko, V. A., Perevalov, T. V., Orlov, O. M., Krasnikov, G. Ya

    Published in Applied physics letters (08-08-2016)
    “…Nature of traps responsible for the memory effect in Si3N4 still remains the subject matter of much discussion. Based on our quantum chemical simulation…”
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  4. 4

    Charge Transport Mechanism in a PECVD Deposited Low-k SiOCH Dielectric by Perevalov, T. V., Gismatulin, A. A., Gritsenko, V. A., Xu, H., Zhang, J., Vorotilov, K. A., Baklanov, M. R.

    Published in Journal of electronic materials (01-05-2022)
    “…One of the most important issues during the selection of low- k dielectrics is related to their intrinsic properties including their electric breakdown and…”
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  5. 5

    Optical Properties of TiO2 Films Deposited by Reactive Electron Beam Sputtering by Kruchinin, V. N., Perevalov, T. V., Atuchin, V. V., Gritsenko, V. A., Komonov, A. I., Korolkov, I. V., Pokrovsky, L. D., Shih, Cheng Wei, Chin, Albert

    Published in Journal of electronic materials (01-10-2017)
    “…Titanium dioxide (anatase, a-TiO 2 ) films have been prepared by electron beam sputtering of a TiO 2 target in reactive atmosphere and their structural,…”
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  6. 6

    Charge transport in amorphous Hf0.5Zr0.5O2 by Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Cheng, C. H., Chin, A.

    Published in Applied physics letters (09-03-2015)
    “…In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5Zr0.5O2 is phonon-assisted tunneling…”
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  7. 7

    Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma by Perevalov, T. V., Iskhakzai, R. M. Kh, Prosvirin, I. P., Aliev, V. Sh, Gritsenko, V. A.

    Published in JETP letters (2022)
    “…It is shown that the treatment of stoichiometric HfO 2 , which is synthesized by atomic layer deposition, in electron cyclotron resonance hydrogen plasma leads…”
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  8. 8

    Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation by Islamov, D.R., Perevalov, T.V.

    Published in Microelectronic engineering (15-08-2019)
    “…In this study, we investigate the role of oxygen vacancies for the orthorhombic noncentrosymmetric Pbc21 Hf0.5Zr0.5O2 stabilization by means of ab initio…”
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  9. 9

    Atomic and Electronic Structures of Intrinsic Defects in Ta2O5: Ab Initio Simulation by Perevalov, T. V., Islamov, D. R., Chernykh, I. G.

    Published in JETP letters (01-06-2018)
    “…The atomic and electronic structure of intrinsic point defects in orthorhombic tantalum oxide has been studied by numerical simulation within the density…”
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  10. 10

    Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition by Perevalov, T. V., Gritsenko, V. A., Gutakovskii, A. K., Prosvirin, I. P.

    Published in JETP letters (2019)
    “…Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been…”
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  11. 11

    Electronic Structure of Oxygen Vacancies in the Orthorhombic Noncentrosymmetric Phase Hf0.5Zr0.5O2 by Perevalov, T. V., Gritsenko, V. A., Islamov, D. R., Prosvirin, I. P.

    Published in JETP letters (2018)
    “…The electronic structure of stoichiometric and oxygen-depleted Hf 0.5 Zr 0.5 O 2 in the orthorhombic noncentrosymmetric phase has been studied by X-ray…”
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  12. 12

    Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma by Perevalov, T. V., Iskhakzai, R. M. Kh, Aliev, V. Sh, Gritsenko, V. A., Prosvirin, I. P.

    “…The silicon oxide thin films obtained by thermal SiO 2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated…”
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  13. 13

    Atomic and electronic structures of the native defects responsible for the resistive effect in HfO2: ab initio simulations by Perevalov, T.V., Islamov, D.R.

    Published in Microelectronic engineering (15-08-2019)
    “…The oxygen vacancy, interstitial oxygen and hafnium, hafnium substituting oxygen and oxygen Frenkel pair in HfO2 are the probable defects which are able to…”
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  14. 14

    Electronic structure of oxygen vacancies in hafnium oxide by Perevalov, T.V., Aliev, V.Sh, Gritsenko, V.A., Saraev, A.A., Kaichev, V.V.

    Published in Microelectronic engineering (01-09-2013)
    “…[Display omitted] •We calculate XPS and absorption spectra for crystalline HfO2 in frame of hybrid DFT.•We got the experimental XPS for bombarding with Ar-ions…”
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  15. 15

    Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation by Pustovarov, V.A., Perevalov, T.V., Gritsenko, V.A., Smirnova, T.P., Yelisseyev, A.P.

    Published in Thin solid films (29-07-2011)
    “…Broad photoluminescence (PL) band at 2.97eV excited in the band near 6.0eV in amorphous chemical vapor deposition films is related to the neutral oxygen…”
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  16. 16

    Optical Properties of (ZrO2)1 – x(Y2O3)х (х = 0–0.037) Crystals Grown by Directional Crystallization of the Melt by Perevalov, T. V., Kruchinin, V. N., Rykhlitskii, S. V., Gritsenko, V. A., Eliseev, A. P., Lomonova, E. E.

    Published in Optics and spectroscopy (01-12-2020)
    “…The luminescent and optical properties of materials based on zirconium(IV) oxide grown by crystallization of ZrO 2 melts with 0, 2.0, 2.5, 2.8, and 3.7 mol %…”
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  17. 17

    Nanosized Potential Fluctuations in SiOx Synthesized by Plasma-Enhanced Chemical Vapor Deposition by Perevalov, T. V., Volodin, V. A., Novikov, Yu. N., Kamaev, G. N., Gritsenko, V. A., Prosvirin, I. P.

    Published in Physics of the solid state (01-12-2019)
    “…This work was devoted to studying the atomic structure and electron spectrum of a -SiO x : H films created on silicon and glass substrates by means of…”
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  18. 18

    Electronic Structure of Noncentrosymmetric α‑GeO2 with Oxygen Vacancy: Ab Initio Calculations and Comparison with Experiment by Atuchin, V. V, Kaichev, V. V, Korolkov, I. V, Saraev, A. A, Troitskaia, I. B, Perevalov, T. V, Gritsenko, V. A

    Published in Journal of physical chemistry. C (20-02-2014)
    “…Polycrystalline α-GeO2, space group P3221, has been prepared by low-temperature chemical synthesis. α-GeO2 electronic structure has been evaluated…”
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  19. 19

    Optical Properties of the SiOx (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide by Kruchinin, V. N., Perevalov, T. V., Aliev, V. Sh, Iskhakzai, R. M. Kh, Spesivtsev, E. V., Gritsenko, V. A., Pustovarov, V. A.

    Published in Optics and spectroscopy (01-10-2020)
    “…The optical properties and composition of thermal silicon oxide thin films processed in a hydrogen electron cyclotron resonance plasma have been studied by…”
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  20. 20

    Atomic and electronic structures of lutetium oxide Lu2O3 by Kaichev, V. V., Asanova, T. I., Erenburg, S. B., Perevalov, T. V., Shvets, V. A., Gritsenko, V. A.

    “…The chemical composition, electronic structure, structure, and physical properties a lutetium oxide Lu 2 O 3 film are studied by X-ray photoelectron…”
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