Search Results - "Paul Salvestrini, Jean"

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy by Li, Xin, Sundaram, Suresh, El Gmili, Youssef, Ayari, Taha, Puybaret, Renaud, Patriarche, Gilles, Voss, Paul L, Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…This article reports on two-dimensional (2D) layered hexagonal BN (h-BN) grown on sapphire by metalorganic vapor phase epitaxy (MOVPE). The highly oriented…”
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Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: A simulation study by Tijent, Fatima Z., Faqir, Mustapha, Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah

“…•The drain current and transconductance of hBN/GaN/diamond HEMT are increased by 47 % compared to SiO2/GaN/sapphire HEMT.•The effect of hBN passivation layer…”
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Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE by Li, Xin, Jordan, Matthew B., Ayari, Taha, Sundaram, Suresh, El Gmili, Youssef, Alam, Saiful, Alam, Muhbub, Patriarche, Gilles, Voss, Paul L., Paul Salvestrini, Jean, Ougazzaden, Abdallah

“…Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress…”
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Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN by Ayari, Taha, Sundaram, Suresh, Li, Xin, El Gmili, Youssef, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer…”
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Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications by Ayari, Taha, Bishop, Chris, Jordan, Matthew B., Sundaram, Suresh, Li, Xin, Alam, Saiful, ElGmili, Youssef, Patriarche, Gilles, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…The transfer of GaN based gas sensors to foreign substrates provides a pathway to enhance sensor performance, lower the cost and extend the applications to…”
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Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates by Karrakchou, Soufiane, Sundaram, Suresh, Ayari, Taha, Mballo, Adama, Vuong, Phuong, Srivastava, Ashutosh, Gujrati, Rajat, Ahaitouf, Ali, Patriarche, Gilles, Leichlé, Thierry, Gautier, Simon, Moudakir, Tarik, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device…”
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Photovoltaic Concentration: Research and Development by El Himer, Sarah, El Ayane, Salima, El Yahyaoui, Sara, Salvestrini, Jean Paul, Ahaitouf, Ali

“…Concentrator Photovoltaic (CPV) technology, by using efficient optical elements, small sizes and high efficiency multi-junction solar cells, can be seen as a…”
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BAlN thin layers for deep UV applications by Li, Xin, Sundaram, Suresh, Gmili, Youssef El, Moudakir, Tarik, Genty, Frédéric, Bouchoule, Sophie, Patriarche, Gilles, Dupuis, Russell D., Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah

“…In this work, wurtzite BAlN layers with boron composition as high as 12% were successfully grown by MOVPE. The growth was performed at 650 °C and then annealed…”
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High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells by El-Huni, Walid, Migan, Anne, Djebbour, Zakaria, Salvestrini, Jean-Paul, Ougazzaden, Abdallah

“…In this work, we present a double‐junction solar cell with a crystalline silicon solar cell as a bottom junction and an indium gallium nitride‐based…”
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Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask by Puybaret, Renaud, Patriarche, Gilles, Jordan, Matthew B., Sundaram, Suresh, El Gmili, Youssef, Salvestrini, Jean-Paul, Voss, Paul L., de Heer, Walt A., Berger, Claire, Ougazzaden, Abdallah

“…We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned…”
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Biosensors for the Rapid Detection of Cardiovascular Biomarkers of Vital Interest: Needs, Analysis and Perspectives by Abensur Vuillaume, Laure, Frija-Masson, Justine, Hadjiat, Meriem, Riquier, Thomas, d'Ortho, Marie-Pia, Le Borgne, Pierrick, Goetz, Christophe, Voss, Paul L, Ougazzaden, Abdallah, Salvestrini, Jean-Paul, Leïchlé, Thierry

“…We have previously surveyed a panel of 508 physicians from around the world about which biomarkers would be relevant if obtained in a very short time frame,…”
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Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride by Sundaram, Suresh, Li, Xin, Halfaya, Yacine, Ayari, Taha, Patriarche, Gilles, Bishop, Christopher, Alam, Saiful, Gautier, Simon, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…Hexagonal boron nitride (h‐BN) is a promising 2D template that decouples substrate effects from the layer above it by van der Waals epitaxy, because there are…”
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Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions by Mballo, Adama, Srivastava, Ashutosh, Sundaram, Suresh, Vuong, Phuong, Karrakchou, Soufiane, Halfaya, Yacine, Gautier, Simon, Voss, Paul L, Ahaitouf, Ali, Salvestrini, Jean Paul, Ougazzaden, Abdallah

