Search Results - "Peretti, Jacques"
-
1
Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop
Published in Physical review letters (25-04-2013)“…We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light-emitting diode under electrical…”
Get full text
Journal Article -
2
-
3
Polarized Luminescence of Anisotropic LaPO4:Eu Nanocrystal Polymorphs
Published in Journal of the American Chemical Society (01-08-2018)“…Lanthanide elements exhibit highly appealing spectroscopic properties that are extensively used for phosphor applications. Their luminescence contains precise…”
Get full text
Journal Article -
4
The efficiency challenge of nitride light-emitting diodes for lighting
Published in Physica status solidi. A, Applications and materials science (01-05-2015)“…We discuss the challenges of light‐emitting diodes in view of their application to solid‐state lighting. The requirement is to at least displace the quite…”
Get full text
Journal Article -
5
Monitoring the orientation of rare-earth-doped nanorods for flow shear tomography
Published in Nature nanotechnology (01-09-2017)“…Rare-earth phosphors exhibit unique luminescence polarization features originating from the anisotropic symmetry of the emitter ion's chemical environment…”
Get full text
Journal Article -
6
Light‐tunable optical cell manipulation via photoactive azobenzene‐containing thin film bio‐substrate
Published in Nano select (01-09-2022)“…Live real‐time study of the local and collective cellular biomechanical responses requires the fine and selective manipulation of the cellular environment. One…”
Get full text
Journal Article -
7
Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
Published in Physical review. B, Condensed matter and materials physics (23-06-2014)“…The position of the first satellite valley in wurtzite GaN is directly determined by near-band-gap photoemission spectroscopy of p-doped GaN activated to…”
Get full text
Journal Article -
8
Correction to “Surface Plasmon-Enhanced Fluorescence Spectroscopy on Silver Based SPR Substrates”
Published in Journal of physical chemistry. C (06-06-2024)Get full text
Journal Article -
9
Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe
Published in Proceedings of the National Academy of Sciences - PNAS (08-09-2020)“…Two-dimensional electron gases (2DEGs) are at the base of current nanoelectronics because of their exceptional mobilities. Often the accumulation layer forms…”
Get full text
Journal Article -
10
Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)
Published in Applied physics letters (22-05-2023)“…Electron emission spectroscopy was performed on metalorganic chemical vapor deposition grown p-n−-n+ junctions with p-thicknesses ranging from 50 to 300 nm,…”
Get full text
Journal Article -
11
Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs
Published in Applied physics letters (02-08-2021)“…Using electron emission spectroscopy, measurement and analysis were conducted on the energy distribution of vacuum emitted electrons from an electrically…”
Get full text
Journal Article -
12
Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
Published in Applied physics letters (02-03-2020)“…We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by…”
Get full text
Journal Article -
13
Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)
Published in Applied physics letters (17-07-2023)“…We report on the measurement of the lateral distribution of the junction current of an electrical biased p-n GaN diode by electron emission microscopy using a…”
Get full text
Journal Article -
14
Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces
Published in physica status solidi (b) (01-05-2023)“…Article number 2200356 by Alistair C. H. Rowe and co‐workers presents results obtained using a novel experimental approach, scanning tunneling luminescence…”
Get full text
Journal Article -
15
A Systematic Study of Spin‐Dependent Recombination in GaAs 1− x N x as a Function of Nitrogen Content
Published in physica status solidi (b) (01-05-2023)Get full text
Journal Article -
16
Optically Anisotropic Thin Films by Shear-Oriented Assembly of Colloidal Nanorods
Published in Advanced materials (Weinheim) (25-06-2013)“…Device‐scale thin films of highly oriented (in‐plane) colloidal nanorods are made available by using a simple coating process involving thixotropic rod gel…”
Get full text
Journal Article -
17
Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
Published in Applied physics letters (02-03-2020)“…We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by…”
Get full text
Journal Article -
18
Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds
Published in Physical review letters (18-11-2022)“…Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The…”
Get full text
Journal Article -
19
Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces
Published in physica status solidi (b) (01-05-2023)“…Scanning tunneling luminescence microscopy (STLM) and scanning tunneling spectroscopy (STS) are used to study step‐bunched, oxidized 4H‐SiC surfaces prepared…”
Get full text
Journal Article -
20
Origin of electrons emitted into vacuum from InGaN light emitting diodes
Published in Applied physics letters (04-08-2014)“…The mechanism responsible for efficiency droop in InGaN light-emitting diodes (LEDs) has long been elusive due to indirect measurement techniques used for its…”
Get full text
Journal Article