Search Results - "Pasquariello, Donato"
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Surface energy as a function of self-bias voltage in oxygen plasma wafer bonding
Published in Sensors and actuators. A. Physical. (15-05-2000)“…A limitation in the use of wafer bonding has been the necessity for high-temperature annealing after contacting the wafers at room temperature. In this paper,…”
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2
Analysis of the Degradation Mechanism during Repeated Overwrite of Phase-Change Discs
Published in Japanese Journal of Applied Physics (01-03-2007)Get full text
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3
Crystalline Defects in InP-to-Silicon Direct Wafer Bonding
Published in Japanese Journal of Applied Physics (2001)“…InP-to-Si wafer bonding has been proposed as a way of circumventing the problems associated with lattice-mismatch in heteroepitaxial growth. Therefore, in this…”
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4
Plasma-assisted InP-to-Si low temperature wafer bonding
Published in IEEE journal of selected topics in quantum electronics (01-01-2002)“…The applicability of wafer bonding as a tool to integrate the dissimilar material system InP-to-Si is presented and discussed with recent examples of InP-based…”
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5
Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices
Published in Journal of lightwave technology (01-03-2006)“…In this paper, the authors show how selective undercut etching of InGaAs and InGaAsP-based quantum wells (QWs) can improve the performance of InP-based…”
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6
Remote-Touch: A Laser Input User-Display Interaction Technology
Published in Journal of display technology (01-03-2008)“…In this paper, we present a new user-display interaction technology in which a laser-pointer is used to select objects on a display screen. In this interaction…”
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7
High-Speed 7× CuSi-Based Write-Once Blu-ray Disc
Published in Japanese Journal of Applied Physics (01-02-2006)Get full text
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8
Evaluation of InP-to-silicon heterobonding
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22-03-2001)“…In this paper, we evaluate hydrophilic (HP) and hydrophobic (HB) surface pre-treatments in InP-to-Si direct wafer bonding. Surface roughness and surface…”
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Journal Article Conference Proceeding -
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Optimization of GaAs amplification photodetectors for 700% quantum efficiency
Published in IEEE journal of selected topics in quantum electronics (01-05-2003)“…We investigate the device physics of novel GaAs waveguide photodetectors with integrated photon multiplication. Such detectors have the potential to achieve…”
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10
InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding
Published in Journal of electronic materials (01-03-2003)“…InP MOS structures are fabricated by transferring thermally grown SiO2 to InP from oxidized Si wafers using O plasma assisted wafer bonding followed by…”
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11
Traveling-wave photodetectors with high power-bandwidth and gain-bandwidth product performance
Published in IEEE journal of selected topics in quantum electronics (01-07-2004)“…Traveling-wave photodetectors (TWPDs) are an attractive way to simultaneously maximize external quantum efficiency, electrical bandwidth, and maximum…”
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12
High gain, high efficiency vertical-cavity semiconductor optical amplifiers
Published in Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) (2002)“…Highly efficient long wavelength vertical-cavity semiconductor optical amplifiers (VCSOAs) are presented. A carrier confining structure was introduced by…”
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Conference Proceeding -
13
Fabrication of tunable InP/air-gap Fabry-Perot cavities by selective etching of InGaAs sacrificial layers
Published in Physica scripta (01-01-1999)“…We report the fabrication of InP/air-gap Fabry-Perot resonant cavities with an improved tunability characteristic achieved through the micromachining of more…”
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14
Low temperature epitaxial layer transferring using oxygen plasma wafer bonding
Published in LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080) (2000)“…Summary form only given. Although wafer bonding alleviates the mismatch constraint the difference in thermal expansion remains. Consequently the high…”
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Conference Proceeding