Search Results - "Peng, Mingzeng"

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  1. 1

    Lattice Strain Induced Remarkable Enhancement in Piezoelectric Performance of ZnO-Based Flexible Nanogenerators by Zhang, Yang, Liu, Caihong, Liu, Jingbin, Xiong, Jie, Liu, Jingyu, Zhang, Ke, Liu, Yudong, Peng, Mingzeng, Yu, Aifang, Zhang, Aihua, Zhang, Yan, Wang, Zhiwei, Zhai, Junyi, Wang, Zhong Lin

    Published in ACS applied materials & interfaces (20-01-2016)
    “…In this work, by employing halogen elements (fluorine, chlorine, bromine, and iodine) as dopant we demonstrate a unique strategy to enhance the output…”
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  2. 2

    High-Resolution Dynamic Pressure Sensor Array Based on Piezo-phototronic Effect Tuned Photoluminescence Imaging by Peng, Mingzeng, Li, Zhou, Liu, Caihong, Zheng, Qiang, Shi, Xieqing, Song, Ming, Zhang, Yang, Du, Shiyu, Zhai, Junyi, Wang, Zhong Lin

    Published in ACS nano (24-03-2015)
    “…A high-resolution dynamic tactile/pressure display is indispensable to the comprehensive perception of force/mechanical stimulations such as electronic skin,…”
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  3. 3

    Graphene-assisted low temperature growth of nearly single-crystalline GaN thin films via plasma-enhanced atomic layer deposition by He, Yingfeng, Song, Yimeng, Wei, Huiyun, Qiu, Peng, Liu, Heng, Zhu, Xiaoli, Tian, Feng, Peng, Mingzeng, Zheng, Xinhe

    Published in Applied physics letters (23-01-2023)
    “…Direct growth of gallium nitride (GaN) thin films is performed using plasma-enhanced atomic layer deposition (PEALD) at 300 °C on a sapphire with a graphene…”
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  4. 4

    Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films by Liu, Sanjie, Zhao, Gang, He, Yingfeng, Li, Yangfeng, Wei, Huiyun, Qiu, Peng, Wang, Xinyi, Wang, Xixi, Cheng, Jiadong, Peng, Mingzeng, Zaera, Francisco, Zheng, Xinhe

    Published in Applied physics letters (26-05-2020)
    “…The growth of high-quality epitaxial gallium nitride (GaN) thin films is achieved by using a baking and plasma pretreatment of the substrate prior to the GaN…”
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  5. 5

    Magnetic-Mechanical-Electrical-Optical Coupling Effects in GaN-Based LED/Rare-Earth Terfenol-D Structures by Peng, Mingzeng, Zhang, Yan, Liu, Yudong, Song, Ming, Zhai, Junyi, Wang, Zhong Lin

    Published in Advanced materials (Weinheim) (22-10-2014)
    “…A multi‐field coupling structure is designed and investigated, which combines GaN‐based optoelectronic devices and Terfenol‐D. The abundant coupling effects…”
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  6. 6

    PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity by Liu, Sanjie, Peng, Mingzeng, Hou, Caixia, He, Yingfeng, Li, Meiling, Zheng, Xinhe

    Published in Nanoscale research letters (01-12-2017)
    “…Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD…”
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  7. 7

    Low frequency wideband nano generators for energy harvesting from natural environment by Song, Ming, Zhang, Yan, Peng, Mingzeng, Zhai, Junyi

    Published in Nano energy (01-05-2014)
    “…A low frequency wideband response cantilever nano generator (NG) was designed for energy harvesting from ambient vibration in natural environment. The textured…”
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  8. 8

    Polarization Modulation on Charge Transfer and Band Structures of GaN/MoS2 Polar Heterojunctions by Tian, Feng, Kong, Delin, Qiu, Peng, Liu, Heng, Zhu, Xiaoli, Wei, Huiyun, Song, Yimeng, Chen, Hong, Zheng, Xinhe, Peng, Mingzeng

    Published in Crystals (Basel) (01-04-2023)
    “…As important third-generation semiconductors, wurtzite III nitrides have strong spontaneous and piezoelectric polarization effects. They can be used to…”
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  9. 9

    Magnetic-induced PL modulation of InGaN/GaN MQWs by a CoFeB ferromagnetic cap layer by Peng, Mingzeng, Zheng, Xinhe, He, Yingfeng, Wei, Huiyun, An, Yunlai, Song, Yimeng, Qiu, Peng

    Published in Japanese Journal of Applied Physics (01-06-2019)
    “…III-nitride semiconductors show wide applications in general illumination, displays, visible-light communication, power electronics and so on. Until recently,…”
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  10. 10

    Metallic indium segregation control of InN thin films grown on Si(1 0 0) by plasma-enhanced atomic layer deposition by An, Yunlai, He, Yingfeng, Wei, Huiyun, Liu, Sanjie, Li, Meiling, Song, Yimeng, Qiu, Peng, Rehman, Abdul, Zheng, Xinhe, Peng, Mingzeng

