Search Results - "Pelissier, Bernard"

Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors by Legallais, Maxime, Lefevre, Gauthier, Martin, Simon, Labau, Sébastien, Bassani, Franck, Pélissier, Bernard, Baron, Thierry, Vauche, Laura, Le Royer, Cyrille, Charles, Matthew, Vandendaele, William, Plissonnier, Marc, Gwoziecki, Romain, Salem, Bassem

“…In this article, the role of the substrate biasing during the passivation of GaN with AlN deposited by plasma enhanced atomic layer deposition (PEALD) is…”
Get full text

200 mm-scale growth of 2D layered GaSe with preferential orientation by Martin, Mickaël, Pochet, Pascal, Okuno, Hanako, Alvarez, Carlos, Bellet-Amalric, Edith, Hauchecorne, Pauline, Levert, Théo, Pelissier, Bernard, Borowik, Łukasz, Bassani, Franck, David, Sylvain, Moeyaert, Jeremy, Baron, Thierry

“…In this article, we present a fab-compatible metal–organic chemical vapor deposition growth process, realized in a hydrogen ambience, of two-dimensional (2D)…”
Get full text

Generation of fertile transplastomic soybean by Dufourmantel, N, Pelissier, B, Garcon, F, Peltier, G, Ferullo, J.M, Tissot, G

“…We describe here the development of a plastid transformation method for soybean, a leguminous plant of major agronomic interest. Chloroplasts from embryogenic…”
Get full text

Generation and characterization of soybean and marker-free tobacco plastid transformants over-expressing a bacterial 4-hydroxyphenylpyruvate dioxygenase which provides strong herbicide tolerance by Dufourmantel, Nathalie, Dubald, Manuel, Matringe, Michel, Canard, Hélène, Garcon, Frédéric, Job, Claudette, Kay, Elisabeth, Wisniewski, Jean-Pierre, Ferullo, Jean-Marc, Pelissier, Bernard, Sailland, Alain, Tissot, Ghislaine

“…Plant 4-hydroxyphenylpyruvate dioxygenase (HPPD) is part of the biosynthetic pathway leading to plastoquinone and vitamin E. This enzyme is also the molecular…”
Get more information

p-Hydroxyphenylpyruvate dioxygenase inhibitor-resistant plants by Matringe, Michel, Sailland, Alain, Pelissier, Bernard, Rolland, Anne, Zink, Olivier

“…The enzyme p‐hydroxyphenylpyruvate dioxygenase (HPPD) catalyzes the formation of homogentisic acid, the aromatic precursor of plastoquinone and vitamin E. HPPD…”
Get full text

H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces by Benrabah, Sabria, Legallais, Maxime, Besson, Pascal, Ruel, Simon, Vauche, Laura, Pelissier, Bernard, Thieuleux, Chloé, Salem, Bassem, Charles, Matthew

“…[Display omitted] •Phosphoric acid induces significant changes on GaN surface chemistry and morphology.•Phosphoric acid can recover damaged dry-etched GaN…”
Get full text

Area selective deposition of TiO 2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme by Vallat, Rémi, Gassilloud, Rémy, Salicio, Olivier, El Hajjam, Khalil, Molas, Gabriel, Pelissier, Bernard, Vallée, Christophe

“…A selective deposition process for bottom-up approach was developed in a modified plasma enhanced atomic layer deposition (PEALD) sequence. As a case study, a…”
Get full text

Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing by Legallais, Maxime, Mehdi, Hussein, David, Sylvain, Bassani, Franck, Labau, Sébastien, Pelissier, Bernard, Baron, Thierry, Martinez, Eugenie, Ghibaudo, Gérard, Salem, Bassem

“…In recent years, plasma enhanced atomic layer deposition (PEALD) has emerged as a key method for the growth of conformal and homogeneous aluminum nitride (AlN)…”
Get full text

Renewable Lignin-Derived Graphene-like/PVDF Nanocomposites with High Dielectric Constant and Low Loss Tangent by Meeporn, Keerati, Morvezen, Gwenn, de Vecchy, Jon, Mareau, Vincent H., Wanmolee, Wanwitoo, Butburee, Teera, Pelissier, Bernard, Sylvestre, Alain

“…Dielectric materials with high dielectric constant, low loss tangent, and lower cost need to be developed, given the growing demand for advanced electronic…”
Get full text

Spectroscopic investigation of oxidation in GaSe 2D layered materials by Smiri, Badreddine, Bernardin, Rémy, Martin, Mickael, Roussel, Hervé, Deschanvres, Jean Luc, Nolot, Emmanuel, Rochat, Névine, Bassani, Franck, Baron, Thierry, Pelissier, Bernard

