Search Results - "Paz, B. Cardoso"

Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures by Serra di Santa Maria, F., Contamin, L., Cardoso Paz, B., Cassé, M., Theodorou, C., Balestra, F., Ghibaudo, G.

“…•Lambert-W function-based MOSFET parameter extraction down to cryogenic temperature.•Lambert-W function-based modeling of drain current MOSFET characteristics…”
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Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance by Casse, M., Paz, B. Cardoso, Ghibaudo, G., Poiroux, T., Barraud, S., Vinet, M., de Franceschi, S., Meunier, T., Gaillard, F.

“…In this article, we have studied the drain current and transconductance of nMOS fully depleted silicon-on-insulator (FDSOI) transistors operating at low…”
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Transport characterization of CMOS-based devices fabricated with isotopically-enriched 28Si for spin qubit applications by Elbaz, G., Casse, M., Labracherie, V., Roussely, G., Bertrand, B., Niebojewski, H., Vinet, M., Balestro, F., Urdampilleta, M., Meunier, T., Paz, B. Cardoso

“…Both from a scalability and integration perspective, CMOS-based qubits hold great potential for quantum computing applications. However, current fabrication…”
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Tunnel and capacitive coupling optimization in FDSOI spin-qubit devices by Bertrand, B., Martinez, B., Li, J., Paz, B. Cardoso, Millory, V., Labracherie, V., Brevard, L., Sahin, H., Roussely, G., Sarrazin, A., Meunier, T., Vinet, M., Niquet, Y.-M., Brun, B., Maurand, R., De Franceschi, S., Niebojewski, H.

“…We present the ongoing development towards a spin qubit platform compatible with an industrial FDSOI CMOS fabrication flow. We introduce new patterning modules…”
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Methodology for an efficient characterization flow of industrial grade Si-based qubit devices by Contamin, L.C., Paz, B. Cardoso, Diaz, B. Martinez, Bertrand, B., Niebojewski, H., Labracherie, V., Sadik, A., Catapano, E., Casse, M., Nowak, E., Niquet, Y.-M., Gaillard, F., Meunier, T., Mortemousque, P.-A., Vinet, M.

“…On-going efforts in scaling-up solid-state spin qubits are hindered by the need for a characterization workflow that assesses the correct device operation at…”
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FDSOI for cryoCMOS electronics: device characterization towards compact model by Casse, M., Paz, B. Cardoso, Bergamaschi, F., Ghibaudo, G., Serra, F., Billiot, G., Jansen, A. G. M., Berlingard, Q., Martinie, S., Bedecarrats, T., Contamin, L., Juge, A., Vincent, E., Galy, P., Pavanello, M.A, Vinet, M., Meunier, T., Gaillard, F.

“…We present a status of FDSOI transistors electrical characterization for very low temperature operation. We highlight in particular singular transport and…”
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Variability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum Computing by Paz, B. Cardoso, Le Guevel, L., Casse, M., Billiot, G., Pillonnet, G., Jansen, A. G. M., Maurand, R., Haendler, S., Juge, A., Vincent, E., Galy, P., Ghibaudo, G., Vinet, M., de Franceschi, S., Meunier, T., Gaillard, F.

“…Variability of28nm FD-SOI transistors is evaluated for the first time down to ultra low temperatures (UL T), at T= 1 00mK. High performance is achieved at UL T…”
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Specificities of linear Si QD arrays integration and characterization by Niebojewski, H., Bertrand, B., Nowak, E., Bedecarrats, T., Paz, B. Cardoso, Contamin, L., Mortemousque, P.A., Labracherie, V., Brevard, L., Sahin, H., Charbonnier, J., Thomas, C., Assous, M., Casse, M., Urdampilleta, M., Niquet, Y.-M., Perruchot, F., Gaillard, F., De Franceschi, S., Meunier, T., Vinet, M.

“…The low temperature operation of quantum computing devices implies developing characterization protocols, from extensive statistical tests to targeted device…”
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A new FDSOI spin qubit platform with 40nm effective control pitch by Bédécarrats, T, Paz, B. Cardoso, Diaz, B. Martinez, Niebojewski, H, Bertrand1, B, Rambal, N, Comboroure, C, Sarrazin, A, Boulard, F, Guyez, E, Hartmann, J. -M, Morand, Y, Magalhaes-Lucas, A, Nowak, E, Catapano, E, Cassé, M, Urdampilleta, M, Niquet, Y. -M, Gaillard, F, De Franceschi, S, Meunier, T, Vinet, M

“…2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 1-4 Operating Si quantum dot (QD) arrays requires homogeneous and…”
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Coupling control in the few-electron regime of quantum dot arrays using 2-metal gate levels in CMOS technology by Paz, B. Cardoso, El-Homsy, V., Niegemann, D. J., Klemt, B., Chanrion, E., Thiney, V., Jadot, B., Mortemousque, P. A., Bertrand, B., Bedecarrats, T., Niebojewski, H., Perruchot, F., De Franceschi, S., Vinet, M., Urdampilleta, M., Meunier, T.

“…Scalability is one of the biggest advantages of silicon spin qubits over other platforms, making them very promising candidates in the quest for quantum…”
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A new FDSOI spin qubit platform with 40nm effective control pitch by Bedecarrats, T., Paz, B. Cardoso, Diaz, B. Martinez, Niebojewski, H., Bertrand, B., Rambal, N., Comboroure, C., Sarrazin, A., Boulard, F., Guyez, E., Hartmann, J.-M., Morand, Y., Magalhaes-Lucas, A., Nowak, E., Catapano, E., Casse, M., Urdampilleta, M., Niquet, Y.-M., Gaillard, F., De Franceschi, S., Meunier, T., Vinet, M.

“…Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately…”
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Material and integration challenges for large scale Si quantum computing by Vinet, M., Bedecarrats, T., Paz, B. Cardoso, Martinez, B., Chanrion, E., Catapano, E., Contamin, L., Pallegoix, L., Venitucci, B., Mazzocchi, V., Niebojewski, H., Bertrand, B., Rambal, N., Thomas, C., Charbonnier, J., Mortemousque, P.-A., Hartmann, J.-M., Nowak, E., Thonnart, Y., Billiot, G., Casse, M., Urdampilleta, M., Niquet, Y.-M., Perruchot, F., De Franceschi, S., Meunier, T.

“…Si spin qubits are very promising to enable large scale quantum computing as they are fast, of high quality and small. However, they are still lagging behind…”
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