Search Results - "Paskov, P P"

Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties by Papamichail, A., Persson, A. R., Richter, S., Stanishev, V., Armakavicius, N., Kühne, P., Guo, S., Persson, P. O. Å., Paskov, P. P., Rorsman, N., Darakchieva, V.

“…Ultra-thin high-Al content barrier layers can enable improved gate control and high-frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs)…”
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Evidence for two Mg related acceptors in GaN by Monemar, B, Paskov, P P, Pozina, G, Hemmingsson, C, Bergman, J P, Kawashima, T, Amano, H, Akasaki, I, Paskova, T, Figge, S, Hommel, D, Usui, A

“…The optical signatures of Mg-related acceptors in GaN have been revisited in samples specifically grown on bulk GaN templates, to avoid strain broadening of…”
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Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment by Paskov, P. P., Slomski, M., Leach, J. H., Muth, J. F., Paskova, T.

“…The effect of Si doping on the thermal conductivity of bulk GaN was studied both theoretically and experimentally. The thermal conductivity of samples grown by…”
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Recombination of free and bound excitons in GaN by Monemar, B., Paskov, P. P., Bergman, J. P., Toropov, A. A., Shubina, T. V., Malinauskas, T., Usui, A.

“…We report on recent optical investigations of free and bound exciton properties in bulk GaN. In order to obtain reliable data it is important to use low defect…”
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N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality by Zhang, Hengfang, Paskov, Plamen P., Kordina, Olof, Chen, Jr-Tai, Darakchieva, Vanya

“…Hot-wall metalorganic vapor phase epitaxy enables a superior quality of group-III nitride epitaxial layers and high electron mobility transistor structures,…”
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Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers by Papamichail, A., Persson, A. R., Richter, S., Kühne, P., Stanishev, V., Persson, P. O. Å., Ferrand-Drake Del Castillo, R., Thorsell, M., Hjelmgren, H., Paskov, P. P., Rorsman, N., Darakchieva, V.

“…Compositionally graded channel AlGaN/GaN high electron mobility transistors (HEMTs) offer a promising route to improve device linearity, which is necessary for…”
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Anisotropic strain and phonon deformation potentials in GaN by Darakchieva, V., Paskova, T., Schubert, M., Arwin, H., Paskov, P. P., Monemar, B., Hommel, D., Heuken, M., Off, J., Scholz, F., Haskell, B. A., Fini, P. T., Speck, J. S., Nakamura, S.

“…We report optical phonon frequency studies in anisotropically strained c-plane- and a-plane-oriented GaN films by generalized infrared spectroscopic…”
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Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity by Eriksson, M. O., Khromov, S., Paskov, P. P., Wang, X., Yoshikawa, A., Holtz, P. O., Monemar, B., Darakchieva, V.

“…Obtaining high quality, wurtzite InN films with p-type conductivity is a challenge, and there is limited information about the photoluminescence (PL)…”
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Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers by Paskova, T., Darakchieva, V., Paskov, P.P., Birch, J., Valcheva, E., Persson, P.O.A., Arnaudov, B., Tungasmitta, S., Monemar, B.

“…The influence of high temperature AlN buffer layers on the morphology, structural and optical characteristics of a-plane GaN grown by hydride vapour phase…”
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On the thermal conductivity anisotropy in wurtzite GaN by Tran, Dat Q., Paskova, Tania, Darakchieva, Vanya, Paskov, Plamen P.

“…GaN-based power devices operating at high currents and high voltages are critically affected by the dissipation of Joule heat generated in the active regions…”
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Recent developments in the III-nitride materials by Monemar, B., Paskov, P. P., Bergman, J. P., Toropov, A. A., Shubina, T. V.

“…We review a selection of recent research work on III‐nitride materials, limiting the scope to bulk properties and quantum well structures. The different stages…”
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Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates by Pozina, G., Paskov, P. P., Bergman, J. P., Hemmingsson, C., Hultman, L., Monemar, B., Amano, H., Akasaki, I., Usui, A.

“…Metastability of near band gap UV emissions in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on thick GaN templates grown by halide vapor…”
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Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor by Hemmingsson, C., Paskov, P.P., Pozina, G., Heuken, M., Schineller, B., Monemar, B.

“…Growth of 2-inch diameter bulk GaN layers with a thickness up to 2 mm is demonstrated in a vertical hydride vapour phase growth reactor. Morphology,…”
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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD by Gogova, Daniela, Ghezellou, Misagh, Tran, Dat Q., Richter, Steffen, Papamichail, Alexis, Hassan, Jawad ul, Persson, Axel R., Persson, Per O. Å., Kordina, Olof, Monemar, Bo, Hilfiker, Matthew, Schubert, Mathias, Paskov, Plamen P., Darakchieva, Vanya

“…The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on…”
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Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots by Paskov, P. P., Holtz, P. O., Monemar, B., Garcia, J. M., Schoenfeld, W. V., Petroff, P. M.

“…We report up-converted photoluminescence in a structure with InAs quantum dots embedded in GaAs. An efficient emission from the GaAs barrier is observed with…”
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Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy by Paskova, T., Hommel, D., Paskov, P. P., Darakchieva, V., Monemar, B., Bockowski, M., Suski, T., Grzegory, I., Tuomisto, F., Saarinen, K., Ashkenov, N., Schubert, M.

“…The effect of high-temperature high-pressure annealing on the residual strain, bending, and point defect redistribution of freestanding hydride vapor phase…”
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The dominant shallow 0.225 eV acceptor in GaN by Monemar, B., Paskov, P. P., Bergman, J. P., Paskova, T., Figge, S., Dennemarck, J., Hommel, D.

“…We have studied the optical signatures of the Mg acceptor in GaN, using samples that are doped with Mg during MOCVD growth. In order to reduce the defect…”
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Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect by Armakavicius, Nerijus, Knight, Sean, Kühne, Philipp, Stanishev, Vallery, Tran, Dat Q., Richter, Steffen, Papamichail, Alexis, Stokey, Megan, Sorensen, Preston, Kilic, Ufuk, Schubert, Mathias, Paskov, Plamen P., Darakchieva, Vanya

“…Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be…”
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Polarized photoluminescence study of free and bound excitons in free-standing GaN by PASKOV, P. P, PASKOVA, T, HOLTZ, P. O, MONEMAR, B

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Lattice parameters of GaN layers grown on a -plane sapphire: Effect of in-plane strain anisotropy by Darakchieva, V., Paskov, P. P., Paskova, T., Valcheva, E., Monemar, B., Heuken, M.

“…We have studied GaN films grown on a-plane sapphire by hydride vapor phase epitaxy and metalorganic vapor phase epitaxy. The in-plane lattice parameter was…”
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