Search Results - "Peng, Mingzeng"
-
1
Lattice Strain Induced Remarkable Enhancement in Piezoelectric Performance of ZnO-Based Flexible Nanogenerators
Published in ACS applied materials & interfaces (20-01-2016)“…In this work, by employing halogen elements (fluorine, chlorine, bromine, and iodine) as dopant we demonstrate a unique strategy to enhance the output…”
Get full text
Journal Article -
2
High-Resolution Dynamic Pressure Sensor Array Based on Piezo-phototronic Effect Tuned Photoluminescence Imaging
Published in ACS nano (24-03-2015)“…A high-resolution dynamic tactile/pressure display is indispensable to the comprehensive perception of force/mechanical stimulations such as electronic skin,…”
Get full text
Journal Article -
3
Graphene-assisted low temperature growth of nearly single-crystalline GaN thin films via plasma-enhanced atomic layer deposition
Published in Applied physics letters (23-01-2023)“…Direct growth of gallium nitride (GaN) thin films is performed using plasma-enhanced atomic layer deposition (PEALD) at 300 °C on a sapphire with a graphene…”
Get full text
Journal Article -
4
Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
Published in Applied physics letters (26-05-2020)“…The growth of high-quality epitaxial gallium nitride (GaN) thin films is achieved by using a baking and plasma pretreatment of the substrate prior to the GaN…”
Get full text
Journal Article -
5
Magnetic-Mechanical-Electrical-Optical Coupling Effects in GaN-Based LED/Rare-Earth Terfenol-D Structures
Published in Advanced materials (Weinheim) (22-10-2014)“…A multi‐field coupling structure is designed and investigated, which combines GaN‐based optoelectronic devices and Terfenol‐D. The abundant coupling effects…”
Get full text
Journal Article -
6
PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity
Published in Nanoscale research letters (01-12-2017)“…Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD…”
Get full text
Journal Article -
7
Low frequency wideband nano generators for energy harvesting from natural environment
Published in Nano energy (01-05-2014)“…A low frequency wideband response cantilever nano generator (NG) was designed for energy harvesting from ambient vibration in natural environment. The textured…”
Get full text
Journal Article -
8
Polarization Modulation on Charge Transfer and Band Structures of GaN/MoS2 Polar Heterojunctions
Published in Crystals (Basel) (01-04-2023)“…As important third-generation semiconductors, wurtzite III nitrides have strong spontaneous and piezoelectric polarization effects. They can be used to…”
Get full text
Journal Article -
9
Magnetic-induced PL modulation of InGaN/GaN MQWs by a CoFeB ferromagnetic cap layer
Published in Japanese Journal of Applied Physics (01-06-2019)“…III-nitride semiconductors show wide applications in general illumination, displays, visible-light communication, power electronics and so on. Until recently,…”
Get full text
Journal Article -
10
Metallic indium segregation control of InN thin films grown on Si(1 0 0) by plasma-enhanced atomic layer deposition
Published in Results in physics (01-03-2019)“…InN thin films were grown on Si(1 0 0) substrates by plasma-enhanced atomic layer deposition (PEALD). In this work, It is found that the island growth of InN…”
Get full text
Journal Article -
11
Electric-field driven photoluminescence probe of photoelectric conversion in InGaN-based photovoltaics
Published in Optics express (09-07-2018)Get full text
Journal Article -
12
X-band AlGaN/GaN HEMTs with high microwave power performance
Published in Science China. Physics, mechanics & astronomy (01-03-2011)“…An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal…”
Get full text
Journal Article -
13
Flexible Self-Powered GaN Ultraviolet Photoswitch with Piezo-Phototronic Effect Enhanced On/Off Ratio
Published in ACS nano (26-01-2016)“…Flexible self-powered sensing is urgently needed for wearable, portable, sustainable, maintenance-free and long-term applications. Here, we developed a…”
Get full text
Journal Article -
14
Improvement in the Piezoelectric Performance of a ZnO Nanogenerator by a Combination of Chemical Doping and Interfacial Modification
Published in Journal of physical chemistry. C (07-04-2016)“…In this work, we investigate the improvement in the piezoelectric performance of a ZnO nanowire film by a chemical doping and interfacial modification…”
Get full text
Journal Article -
15
Interface engineering on p-CuI/n-ZnO heterojunction for enhancing piezoelectric and piezo-phototronic performance
Published in Nano energy (01-08-2016)“…The enhanced piezoelectric and piezo-phototronic performance of ZnO-based thin film devices has been achieved by interface engineering. The piezoelectric…”
Get full text
Journal Article -
16
Improving quality of AlN films on GaAs substrate via in-situ plasma pre-treatment in plasma enhanced atomic layer deposition
Published in Materials letters (15-07-2024)“…•High-quality AlN films were grown on GaAs substrates at 275 °C using in-situ plasma pre-treatment with PEALD.•Following in-situ plasma pre-treatment, the…”
Get full text
Journal Article -
17
High-quality GaN grown on stainless steel substrate with Al2O3 buffer via plasma-enhanced atomic layer deposition
Published in Materials letters (01-11-2023)“…[Display omitted] •GaN thin films were grown on stainless steel substrate with T-ALD Al2O3 buffer by PEALD at 290 ℃.•It is found that the surface morphology of…”
Get full text
Journal Article -
18
Challenges and strategies of all-inorganic lead-free halide perovskite solar cells
Published in Ceramics international (01-03-2022)“…Hybrid lead halide perovskite solar cells (PSCs) have experienced a rapid development in the past decade and a certified efficiency up to 25.5% has been…”
Get full text
Journal Article -
19
The insertion of the ALD diffusion barriers: An approach to improve the quality of the GaN deposited on Kapton by PEALD
Published in Applied surface science (15-11-2021)“…[Display omitted] •Back diffusion of GaN into Kapton substrate was found when the deposition temperature is above 250 °C.•The insertion of ALD Al2O3 and AlN…”
Get full text
Journal Article -
20
Ni-pattern guided GaN nanowire-array humidity sensor with high sensitivity enhanced by UV photoexcitation
Published in Sensors and actuators. B, Chemical (01-03-2018)“…•We have proposed a simple Ni-pattern guided lateral growth method to fabricate selective-area GaN nanowire array.•Ni metal has formed contamination-free and…”
Get full text
Journal Article