Search Results - "Pau, J. L"

Analysis of Zinc Nitride Resistive Indicators under Different Relative Humidity Conditions by Gómez-Castaño, M, Redondo-Cubero, A, Vázquez, L, Pau, J. L

“…Zinc nitride (Zn3N2) is a metastable material in ambient conditions because of its high reactivity with water molecules. In this work we perform a systematic…”
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Thin film transistors based on zinc nitride as a channel layer for optoelectronic devices by García Núñez, C., Pau, J. L., Ruíz, E., Piqueras, J.

“…Zinc nitride films were used as an active layer in thin film transistors to assess its performance in optoelectronic applications. Those nitride layers were…”
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Hands-On Quantum Sensing with NV− Centers in Diamonds by Sánchez Toural, J. L., Marzoa, V., Bernardo-Gavito, R., Pau, J. L., Granados, D.

“…The physical properties of diamond crystals, such as color or electrical conductivity, can be controlled via impurities. In particular, when doped with…”
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Influence of air exposure on the compositional nature of Zn3N2 thin films by Núñez, C. García, Pau, J.L., Hernández, M.J., Cervera, M., Ruíz, E., Piqueras, J.

“…Zinc nitride (Zn3N2) films were prepared by radio-frequency magnetron sputtering from a pure Zn target in a N2 ambient. Films were deposited on glass and…”
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Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN by Bayram, C., Pau, J. L., McClintock, R., Razeghi, M.

“…Growths of blue and green multi-quantum wells (MQWs) and light-emitting diodes (LEDs) are realized on lateral epitaxial overgrowth (LEO) GaN, and compared with…”
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Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy by García Núñez, C., Braña, A.F., Pau, J.L., Ghita, D., García, B.J., Shen, G., Wilbert, D.S., Kim, S.M., Kung, P.

“…GaAs nanowires (NWs) were grown by Ga-assisted chemical beam epitaxy on Si(111) substrates covered by a thin oxide layer using different substrate temperatures…”
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Preparation of zinc tin oxide films by reactive magnetron sputtering of Zn on liquid Sn by Pau, J.L., Scheffler, L., Hernández, M.J., Cervera, M., Piqueras, J.

“…Zn is sputter-deposited on melted Sn films by radio-frequency magnetron sputtering in oxidizing plasma. The samples present an absorption cut-off wavelength…”
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AlGaN-based UV photodetectors by Monroy, E., Calle, F., Pau, J.L., Muñoz, E., Omnès, F., Beaumont, B., Gibart, P.

“…Al x Ga 1− x N alloys are very attractive materials for application to ultraviolet photodetection. AlGaN photoconductors, Schottky photodiodes,…”
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Plasmonic coupling in closed-packed ordered gallium nanoparticles by Catalán-Gómez, S., Bran, C., Vázquez, M., Vázquez, L., Pau, J. L., Redondo-Cubero, A.

“…Plasmonic gallium (Ga) nanoparticles (NPs) are well known to exhibit good performance in numerous applications such as surface enhanced fluorescence and Raman…”
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Narrow-band photodetection based on M -plane GaN films by Ghosh, Sandip, Rivera, C., Pau, J. L., Muñoz, E., Brandt, O., Grahn, H. T.

“…Rapid identification of a range of hazardous airborne biological and chemical agents requires simultaneous detection at several specific wavelengths, and…”
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Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes by McClintock, R., Pau, J. L., Minder, K., Bayram, C., Kung, P., Razeghi, M.

“…Avalanche p - i - n photodiodes were fabricated on AlN templates for back illumination. Structures with different intrinsic layer thicknesses were tested. A…”
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High temperature assessment of nitride-based devices by Cuerdo, R., Pedrós, J., Navarro, A., Braña, A. F., Pau, J. L., Muñoz, E., Calle, F.

“…The high temperature characterization of GaN-based devices, including high electron mobility transistors (HEMTs), p-i-n photodiodes and surface acoustic wave…”
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Back-illuminated separate absorption and multiplication GaN avalanche photodiodes by Pau, J. L., Bayram, C., McClintock, R., Razeghi, M., Silversmith, D.

“…The performance of back-illuminated avalanche photodiodes with separate absorption and multiplication regions is presented. Devices with an active area of 225…”
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Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications by Pau, J.L., Pereiro, J., Rivera, C., Muñoz, E., Calleja, E.

“…Different growth modes have been identified in thick (⩾500 nm) AlGaN and InGaN layers grown by plasma-assisted molecular beam epitaxy as a function of…”
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Low frequency noise in InGaN/GaN MQW-based photodetector structures by Navarro, A., Rivera, C., Cuerdo, R., Pau, J. L., Pereiro, J., Muñoz, E.

“…Noise characteristics of InGaN/GaN multiple‐quantum‐well (MQW) photodiodes (PD) and photoconductors (PC) were studied. 1/f ‐type noise was examined in MQW PDs…”
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Analytical simulation of RBS spectra of nanowire samples by Barradas, Nuno P., García Núñez, C., Redondo-Cubero, A., Shen, G., Kung, P., Pau, J.L.

“…Almost all, if not all, general purpose codes for analysis of Ion Beam Analysis data have been originally developed to handle laterally homogeneous samples…”
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A route to detect H2 in ambient conditions using a sensor based on reduced graphene oxide by Tabares, G., Redondo-Cubero, A., Vazquez, L., Revenga, M., Cortijo-Campos, S., Lorenzo, E., de Andrés, A., Ruiz, E., Pau, J.L.

“…Change in resistance of rGO/AZO and AZO sensor under an accumulated exposition at 40 sccm of H2 (g) over time. [Display omitted] •Positioning of GO flakes…”
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On the zinc nitride properties and the unintentional incorporation of oxygen by Núñez, C. García, Pau, J.L., Hernández, M.J., Cervera, M., Ruiz, E., Piqueras, J.

“…Zinc nitride films were prepared by radio-frequency magnetron sputtering in N 2/Ar ambient using different substrates (glass and thermally-oxidized-Si) and…”
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On the true optical properties of zinc nitride by García Núñez, C., Pau, J. L., Hernández, M. J., Cervera, M., Piqueras, J.

“…Refractive index ( n ) and extinction coefficient ( k ) of Zn 3 N 2 layers deposited by radio-frequency magnetron sputtering at temperatures ( T s ) between…”
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Electrografting of N’,N’-dimethylphenothiazin-5-ium-3,7-diamine (Azure A) diazonium salt forming electrocatalytic organic films on gold or graphene oxide gold hybrid electrodes by Gómez-Anquela, C., Revenga-Parra, M., Abad, J.M., Marín, A. García, Pau, J.L., Pariente, F., Piqueras, J., Lorenzo, E.

“…Electroactive films containing redox active phenothiazine moieties are covalently bound onto gold and graphene oxide gold hybrid electrodes, using reductive…”
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