Search Results - "Pengchan, Weera"

The Influence of Gate Scaling to Electrical Characteristics on n-MOS FinFET by Patchrasardtra, Nuttapong, Pengchan, Weera

“…This paper investigates effects from gate scaling in Tri-gate FinFET structure by simulation method, to avoid problems and improve a structure to be good…”
Get full text

Three-Phase Oscillator with Cascade Ability Using Voltage Current Conveyor by Buakaew, Seangrawee, Narksarp, Wipavan, Choeysombat, Kamonthip, Kanjanawiwin, Juthamas, Atiwongsangthong, Narin, Pengchan, Weera

“…This paper presents a new circuit configuration employing voltage current conveyors (VCII) in conjunction with a minimal number of passive elements to achieve…”
Get full text

The local generation and recombination lifetime based on forward diode characteristics diagnostics by Pengchan, Weera, Phetchakul, Toempong, Poyai, Amporn

“…This paper is proposed to extract the local carrier generation and recombination lifetime from forward characteristics of diode. The different geometry p–n…”
Get full text

The defects analysis in CMOS fabrication by arrhenius activation energy technique by Pengchan, W., Phetchakul, T., Poyai, A.

“…Low power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n…”
Get full text

Implantation-induced defects analysis base on activation energy diagnostics by Pengchan, W., Phetchakul, T., Poyai, A.

“…Low power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n…”
Get full text

Effect of Base Width and Implantation Dose on Performance of 3-Terminal Magnetotransistor by Woradet, J., Phetchakul, T., Chareankid, S., Pengchan, W., Klunngien, N., Hruanun, C., Poyai, A.

“…This paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (FL) from…”
Get full text