    Published in Results in physics (01-03-2019)
    “…InN thin films were grown on Si(1 0 0) substrates by plasma-enhanced atomic layer deposition (PEALD). In this work, It is found that the island growth of InN…”
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  11. 11
  12. 12

    X-band AlGaN/GaN HEMTs with high microwave power performance by Peng, MingZeng, Zheng, YingKui, Wei, Ke, Chen, XiaoJuan, Liu, XinYu

    “…An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal…”
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  13. 13

    Flexible Self-Powered GaN Ultraviolet Photoswitch with Piezo-Phototronic Effect Enhanced On/Off Ratio by Peng, Mingzeng, Liu, Yudong, Yu, Aifang, Zhang, Yang, Liu, Caihong, Liu, Jingyu, Wu, Wei, Zhang, Ke, Shi, Xieqing, Kou, Jinzong, Zhai, Junyi, Wang, Zhong Lin

    Published in ACS nano (26-01-2016)
    “…Flexible self-powered sensing is urgently needed for wearable, portable, sustainable, maintenance-free and long-term applications. Here, we developed a…”
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  14. 14

    Improvement in the Piezoelectric Performance of a ZnO Nanogenerator by a Combination of Chemical Doping and Interfacial Modification by Liu, Caihong, Yu, Aifang, Peng, Mingzeng, Song, Ming, Liu, Wei, Zhang, Yang, Zhai, Junyi

    Published in Journal of physical chemistry. C (07-04-2016)
    “…In this work, we investigate the improvement in the piezoelectric performance of a ZnO nanowire film by a chemical doping and interfacial modification…”
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  15. 15

    Interface engineering on p-CuI/n-ZnO heterojunction for enhancing piezoelectric and piezo-phototronic performance by Liu, Caihong, Peng, Mingzeng, Yu, Aifang, Liu, Jingyu, Song, Ming, Zhang, Yang, Zhai, Junyi

    Published in Nano energy (01-08-2016)
    “…The enhanced piezoelectric and piezo-phototronic performance of ZnO-based thin film devices has been achieved by interface engineering. The piezoelectric…”
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  16. 16

    Improving quality of AlN films on GaAs substrate via in-situ plasma pre-treatment in plasma enhanced atomic layer deposition by Qiu, Hongyu, Yang, Jin, Qiu, Peng, Zhu, Xiaoli, Liu, Heng, Wei, Huiyun, Peng, Mingzeng, Zheng, Xinhe

    Published in Materials letters (15-07-2024)
    “…•High-quality AlN films were grown on GaAs substrates at 275 °C using in-situ plasma pre-treatment with PEALD.•Following in-situ plasma pre-treatment, the…”
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  17. 17

    High-quality GaN grown on stainless steel substrate with Al2O3 buffer via plasma-enhanced atomic layer deposition by He, Yingfeng, Si, Zhengying, Shi, Yu'ang, Wei, Huiyun, Peng, Mingzeng, Zheng, Xinhe

    Published in Materials letters (01-11-2023)
    “…[Display omitted] •GaN thin films were grown on stainless steel substrate with T-ALD Al2O3 buffer by PEALD at 290 ℃.•It is found that the surface morphology of…”
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  18. 18

    Challenges and strategies of all-inorganic lead-free halide perovskite solar cells by Wei, Huiyun, Qiu, Peng, Li, Ye, He, Yingfeng, Peng, Mingzeng, Zheng, Xinhe, Liu, Xiaohu

    Published in Ceramics international (01-03-2022)
    “…Hybrid lead halide perovskite solar cells (PSCs) have experienced a rapid development in the past decade and a certified efficiency up to 25.5% has been…”
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  19. 19

    The insertion of the ALD diffusion barriers: An approach to improve the quality of the GaN deposited on Kapton by PEALD by He, Yingfeng, Li, Meiling, Wei, Huiyun, Song, Yimeng, Qiu, Peng, Peng, Mingzeng, Zheng, Xinhe

    Published in Applied surface science (15-11-2021)
    “…[Display omitted] •Back diffusion of GaN into Kapton substrate was found when the deposition temperature is above 250 °C.•The insertion of ALD Al2O3 and AlN…”
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  20. 20

    Ni-pattern guided GaN nanowire-array humidity sensor with high sensitivity enhanced by UV photoexcitation by Peng, Mingzeng, Zheng, Xinhe, Ma, Ziguang, Chen, Hong, Liu, Sanjie, He, Yingfeng, Li, Meiling

    Published in Sensors and actuators. B, Chemical (01-03-2018)
    “…•We have proposed a simple Ni-pattern guided lateral growth method to fabricate selective-area GaN nanowire array.•Ni metal has formed contamination-free and…”
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