Search Results - "Pawlak, B. J."

Correlative light and electron microscopy reveals discrepancy between gold and fluorescence labelling by VAN ELSLAND, D.M., BOS, E., PAWLAK, J.B., OVERKLEEFT, H.S., KOSTER, A.J., VAN KASTEREN, S.I.

“…Summary Electron microscopy (EM) is traditionally employed as a follow‐up to fluorescence microscopy (FM) to resolve the cellular ultrastructures wherein…”
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Studies of implanted boron emitters for solar cell applications by Pawlak, B. J., Janssens, T., Singh, S., Kuzma-Filipek, I., Robbelein, J., Posthuma, N. E., Poortmans, J., Cristiano, F., Bazizi, E. M.

“…ABSTRACT B implanted emitters are investigated in the back junction cell configuration and their material properties are tested in double side implanted Si…”
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Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions by Pawlak, B. J., Surdeanu, R., Colombeau, B., Smith, A. J., Cowern, N. E. B., Lindsay, R., Vandervorst, W., Brijs, B., Richard, O., Cristiano, F.

“…We investigate the thermal stability of boron-doped junctions formed by Ge preamorphization and solid phase epitaxial regrowth. Isochronal annealing and…”
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Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal by Mertens, H., Ritzenthaler, R., Arimura, H., Franco, J., Sebaai, F., Hikavyy, A., Pawlak, B. J., Machkaoutsan, V., Devriendt, K., Tsvetanova, D., Milenin, A. P., Witters, L., Dangol, A., Vancoille, E., Bender, H., Badaroglu, M., Holsteyns, F., Barla, K., Mocuta, D., Horiguchi, N., Thean, A. V.-Y

“…We demonstrate Si-cap-free SiGe p-channel FinFETs and gate-all-around (GAA) FETs in a replacement metal gate (RMG) process, for Ge contents of 25% and 45%. We…”
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Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth by Pawlak, B. J., Vandervorst, W., Smith, A. J., Cowern, N. E. B., Colombeau, B., Pages, X.

“…We investigate the influence of thermal conditions during solid phase epitaxial regrowth (SPER) on the electrical activation level of boron in preamorphized…”
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Boron diffusion in amorphous silicon and the role of fluorine by Duffy, R., Venezia, V. C., Heringa, A., Pawlak, B. J., Hopstaken, M. J. P., Maas, G. C. J., Tamminga, Y., Dao, T., Roozeboom, F., Pelaz, L.

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Cardiovascular effects of exogenous adrenomedullin and CGRP in Ramp and Calcrl deficient mice by Pawlak, J.B., Wetzel-Strong, S.E., Dunn, M.K., Caron, K.M.

“…•Ramp1−/− male mice have higher basal blood pressure while under anesthesia.•Ramp1−/−, Ramp3−/−, and Calcrl+/− males have higher basal blood pressure than…”
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Arsenic Junction Thermal Stability and High-Dose Boron-Pocket Activation During SPER in nMOS Transistors by Severi, S., Pawlak, B.J., Duffy, R., Augendre, E., Henson, K., Lindsay, R., De Meyer, K.

“…In this letter, thermal stability of arsenic (As) junctions formed by solid-phase epitaxial regrowth and their impact on device performance are investigated…”
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Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering by Ferain, I., Duffy, R., Collaert, N., van Dal, M.J.H., Pawlak, B.J., O’Sullivan, B., Witters, L., Rooyackers, R., Conard, T., Popovici, M., van Elshocht, S., Kaiser, M., Weemaes, R.G.R., Swerts, J., Jurczak, M., Lander, R.J.P., De Meyer, K.

“…At short gate lengths, narrow multiple-gate FETs (MuGFETs) are known to offer superior short channel effect (SCE) control than their bulk Si counterpart [Doyle…”
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Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon by Pawlak, B. J., Janssens, T., Brijs, B., Vandervorst, W., Collart, E. J. H., Felch, S. B., Cowern, N. E. B.

