Search Results - "Peethala, B."

Use of anionic surfactants for selective polishing of silicon dioxide over silicon nitride films using colloidal silica-based slurries by Penta, Naresh K., Amanapu, H.P., Peethala, B.C., Babu, S.V.

“…•Anionic surfactants adsorb on silicon nitride surface but not on silicon dioxide.•These surfactants adsorb as a bilayer on silicon nitride surface.•This…”
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Impact of surface preparation for n-type Si:P and p-type SiGe:B semiconductors on low resistance silicide contacts by Carr, A., Peethala, B., Raymond, M., Adusumilli, P., Kamineni, V., Niu, C., Arceo De La Pena, A., Canaperi, D.F., Siddiqui, S.

“…In our study, we evaluate effective silicon and germanium oxide reduction by two surface treatments to achieve low contact resistivity at the…”
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Role of hydrogen bonding on the adsorption of several amino acids on SiO2 and Si3N4 and selective polishing of these materials using ceria dispersions by Penta, Naresh K., Peethala, B.C., Amanapu, H.P., Melman, A., Babu, S.V.

“…•Protonated amines interact with oxide and nitride surfaces via hydrogen bonding.•This binding is stronger with the nitride surface compared to the oxide…”
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Role of amines and amino acids in enhancing the removal rates of undoped and P-doped polysilicon films during chemical mechanical polishing by Veera Dandu, P.R., Peethala, B.C., Penta, Naresh K., Babu, S.V.

“…During chemical mechanical polishing, removal rates of undoped and P-doped polysilicon films as high as 200 and 250 nm/min, respectively, have been achieved…”
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Novel phosphate-functionalized silica-based dispersions for selectively polishing silicon nitride over silicon dioxide and polysilicon films by Veera Dandu, P.R., Penta, Naresh K., Peethala, B.C., Babu, S.V.

“…Novel phosphate-functionalized silica abrasives were prepared using diethylphosphato-ethyltriethoxysilane (DPTS) as the coupling agent. Possible binding of…”
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Electrochemical investigation of surface reactions for chemically promoted chemical mechanical polishing of TaN in tartaric acid solutions by Janjam, S.V.S.B., Peethala, B.C., Zheng, J.P., Babu, S.V., Roy, D.

“…In this work we use cyclic voltammetry, linear polarization resistance (LPR) measurements and Fourier transform electrochemical impedance spectroscopy (FT-EIS)…”
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Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node by Nogami, T., Zhang, X., Kelly, J., Briggs, B., You, H., Patlolla, R., Huang, H., McLaughlin, P., Lee, J., Shobha, H., Nguyen, S., DeVries, S., Demarest, J., Lian, G., Li, J., Maniscalco, J., Bhosale, P., Lin, X., Peethala, B., Lanzillo, N., Kane, T., Yang, C. C., Motoyama, K., Sil, D., Spooner, T., Canaperi, D., Standaert, T., Lian, S., Grill, A., Edelstein, D., Paruchuri, V.

“…For beyond 7 nm node BEOL, line resistance (R) is assessed among four metallization schemes: Ru; Co; Cu with TaN/Ru barrier, and Cu with through-cobalt…”
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Tungsten and cobalt metallization: A material study for MOL local interconnects by Kamineni, V., Raymond, M., Siddiqui, S., Mont, F., Tsai, S., Niu, C., Labonte, A., Labelle, C., Fan, S., Peethala, B., Adusumilli, P., Patlolla, R., Priyadarshini, D., Mignot, Y., Carr, A., Pancharatnam, S., Shearer, J., Surisetty, C., Arnold, J., Canaperi, D., Haran, B., Jagannathan, H., Chafik, F., L'Herron, B.

“…Middle-of-the-line (MOL) interconnect and contact resistances represent significant impacts to high-end IC performance at ≤ 10 nm nodes. CVD W-based…”
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Metal-induced line width variability challenge and mitigation strategy in advanced post-Cu interconnects by Motoyama, K., Lanzillo, N., Mukesh, S., Peethala, B., Spooner, T., Edelstein, D., Choi, K.

“…This study illustrates that the mechanism of line wiggling (repetitive line CD variability) caused by post-Cu alternative metals deposition can be…”
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Experimental study of nanoscale Co damascene BEOL interconnect structures by Kelly, J., Chen, J. H.-C, Huang, H., Hu, C. K., Liniger, E., Patlolla, R., Peethala, B., Adusumilli, P., Shobha, H., Nogami, T., Spooner, T., Huang, E., Edelstein, D., Canaperi, D., Kamineni, V., Mont, F., Siddiqui, S.

“…We characterize integrated dual damascene Co and Cu BEOL lines and vias, at 10 nm node dimensions. The Co to Cu line resistance ratios for 24 nm and 220 nm…”
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Novel low k Dielectric materials for nano device interconnect technology by Nguyen, Son Van, Shobha, H., Haigh, T., Chen, J., Lee, J., Nogami, T., Liniger, E., Cohen, S., Hu, C. K., Huang, H., Yao, Y., Canaperi, D., Peethala, B., Standaert, T., Bonilla, G.

