Device design considerations of a novel high voltage amorphous silicon thin film transistor

The performance of a novel high voltage thin film transistor has been characterized in terms of its geometry and operating conditions. Excellent performance, suitable for large-area electronic application, is achieved for optimized designs. An analytical model is found to fit the performance well.

Bibliographic Details

Published in:	1987 International Electron Devices Meeting pp. 440 - 443
Main Authors:	Martin, R.A., Peng Kein Yap, Hack, M., Hsing Tuan
Format:	Conference Proceeding
Language:	English
Published:	IRE 1987
Subjects:	Amorphous silicon Dielectric substrates Electrodes Etching Geometry Insulation Liquid crystal displays Low voltage MOSFETs Thin film transistors
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!