Search Results - "Pejović, Milić M."
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1
P-channel MOSFET as ionizing radiation detector
Published in Applied radiation and isotopes (01-06-2023)“…In this study, the authors examine the responses of radiation-sensitive p-channel MOSFETs to irradiation and subsequent annealing at room temperature and…”
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2
Xenon-filled diode performance under influence of low doses of gamma radiation
Published in Applied radiation and isotopes (01-06-2022)“…This paper presents a detailed statistical analysis of experimental results of dynamic breakdown voltage and electrical breakdown time delay for xenon-filled…”
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3
VDMOSFET as a prospective dosimeter for radiotherapy
Published in Applied radiation and isotopes (01-02-2018)“…Performance of a commercial p-channel power vertical-double-diffusion metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as a γ-radiation…”
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4
Physico-Chemical Processes Induced by Electrical Breakdown and Discharge Responsible for Memory Effect in Krypton with < 10 ppm Nitrogen
Published in Plasma chemistry and plasma processing (01-03-2018)“…In order to analyze the processes induced by electrical breakdown and discharge responsible for memory effect in krypton-filled tube at low pressure,…”
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5
The Influence of the Magnetic Field on DC and the Impulse Breakdown of Noble Gases
Published in Materials (05-03-2019)“…Increased electromagnetic contamination of the environment accompanied with the amplified miniaturization of electronic components underline the issue of the…”
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6
The possibility for gamma and UV radiation detection based on electrical breakdown time delay measurement in krypton and xenon filled diodes
Published in Nuclear technology & radiation protection (01-01-2021)“…The paper presents results of electrical breakdown time delay mean value t?d as a function of relaxation time ? (memory curve) for krypton and xenon-filled…”
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7
Influence of low dose rate gamma radiation on breakdown voltage and electrical breakdown time delay of working gas Geiger-Muller chamber
Published in Vacuum (01-07-2022)“…This paper presents the experimental data on the dynamic breakdown voltage and electrical breakdown time delay of commercial Geiger-Muller chamber manufactured…”
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8
The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET
Published in Nuclear technology & radiation protection (01-01-2018)“…The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100…”
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9
Investigation of the Dielectric Properties of the Insulating Gas of Commercial Gas-Filled Surge Arresters
Published in IEEE transactions on dielectrics and electrical insulation (01-04-2023)“…Based on the experimental results of dynamic breakdown voltage and electrical breakdown time delay, the dielectric properties of insulating gas commercial…”
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10
Successive gamma-ray irradiation and corresponding post-irradiation annealing of pMOS dosimeters
Published in Nuclear Technology and Radiation Protection (01-12-2012)“…The paper investigates a possibility of pMOS dosimeter re-use for the measurement of gamma-ray irradiation. The dosimeters were irradiated to the dose of 35…”
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11
Sensitivity of RADFET for gamma and X-ray doses used in medicine
Published in Nuclear Technology and Radiation Protection (2014)“…In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity…”
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12
Dose response, radiation sensitivity and signal fading of p-channel MOSFETs (RADFETs) irradiated up to 50 Gy with ⁶⁰Co
Published in Applied radiation and isotopes (01-10-2015)“…This paper reports response of p-channel MOSFETs (RADFETs) to (60)Co gamma radiation in the 10-50 Gy dose range and signal fading (room temperature annealing)…”
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13
Small dose effect in RADFET with thick gate oxide
Published in Applied radiation and isotopes (01-10-2019)“…In order to track “small dose effect” leading to stabilization of RADFETs with 1 μm thick oxide fabricated at Tyndall National Institute, Cork, Ireland…”
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14
Electrical breakdown time delay in nitrogen filled tube with small inter electrode gap
Published in IEEE transactions on dielectrics and electrical insulation (01-04-2014)“…The processes which are responsible for breakdown initiation in nitrogen-filled tube at 6.6×10 2 Pa (6.6 mbar) and inter electrode gap 0.1 mm have been…”
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15
Radiation-sensitive field effect transistor response to gamma-ray irradiation
Published in Nuclear Technology and Radiation Protection (01-04-2011)“…The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of…”
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16
Processes in radiation sensitive MOSFETs during irradiation and post irradiation annealing responsible for threshold voltage shift
Published in Radiation physics and chemistry (Oxford, England : 1993) (01-01-2017)“…The behavior of radiation-induced fixed oxide traps and radiation-induced switching traps near and at Si/SiO2 interface during gamma-ray irradiation up to 50Gy…”
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17
Analysis of statistical nature of electrical breakdown time delay in nitrogen at 6.6 mbar pressure in presence of positive ions and N(4S) atoms
Published in Contributions to plasma physics (1988) (01-10-2011)“…On the basis of the mean value of electrical breakdown time delay $ \overline t_d $ and the standard deviation of electrical breakdown time delay σ dependence…”
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18
Dose response, radiation sensitivity and signal fading of p-channel MOSFETs (RADFETs) irradiated up to 50Gy with 60Co
Published in Applied radiation and isotopes (01-10-2015)“…This paper reports response of p-channel MOSFETs (RADFETs) to 60Co gamma radiation in the 10–50Gy dose range and signal fading (room temperature annealing) for…”
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19
The gamma-ray irradiation sensitivity and dosimetric information instability of RADFET dosimeter
Published in Nuclear Technology and Radiation Protection (01-01-2013)“…The gamma-ray irradiation sensitivity to radiation dose range from 0.5 Gy to 5 Gy and post-irradiation annealing at room and elevated temperatures have been…”
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20
Investigation of breakdown voltage and electrical breakdown time delay in air-filled tube in presence of combined gas and vacuum breakdown mechanism
Published in Vacuum (20-07-2012)“…This paper presents the experimental data of breakdown voltage and electrical breakdown time delay for air-filled tube at p = 0.7 mbar pressure. The breakdown…”
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