“…Mechanically robust low k C-rich SiCN and pSiCN dielectrics with excellent built-in Cu oxidation and diffusion barrier have been developed and evaluated as…”
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BEOL process integration for the 7 nm technology node by Standaert, T., Beique, G., Chen, H.-C, Chen, S.-T, Hamieh, B., Lee, J., McLaughlin, P., McMahon, J., Mignot, Y., Mont, F., Motoyama, K., Nguyen, S., Patlolla, R., Peethala, B., Priyadarshini, D., Rizzolo, M., Saulnier, N., Shobha, H., Siddiqui, S., Spooner, T., Tang, H., van der Straten, O., Verduijn, E., Xu, Y., Zhang, X., Arnold, J., Canaperi, D., Colburn, M., Edelstein, D., Paruchuri, V., Bonilla, G.

“…A 36 nm pitch BEOL has been evaluated for the 7 nm technology node. EUV lithography was employed as a single-exposure patterning solution. For the first time,…”
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Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines by Nogami, T., Patlolla, R., Kelly, J., Briggs, B., Huang, H., Demarest, J., Li, J., Hengstebeck, R., Zhang, X., Lian, G., Peethala, B., Bhosale, P., Maniscalco, J., Shobha, H., Nguyen, S., McLaughlin, P., Standaert, T., Canaperi, D., Edelstein, D., Paruchuri, V.

“…Co/Cu composite interconnect systems were studied. Since wide Cu lines require a diffusion barrier which is simultaneously applied also to fine Co lines to…”
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Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits by Penny, C., Gates, S., Peethala, B., Lee, J., Priyadarshini, D., Nguyen, S., McLaughlin, P., Liniger, E., Hu, C.-K, Clevenger, L., Hook, T., Shobha, H., Kerber, P., Seshadri, I., Chen, J., Edelstein, D., Quon, R., Bonilla, G., Paruchuri, V., Huang, E.

“…This paper demonstrates the first reliable and low cost airgap BEOL technology, generated at extremely tight dimensions (48 nm pitch) in Cu/ULK. This provides…”
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Impact of HF-based cleaning solutions on via resistance for sub-10nm BEOL structures by Peethala, B., Mont, F.W., Molis, S., Knarr, R., L'lherron, B., Labelle, C., Canaperi, D., Siddiqui, S.

“…In this work, ultra-dilute HF systems with the addition of functional hydrocarbon as an additive at elevated temperatures were evaluated to remove the post…”
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Future on-chip interconnect metallization and electromigration by Hu, C.-K., Kelly, J., Huang, H., Motoyama, K., Shobha, H., Ostrovski, Y., Chen, J. H-C, Patlolla, R., Peethala, B., Adusumilli, P., Spooner, T., Quon, R., Gignac, L. M., Breslin, C., Lian, G., Ali, M., Benedict, J., Lin, X. S., Smith, S., Kamineni, V., Zhang, X., Mont, F., Siddiqui, S., Baumann, F.

“…Electromigration and resistivity of Cu, Co and Ru on-chip interconnections have been investigated. Non-linered Co and Ru interconnects can have better…”
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Impact of HF-based cleaning solutions on via resistance for sub-10 nm BEOL structures by Peethala, B., Mont, F.W., Molis, S., Knarr, R., L'lherron, B., Labelle, C., Canaperi, D., Siddiqui, S.

“…In this work, ultra-dilute HF systems with the addition of functional hydrocarbon as an additive at elevated temperatures were evaluated to remove the post…”
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Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects by Van Nguyen, Son, Shobha, H., Peethala, C. B., Haigh, T., Huang, H., Li, J., Demarest, J., Haran, B., Hausmann, Dennis, Lemaire, P., Sharma, K., Ramani, P., Mahorowala, A.

“…AlOx was selectively deposited on top of SiCOH in 32 nm pitch Cu-SiCOH pattern to form a Fully Aligned Via (FAV) test structure. Selective deposition process…”
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Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires by Hu, C.-K, Kelly, J., Chen, J. H.-C, Huang, H., Ostrovski, Y., Patlolla, R., Peethala, B., Adusumilli, P., Spooner, T., Gignac, L. M., Bruley, J., Breslin, C., Cohen, S. A., Lian, G., Ali, M., Long, R., Hornicek, G., Kane, T., Kamineni, V., Zhang, X., Mont, F., Siddiqui, S.

“…Electromigration and resistivity of Cu, Co and Ru on-chip interconnection have been investigated. A similar resistivity size effect increase was observed in…”
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Metal Wet Recess Challenges and Solutions for beyond 7nm Fully Aligned Via Integration by Peethala, B., Sil, D., Briggs, B., Rath, D., Lanzillo, N., Matam, K., Shobha, H., Choi, K., Spooner, T., Canaperi, D., Haran, B., Packiam, M., Janes, D., Casey, J., Chang, L., Ryan, K.

“…The Fully aligned via scheme (FAV) is known to mitigate the via misalignment issues that drive a lower Vmax and limits the contact area between the via and the…”
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