Search Results - "Pasquariello, Donato"

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  1. 1

    Surface energy as a function of self-bias voltage in oxygen plasma wafer bonding by Pasquariello, Donato, Lindeberg, Mikael, Hedlund, Christer, Hjort, Klas

    Published in Sensors and actuators. A. Physical. (15-05-2000)
    “…A limitation in the use of wafer bonding has been the necessity for high-temperature annealing after contacting the wafers at room temperature. In this paper,…”
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    Journal Article
  2. 2
  3. 3

    Crystalline Defects in InP-to-Silicon Direct Wafer Bonding by Pasquariello, Donato, Camacho, Martin, Ericsson, Fredric, Hjort, Klas

    “…InP-to-Si wafer bonding has been proposed as a way of circumventing the problems associated with lattice-mismatch in heteroepitaxial growth. Therefore, in this…”
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    Journal Article
  4. 4

    Plasma-assisted InP-to-Si low temperature wafer bonding by Pasquariello, D., Hjort, K.

    “…The applicability of wafer bonding as a tool to integrate the dissimilar material system InP-to-Si is presented and discussed with recent examples of InP-based…”
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    Journal Article
  5. 5

    Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices by Pasquariello, D., Bjorlin, E.S., Lasaosa, D., Chiu, Yi.-J., Piprek, J., Bowers, J.E.

    Published in Journal of lightwave technology (01-03-2006)
    “…In this paper, the authors show how selective undercut etching of InGaAs and InGaAsP-based quantum wells (QWs) can improve the performance of InP-based…”
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    Journal Article
  6. 6

    Remote-Touch: A Laser Input User-Display Interaction Technology by Pasquariello, D., Vissenberg, M.C.J.M., Destura, G.J.

    Published in Journal of display technology (01-03-2008)
    “…In this paper, we present a new user-display interaction technology in which a laser-pointer is used to select objects on a display screen. In this interaction…”
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    Journal Article
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  8. 8

    Evaluation of InP-to-silicon heterobonding by Pasquariello, Donato, Camacho, Martin, Hjort, Klas, Dózsa, László, Szentpáli, Béla

    “…In this paper, we evaluate hydrophilic (HP) and hydrophobic (HB) surface pre-treatments in InP-to-Si direct wafer bonding. Surface roughness and surface…”
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    Journal Article Conference Proceeding
  9. 9

    Optimization of GaAs amplification photodetectors for 700% quantum efficiency by Piprek, J., Lasaosa, D., Pasquariello, D., Bowers, J.E.

    “…We investigate the device physics of novel GaAs waveguide photodetectors with integrated photon multiplication. Such detectors have the potential to achieve…”
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    Journal Article
  10. 10

    InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding by FORSBERG, Markus, PASQUARIELLO, Donato, CAMACHO, Martin, BERGMAN, David

    Published in Journal of electronic materials (01-03-2003)
    “…InP MOS structures are fabricated by transferring thermally grown SiO2 to InP from oxidized Si wafers using O plasma assisted wafer bonding followed by…”
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    Journal Article
  11. 11

    Traveling-wave photodetectors with high power-bandwidth and gain-bandwidth product performance by Lasaosa, D., Jin-Wei Shi, Pasquariello, D., Gan, K.-G., Ming-Chun Tien, Hsu-Hao Chang, Shi-Wei Chu, Chi-Kuang Sun, Yi-Jen Chiu, Bowers, J.E.

    “…Traveling-wave photodetectors (TWPDs) are an attractive way to simultaneously maximize external quantum efficiency, electrical bandwidth, and maximum…”
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    Journal Article
  12. 12

    High gain, high efficiency vertical-cavity semiconductor optical amplifiers by Bjorlin, E.S., Abraham, P., Pasquariello, D., Piprek, J., Yi-Jen Chiu, Bowers, J.E.

    “…Highly efficient long wavelength vertical-cavity semiconductor optical amplifiers (VCSOAs) are presented. A carrier confining structure was introduced by…”
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    Conference Proceeding
  13. 13

    Fabrication of tunable InP/air-gap Fabry-Perot cavities by selective etching of InGaAs sacrificial layers by Chitica, Nicolae, Daleiden, Jürgen, Bentell, Jonas, André, Janos, Strassner, Martin, Greek, Staffan, Pasquariello, Donato, Karlsson, Mikael, Gupta, Ram, Hjort, Klas

    Published in Physica scripta (01-01-1999)
    “…We report the fabrication of InP/air-gap Fabry-Perot resonant cavities with an improved tunability characteristic achieved through the micromachining of more…”
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    Journal Article
  14. 14

    Low temperature epitaxial layer transferring using oxygen plasma wafer bonding by Pasquariello, D., Camacho, M., Hjort, K.

    “…Summary form only given. Although wafer bonding alleviates the mismatch constraint the difference in thermal expansion remains. Consequently the high…”
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    Conference Proceeding