Search Results - "Pauc, N."

Lasing in strained germanium microbridges by Armand Pilon, F. T., Lyasota, A., Niquet, Y.-M., Reboud, V., Calvo, V., Pauc, N., Widiez, J., Bonzon, C., Hartmann, J. M., Chelnokov, A., Faist, J., Sigg, H.

“…Germanium has long been regarded as a promising laser material for silicon based opto-electronics. It is CMOS-compatible and has a favourable band structure,…”
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Room temperature optically pumped GeSn microdisk lasers by Chrétien, J., Thai, Q. M., Frauenrath, M., Casiez, L., Chelnokov, A., Reboud, V., Hartmann, J. M., El Kurdi, M., Pauc, N., Calvo, V.

“…GeSn alloys are promising materials for light emitters monolithically grown on silicon. In this work, we demonstrate room temperature (RT) lasing in a GeSn…”
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Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K by Reboud, V., Gassenq, A., Pauc, N., Aubin, J., Milord, L., Thai, Q. M., Bertrand, M., Guilloy, K., Rouchon, D., Rothman, J., Zabel, T., Armand Pilon, F., Sigg, H., Chelnokov, A., Hartmann, J. M., Calvo, V.

“…Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si…”
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Impact of thickness on the structural properties of high tin content GeSn layers by Aubin, J., Hartmann, J.M., Gassenq, A., Milord, L., Pauc, N., Reboud, V., Calvo, V.

“…•Reduced Pressure Chemical Vapor Deposition of GeSn alloys.•Thick GeSn layers with very high Sn concentrations.•Impact of thickness on the structural and…”
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Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content by Gassenq, A., Milord, L., Aubin, J., Pauc, N., Guilloy, K., Rothman, J., Rouchon, D., Chelnokov, A., Hartmann, J. M., Reboud, V., Calvo, V.

“…GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the…”
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Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode by Galbiati, S., Morin, A., Pauc, N.

“…[Display omitted] •A simple process for the fabrication of Pt nanotubes arrays has been developed.•The nanotubes array is stuck on a Nafion membrane and is…”
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Up to 300 K lasing with GeSn-On-Insulator microdisk resonators by Bjelajac, A, Gromovyi, M, Sakat, E, Wang, B, Patriarche, G, Pauc, N, Calvo, V, Boucaud, P, Boeuf, F, Chelnokov, A, Reboud, V, Frauenrath, M, Hartmann, J-M, El Kurdi, M

“…GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV…”
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Effect of HCl on the doping and shape control of silicon nanowires by Gentile, P, Solanki, A, Pauc, N, Oehler, F, Salem, B, Rosaz, G, Baron, T, Den Hertog, M, Calvo, V

“…The introduction of hydrogen chloride during the in situ doping of silicon nanowires (SiNWs) grown using the vapor-liquid-solid (VLS) mechanism was…”
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Vertically Aligned Platinum Copper Nanotubes as PEM Fuel Cell Cathode: Elaboration and Fuel Cell Test by Marconot, O., Pauc, N., Buttard, D., Morin, A.

“…This paper describes the elaboration via an electrochemistry route of a PEM carbon‐free cathode made of a periodic array of vertically aligned platinum copper…”
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1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications by Gassenq, A., Guilloy, K., Osvaldo Dias, G., Pauc, N., Rouchon, D., Hartmann, J.-M., Widiez, J., Tardif, S., Rieutord, F., Escalante, J., Duchemin, I., Niquet, Y.-M., Geiger, R., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Reboud, V., Calvo, V.

“…High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific…”
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2D hexagonal photonic crystal GeSn laser with 16% Sn content by Thai, Q. M., Pauc, N., Aubin, J., Bertrand, M., Chrétien, J., Chelnokov, A., Hartmann, J. M., Reboud, V., Calvo, V.

“…We demonstrate lasing in an optically pumped GeSn photonic crystal membrane with 16% of Sn. A guided band-edge mode lased up to 60 K. A good agreement was…”
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Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content by Gassenq, A., Milord, L., Aubin, J., Guilloy, K., Tardif, S., Pauc, N., Rothman, J., Chelnokov, A., Hartmann, J. M., Reboud, V., Calvo, V.

“…Adding Tin (Sn) to Germanium (Ge) can turn it into a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. Several approaches…”
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Germanium based photonic components toward a full silicon/germanium photonic platform by Reboud, V., Gassenq, A., Hartmann, J.M., Widiez, J., Virot, L., Aubin, J., Guilloy, K., Tardif, S., Fédéli, J.M., Pauc, N., Chelnokov, A., Calvo, V.

“…Lately, germanium based materials attract a lot of interest as they can overcome some limits inherent to standard Silicon Photonics devices and can be used…”
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Impact of the growth strategy and device fabrication on the alloy homogeneity in optoelectronic grade Sn-rich GeSn by Segura-Ruiz, Jaime, Pauc, N., Chrétien, J., Casiez, L., Hartmann, J.M., Chelnokov, A., Calvo, V., Reboud, V., Tardif, S., Tucoulou, R., Villanova, J.

“…[Display omitted] •Homogeneous Sn distribution in GeSn micro-disks with very high Sn concentration.•SiGeSn buffer allows perfect GeSn micro-disks by providing…”
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Surface Recombination Velocity Measurements of Efficiently Passivated Gold-Catalyzed Silicon Nanowires by a New Optical Method by Demichel, O, Calvo, V, Besson, A, Noé, P, Salem, B, Pauc, N, Oehler, F, Gentile, P, Magnea, N

“…The past decade has seen the explosion of experimental results on nanowires grown by catalyzed mechanisms. However, few are known on their electronic…”
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Tuning silicon nanowires doping level and morphology for highly efficient micro-supercapacitors by Thissandier, F., Gentile, P., Pauc, N., Brousse, T., Bidan, G., Sadki, S.

“…Silicon nanowires (SiNWs) are grown by Chemical Vapor Deposition on highly doped silicon wafer via localized gold catalysis with monitored length, diameter,…”
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Accurate strain measurements in highly strained Ge microbridges by Gassenq, A., Tardif, S., Guilloy, K., Osvaldo Dias, G., Pauc, N., Duchemin, I., Rouchon, D., Hartmann, J.-M., Widiez, J., Escalante, J., Niquet, Y.-M., Geiger, R., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Rieutord, F., Reboud, V., Calvo, V.

“…Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at…”
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Study of the light emission in Ge layers and strained membranes on Si substrates by Gassenq, A., Guilloy, K., Pauc, N., Hartmann, J.-M., Osvaldo Dias, G., Rouchon, D., Tardif, S., Escalante, J., Duchemin, I., Niquet, Y.-M., Chelnokov, A., Reboud, V., Calvo, Vincent

“…The influence of pattern design and tensile strain on light emission was investigated in Ge layers and suspended membranes. The optical properties were…”
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Structural and electronic properties of in-situ phosphorous-doped Ge layers grown by reduced pressure-chemical vapour deposition by Hartmann, J.M., Benevent, V., Reboud, V., Chelnokov, A., Guilloy, K., Pauc, N., Calvo, V.

“…We have quantified the impact of the PH3 mass-flow and the H2 annealing scheme on the structural and optical properties of thin and thick Ge:P layers grown at…”
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Direct Quantification of Gold along a Single Si Nanowire by Bailly, A, Renault, O, Barrett, N, Zagonel, L. F, Gentile, P, Pauc, N, Dhalluin, F, Baron, T, Chabli, A, Cezar, J. C, Brookes, N. B

“…The presence of gold on the sidewall of a tapered, single silicon nanowire is directly quantified from core-level nanospectra using energy-filtered…”
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