Search Results - "Perevalov, T. V"
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Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride
Published in Journal of experimental and theoretical physics (01-03-2023)“…A mechanism of transverse charge transfer through hexagonal boron nitride (h-BN) in a MIS structure has been studied. Experimental data for charge transfer…”
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2
Simulation of the Atomic and Electronic Structure of Oxygen Vacancies and Polyvacancies in ZrO2
Published in Physics of the solid state (01-03-2018)“…Cubic, tetragonal, and monoclinic phases of zirconium oxide with oxygen vacancies and polyvacancies are studied by quantum chemical modeling of the atomic and…”
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3
Nature of traps responsible for the memory effect in silicon nitride
Published in Applied physics letters (08-08-2016)“…Nature of traps responsible for the memory effect in Si3N4 still remains the subject matter of much discussion. Based on our quantum chemical simulation…”
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4
Charge Transport Mechanism in a PECVD Deposited Low-k SiOCH Dielectric
Published in Journal of electronic materials (01-05-2022)“…One of the most important issues during the selection of low- k dielectrics is related to their intrinsic properties including their electric breakdown and…”
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5
Optical Properties of TiO2 Films Deposited by Reactive Electron Beam Sputtering
Published in Journal of electronic materials (01-10-2017)“…Titanium dioxide (anatase, a-TiO 2 ) films have been prepared by electron beam sputtering of a TiO 2 target in reactive atmosphere and their structural,…”
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6
Charge transport in amorphous Hf0.5Zr0.5O2
Published in Applied physics letters (09-03-2015)“…In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5Zr0.5O2 is phonon-assisted tunneling…”
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Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma
Published in JETP letters (2022)“…It is shown that the treatment of stoichiometric HfO 2 , which is synthesized by atomic layer deposition, in electron cyclotron resonance hydrogen plasma leads…”
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8
Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation
Published in Microelectronic engineering (15-08-2019)“…In this study, we investigate the role of oxygen vacancies for the orthorhombic noncentrosymmetric Pbc21 Hf0.5Zr0.5O2 stabilization by means of ab initio…”
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Atomic and Electronic Structures of Intrinsic Defects in Ta2O5: Ab Initio Simulation
Published in JETP letters (01-06-2018)“…The atomic and electronic structure of intrinsic point defects in orthorhombic tantalum oxide has been studied by numerical simulation within the density…”
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10
Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition
Published in JETP letters (2019)“…Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been…”
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Electronic Structure of Oxygen Vacancies in the Orthorhombic Noncentrosymmetric Phase Hf0.5Zr0.5O2
Published in JETP letters (2018)“…The electronic structure of stoichiometric and oxygen-depleted Hf 0.5 Zr 0.5 O 2 in the orthorhombic noncentrosymmetric phase has been studied by X-ray…”
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12
Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma
Published in Journal of experimental and theoretical physics (01-12-2020)“…The silicon oxide thin films obtained by thermal SiO 2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated…”
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13
Atomic and electronic structures of the native defects responsible for the resistive effect in HfO2: ab initio simulations
Published in Microelectronic engineering (15-08-2019)“…The oxygen vacancy, interstitial oxygen and hafnium, hafnium substituting oxygen and oxygen Frenkel pair in HfO2 are the probable defects which are able to…”
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14
Electronic structure of oxygen vacancies in hafnium oxide
Published in Microelectronic engineering (01-09-2013)“…[Display omitted] •We calculate XPS and absorption spectra for crystalline HfO2 in frame of hybrid DFT.•We got the experimental XPS for bombarding with Ar-ions…”
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15
Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation
Published in Thin solid films (29-07-2011)“…Broad photoluminescence (PL) band at 2.97eV excited in the band near 6.0eV in amorphous chemical vapor deposition films is related to the neutral oxygen…”
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16
Optical Properties of (ZrO2)1 – x(Y2O3)х (х = 0–0.037) Crystals Grown by Directional Crystallization of the Melt
Published in Optics and spectroscopy (01-12-2020)“…The luminescent and optical properties of materials based on zirconium(IV) oxide grown by crystallization of ZrO 2 melts with 0, 2.0, 2.5, 2.8, and 3.7 mol %…”
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Nanosized Potential Fluctuations in SiOx Synthesized by Plasma-Enhanced Chemical Vapor Deposition
Published in Physics of the solid state (01-12-2019)“…This work was devoted to studying the atomic structure and electron spectrum of a -SiO x : H films created on silicon and glass substrates by means of…”
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18
Electronic Structure of Noncentrosymmetric α‑GeO2 with Oxygen Vacancy: Ab Initio Calculations and Comparison with Experiment
Published in Journal of physical chemistry. C (20-02-2014)“…Polycrystalline α-GeO2, space group P3221, has been prepared by low-temperature chemical synthesis. α-GeO2 electronic structure has been evaluated…”
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19
Optical Properties of the SiOx (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide
Published in Optics and spectroscopy (01-10-2020)“…The optical properties and composition of thermal silicon oxide thin films processed in a hydrogen electron cyclotron resonance plasma have been studied by…”
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Atomic and electronic structures of lutetium oxide Lu2O3
Published in Journal of experimental and theoretical physics (01-02-2013)“…The chemical composition, electronic structure, structure, and physical properties a lutetium oxide Lu 2 O 3 film are studied by X-ray photoelectron…”
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