Search Results - "Pate, N.D."

Laser-Induced Current Transients in Silicon-Germanium HBTs by Pellish, J.A., Reed, R.A., McMorrow, D., Melinger, J.S., Jenkins, P., Sutton, A.K., Diestelhorst, R.M., Phillips, S.D., Cressler, J.D., Pouget, V., Pate, N.D., Kozub, J.A., Mendenhall, M.H., Weller, R.A., Schrimpf, R.D., Marshall, P.W., Tipton, A.D., Niu, G.

“…Device-level current transients are induced by injecting carriers using two-photon absorption from a subbandgap pulsed laser and recorded using wideband…”
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Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures by Gadlage, M.J., Ahlbin, J.R., Narasimham, B., Ramachandran, V., Dinkins, C.A., Pate, N.D., Bhuva, B.L., Schrimpf, R.D., Massengill, L.W., Shuler, R.L., McMorrow, D.

“…Combinational-logic soft errors are expected to be the dominant reliability issue for advanced technologies. One of the major factors affecting the soft-error…”
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