“…GaSe, a two-dimensional layered metal monochalcogenide, has recently attracted growing interest due to its unique electronic properties and potential…”
Get full text

H$_3$PO$_4$-based wet chemical etching for recovery of dry-etched GaN surfaces by Benrabah, Sabria, Legallais, Maxime, Besson, Pascal, Ruel, Simon, Vauche, Laura, Pelissier, Bernard, Thieuleux, Chloé, Salem, Bassem, Charles, Matthew

“…The impact of several wet etchants commonly encountered in the microelectronic industry on the surface chemistry of GaN on silicon was explored. In order to…”
Get full text

Hybridization of ellipsometry and energy loss spectra from XPS for bandgap and optical constants determination in SiON thin films by Resende, Joao, Fuard, David, Le Cunff, Delphine, Tortai, Jean-Herve, Pelissier, Bernard

“…In this study, we first compare the bandgap determination methods in SiON thin films using two established techniques: Ellipsometry and the Energy Loss…”
Get full text

Chemical Bath Deposition of ZnO Nanowires Using Copper Nitrate as an Additive for Compensating Doping by Lausecker, Clément, Salem, Bassem, Baillin, Xavier, Chaix-Pluchery, Odette, Roussel, Hervé, Labau, Sébastien, Pelissier, Bernard, Appert, Estelle, Consonni, Vincent

“…The controlled incorporation of dopants like copper into ZnO nanowires (NWs) grown by chemical bath deposition (CBD) is still challenging despite its critical…”
Get full text

Hybridization of ellipsometry and Xps energy loss: robust band gap and broadband optical constants determination of SiGe, HfON and MoOx thin films by Levert, Théo, Zakhtser, Alter, Duval, Julien, Raguenez, Chloé, Verdier, Stéphane, Le Cunff, Delphine, Tortai, Jean-Hervé, Pelissier, Bernard

“…In this study, we compare the robustness of optical constants and optical band gap determination of three different materials: SiGe, N-doped HfO$_2$ and…”
Get full text

Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme by Vallat, Rémi, Gassilloud, Rémy, Salicio, Olivier, El Hajjam, Khalil, Molas, Gabriel, Pelissier, Bernard, Vallée, Christophe

“…A selective deposition process for bottom-up approach was developed in a modified plasma enhanced atomic layer deposition (PEALD) sequence. As a case study, a…”
Get full text

Surface oxidation phenomena in Ge-rich GeSbTe alloys and N doping influence for Phase-Change Memory applications by Goffart, Ludovic, Pelissier, Bernard, Lefèvre, Gauthier, Le–Friec, Yannick, Vallée, Christophe, Navarro, Gabriele, Reynard, Jean–Philippe

“…[Display omitted] •Double oxidation kinetic has been observed for the first time in Ge-rich GeSbTe alloys.•Higher N contents leads to higher oxidation rate in…”
Get full text

Hybridization of ellipsometry and XPS energy loss: Robust band gap and broadband optical constants determination of SiGe, HfON and MoOx thin films by Levert, Théo, Zakhtser, Alter, Duval, Julien, Raguenez, Chloé, Verdier, Stéphane, Le Cunff, Delphine, Tortai, Jean-Hervé, Pelissier, Bernard

“…Efficiently passivating germanium (Ge) surfaces is crucial to reduce the unwanted recombination current in high-performance devices. Chemical surface cleaning…”
Get full text

Effect of explant orientation, pH, solidifying agent and wounding on initiation of soybean somatic embryos by Santarem, E.R. (Universidade Federal do Rio Grande do Sul, Porto Alegre, RS, Brazil.), Pelissier, B, Finer, J.J

“…Several methods have been developed to obtain somatic embryos of soybean. We report here a new procedure that results in high frequency somatic embryo…”
Get full text

Plastid transformation in soybean by Dubald, Manuel, Tissot, Ghislaine, Pelissier, Bernard

“…The biotechnological potential of plastid genetic engineering has been illustrated in a limited number of higher plant species. We have developed a…”
Get more information

Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode by Mehdi, H., Réveret, F., Robert-Goumet, C., Bideux, L., Gruzza, B., Hoggan, P.E., Leymarie, J., Andre, Y., Gil, E., Pelissier, B., Levert, T., Paget, D., Monier, G.

“…[Display omitted] •Effective chemical passivation of GaAs surface is got with nitridation at 500 °C.•Nitriding GaAs at 500 °C gives the optimal electrical…”
Get full text