“…Reliable p-doped hexagonal boron nitride (h-BN) could enable wide bandgap optoelectronic devices such as deep ultra-violet light emitting diodes (UV LEDs),…”
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Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi‐bulk InGaN buffer for blue to green regime emission by Alam, Saiful, Sundaram, Suresh, li, Xin, Jamroz, Miryam E., El Gmili, Youssef, Robin, Ivan C., Voss, Paul L., Salvestrini, Jean‐Paul, Ougazzaden, Abdallah

“…The effect of indium (In) in the barrier of InGaN/GaN multiple quantum well (MQW) has been studied for MQWs with and without semi‐bulk InGaN buffer. From…”
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Relevant Biomarkers in Medical Practices: An Analysis of the Needs Addressed by an International Survey by Abensur Vuillaume, Laure, Leichle, Thierry, Le Borgne, Pierrick, Grajoszex, Mathieu, Goetz, Christophe, Voss, Paul L, Ougazzaden, Abdallah, Salvestrini, Jean-Paul, d'Ortho, Marie-Pia

“…(1) Backround: Technological advances should foster gains in physicians' efficiency. For example, a reduction of the medical decision time can be enabled by…”
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Investigation of p‐contact performance for indium rich InGaN based light emitting diodes and solar cells by Alam, Saiful, Sundaram, Suresh, Haas, Helge, Li, Xin, El Gmili, Youssef, Jamroz, Miryam E., Robin, Ivan C., Voss, Paul L., Salvestrini, Jean‐Paul, Ougazzaden, Abdallah

“…We report on the optimization of p‐GaN layers for high indium (In) content InGaN applications by optimizing temperature, precursor CP2Mg flow rate and III/V…”
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Analysis and control of DC drift in LiNbO3-based Mach-Zehnder modulators by Salvestrini, Jean-Paul, Guilbert, Laurent, Fontana, Marc, Abarkan, Mustapha, Gille, Stéphane

“…The drift issue induces slow drifting of the optimum operating point for high efficiency or large nonlinearities in analog optical links, and requires complex…”
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Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor by Sama, Nossikpendou Yves, Bouhnane, Hafsa, Gautier, Simon, Ahaitouf, Ali, Matray, Jean Michel, Paul Salvestrini, Jean, Ougazzaden, Abdallah, Hathcock, Andrew, He, Dongyuan, Phuong Vuong, Thi Quynh, Karrakchou, Soufiane, Ayari, Taha, Mballo, Adama, Bishop, Chris, Halfaya, Yacine

“…In this work, an all-solid-state electrolyte-insulator-semiconductor (EIS) device is developed for pH sensing performance evaluation of insulating materials…”
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N-Face Semi-Bulk Absorber Boosts Conversion Efficiency of InGaN Solar Cell by Belghouthi, Rabeb, Rached, Amani, Aillerie, Michel, Mohammed, Ramdani, Gujrati, Rajat, Salvestrini, Jean-Paul

“…The purpose of this paper is to investigate the N-face InGaN semi-bulk as a solution to achieve a high-efficiency solar cell based on III-nitride materials,…”
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Hydrogen Confinement in Hexagonal Boron Nitride Bubbles Using UV Laser Illumination by Tijent, Fatima Z, Bouzourâa, Montassar B, Ottapilakkal, Vishnu, Perepeliuc, Andre, Gujrati, Rajat, Vuong, Phuong, Sundaram, Suresh, Faqir, Mustapha, Voss, Paul L, Salvestrini, Jean-Paul, Ougazzaden, Abdallah

“…Hexagonal boron nitride (h-BN) bubbles are of significant interest to micro-scale hydrogen storage thanks to their ability to confine hydrogen gas molecules…”
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