Search Results - "Paskevic, C."
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Spectroscopic Ellipsometry Studies of Ferroelectric SbSexS1-xI Crystals
Published in Ferroelectrics (21-10-2008)“…In the present paper the optical spectra were measured by spectroscopic ellipsometry method in the range of 0.5-5.0 eV making use of a computer-controlled…”
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2
Influence of Magnetic Field on Detection Properties of Planar Microwave Diodes
Published in Acta physica Polonica, A (01-02-2011)Get full text
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Pulsed microwave sensor on heavily doped semiconductor substrate
Published in 2017 Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL) (01-11-2017)“…Design of unsophisticated cost-effective planar asymmetric microwave diode is proposed. Simplified technological process and use of simplex semiconductor…”
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Conference Proceeding -
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Electron transport in an [In.sub.0.52][Al.sub.0.48]As/[In.sub.0.53][Ga.sub.0.47]As/[In.sub.0.52][Al.sub.0 .48]As quantum well with a δ-Si doped barrier in high electric fields
Published in Semiconductors (Woodbury, N.Y.) (01-07-2010)“…The electron conduction in a two-dimensional channel of an [In.sub.0.52][Al.sub.0.48]As/[In.sub.0.53][Ga.sub.0.47]As/[In.sub.0.52][Al.sub.0 .48]As quantum well…”
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Electron transport in an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well with a {delta}-Si doped barrier in high electric fields
Published in Semiconductors (Woodbury, N.Y.) (15-07-2010)“…The electron conduction in a two-dimensional channel of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well (QW)…”
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6
Drift velocity of electrons in quantum wells in high electric fields
Published in Semiconductors (Woodbury, N.Y.) (01-04-2009)“…It is experimentally found that the maximum drift velocity of electrons in quantum wells of differently arranged AlGaAs/GaAs heterostructures and…”
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Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields
Published in Semiconductors (Woodbury, N.Y.) (01-07-2010)“…The electron conduction in a two-dimensional channel of an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As quantum well (QW) with a δ-Si doped barrier…”
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Journal Article -
8
Investigation of microwave properties of planar heterojunction diodes in Ka frequency range using probe station
Published in 2016 Progress in Electromagnetic Research Symposium (PIERS) (01-08-2016)“…Usual method to investigate high frequency parameters of the microwave diodes is to mount the single diode into microwave transmission line with following…”
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Conference Proceeding -
9
Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
Published in Acta physica Polonica, A (01-02-2011)Get full text
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10
Magnetic field influence on detection properties of planar microwave diodes on the base of modulation doped semiconductor structures
Published in 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (01-09-2010)“…Detection properties of planar microwave diodes have been investigated under the action of external magnetic field at room temperature. The diodes were…”
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Conference Proceeding -
11
Spectroscopic Ellipsometry Studies of Ferroelectric SbSe x S 1—x I Crystals
Published in Ferroelectrics (21-10-2008)Get full text
Journal Article