Search Results - "Pengchan, W."

Yield analysis by poisson yield model based on the defect analysis with derivative method by Praepattharapisut, W., Pengchan, W., Phetchakul, T., Poyai, A.

“…This paper presented the corresponding between the classical Poisson's yield equation prediction and wafer actual yield on the silicon wafer with 0.8 μm CMOS…”
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The new design for magnetoresistance effect on Hall plate structure by Phetchakul, T., Taisettavatkul, P., Pengchan, W., Yamwong, W., Poyai, A.

“…This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD…”
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Study on temperature effect on p-n and zener junction for PTAT temperature sensor by Songmalai, P., Phetchakul, T., Pengchan, W., Ratanaudomphisut, E., Supadech, J.

“…Research on a new compact BJT PTAT temperature sensor structure has been reported. The zener junction-connected BJT transistor and Base-Emitter voltage of…”
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The defects analysis in CMOS fabrication by arrhenius activation energy technique by Pengchan, W., Phetchakul, T., Poyai, A.

“…Low power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n…”
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Implantation-induced defects analysis base on activation energy diagnostics by Pengchan, W., Phetchakul, T., Poyai, A.

“…Low power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n…”
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Effect of Base Width and Implantation Dose on Performance of 3-Terminal Magnetotransistor by Woradet, J., Phetchakul, T., Chareankid, S., Pengchan, W., Klunngien, N., Hruanun, C., Poyai, A.

“…This paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (FL) from…”
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