“…We investigate the impact of amorphization and C co-implantation on B diffusion and activation properties after conventional spike rapid thermal annealing…”
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Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si by Pawlak, B. J., Cowern, N. E. B., Ahn, C., Vandervorst, W., Gwilliam, R., van Berkum, J. G. M.

“…A series of B implantation experiments into initially amorphized and not fully recrystallized Si, i.e., into an existing a/c-Si bi-layer material, have been…”
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Yin-Yang1 Is Required in the Mammalian Oocyte for Follicle Expansion by GRIFFITH, Gillian J, TRASK, Mary C, HILLER, Jacob, WALENTUK, Melanie, PAWLAK, John B, TREMBLAY, Kimberly D, MAGER, Jesse

“…The multifaceted polycomb group gene Yin-Yang1 (Yy1) has been implicated in a variety of transcriptional regulatory roles both as an activator and silencer of…”
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Accurate electrical activation characterization of CMOS ultra-shallow profiles by Clarysse, T., Dortu, F., Vanhaeren, D., Hoflijk, I., Geenen, L., Janssens, T., Loo, R., Vandervorst, W., Pawlak, B.J., Ouzeaud, V., Defranoux, C., Faifer, V.N., Current, M.I.

“…Understanding dopant diffusion and activation mechanisms is a key issue for future sub-45 nm CMOS technologies. This understanding requires the availability of…”
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Photoluminescence from Si:Er under front and backside excitation by Pawlak, B.J., Gregorkiewicz, T.

“…Photoluminescence (PL) of Si:Er samples was investigated in two experimental configurations, the excitation beam from an argon-laser was applied either from…”
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Multi-gate devices for the 32 nm technology node and beyond by COLLAERT, N, DE KEERSGIETER, A, SCHULZ, T, SAN, K. T, SON, N. J, VAN DAL, M. J. H, VERHEYEN, P, VON ARNIM, K, WITTERS, L, DE MEYER, K, BIESEMANS, S, JURCZAK, M, DIXIT, A, FERAIN, I, LAI, L.-S, LENOBLE, D, MERCHA, A, NACKAERTS, A, PAWLAK, B. J, ROOYACKERS, R

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Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon by Torregiani, C., Maex, K., Benedetti, A., Bender, H., Van Houtte, P., Pawlak, B. J., Kittl, J. A.

“…The relationship between silicide grain orientation and strain/stress induced in patterned silicon has been experimentally investigated for structures formed…”
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Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors by Duffy, R., Van Dal, M. J. H., Pawlak, B. J., Kaiser, M., Weemaes, R. G. R., Degroote, B., Kunnen, E., Altamirano, E.

“…The authors investigate the implications of amorphizing ion implants on the crystalline integrity of sub-20nm wide fin field-effect transistors (FinFETs)…”
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Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing by Augendre, E., Pawlak, B.J., Kubicek, S., Hoffmann, T., Chiarella, T., Kerner, C., Severi, S., Falepin, A., Ramos, J., De Keersgieter, A., Eyben, P., Vanhaeren, D., Vandervorst, W., Jurczak, M., Absil, P., Biesemans, S.

“…We report the simultaneous improvement of both on- and off-properties for n- and p-channel MOSFETs by means of carbon co-implantation at extension level, using…”
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Ion implantation as a potential alternative for the formation of Front Surface Fields for IBC silicon solar cells by Aleman, M, Rosseel, E, Van Wichelen, K, Pawlak, B J, Janssens, T, Dross, F, Posthuma, N E, Poortmans, J

“…Interdigitated back contacted cells (IBC) constitute an excellent option for the achievement of high-efficiency on silicon material. The effective…”
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Demonstration of Package Level 3D-printed Direct Jet Impingement Cooling applied to High power, Large Die Applications by Wei, T.-W., Oprins, H., Cherman, V., Yang, Z., Rivera, K., Van der Plas, G., Pawlak, B. J., England, L., Beyne, E., Baelmans, M.

“…This work presents, for the first time, a package- level, bare die liquid jet impingement 3D polymer microfluidics heatsink fabricated using 3D printing, or…”
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