Search Results - "Paskevic, C."

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  1. 1

    Spectroscopic Ellipsometry Studies of Ferroelectric SbSexS1-xI Crystals by Audzijonis, A., Rèza, A., Žaltauskas, R., Žigas, L., Sereika, R., Paškevič, Č., Pauliukas, A.

    Published in Ferroelectrics (21-10-2008)
    “…In the present paper the optical spectra were measured by spectroscopic ellipsometry method in the range of 0.5-5.0 eV making use of a computer-controlled…”
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    Journal Article
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    Pulsed microwave sensor on heavily doped semiconductor substrate by Suziedelis, A., Asmontas, S., Gradauskas, J., Silenas, A., Lucun, A., Cerskus, A., Paskevic, C., Zalys, O., Anbinderis, M.

    “…Design of unsophisticated cost-effective planar asymmetric microwave diode is proposed. Simplified technological process and use of simplex semiconductor…”
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    Conference Proceeding
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    Electron transport in an [In.sub.0.52][Al.sub.0.48]As/[In.sub.0.53][Ga.sub.0.47]As/[In.sub.0.52][Al.sub.0 .48]As quantum well with a δ-Si doped barrier in high electric fields by Vasil'evskii, I.S, Galiev, G.B, Matveev, Yu. A, Klimov, E.A, Pozela, J, Pozela, K, Suziedelis, A, Paskevic, C, Juciene, V

    Published in Semiconductors (Woodbury, N.Y.) (01-07-2010)
    “…The electron conduction in a two-dimensional channel of an [In.sub.0.52][Al.sub.0.48]As/[In.sub.0.53][Ga.sub.0.47]As/[In.sub.0.52][Al.sub.0 .48]As quantum well…”
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    Journal Article
  5. 5

    Electron transport in an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well with a {delta}-Si doped barrier in high electric fields by Vasil'evskii, I. S., Galiev, G. B., Matveev, Yu. A., Klimov, E. A., Pozela, J., Pozela, K., Suziedelis, A., Paskevic, C., Juciene, V.

    Published in Semiconductors (Woodbury, N.Y.) (15-07-2010)
    “…The electron conduction in a two-dimensional channel of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well (QW)…”
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    Journal Article
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    Drift velocity of electrons in quantum wells in high electric fields by Mokerov, V. G., Vasil’evskii, I. S., Galiev, G. B., Požela, J., Požela, K., Sužiedėlis, A., Jucienė, V., Paškević, Č.

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2009)
    “…It is experimentally found that the maximum drift velocity of electrons in quantum wells of differently arranged AlGaAs/GaAs heterostructures and…”
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    Journal Article
  7. 7

    Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields by Vasil’evskii, I. S., Galiev, G. B., Matveev, Yu. A., Klimov, E. A., Požela, J., Požela, K., Sužiedėlis, A., Paškevič, Č., Jucienė, V.

    Published in Semiconductors (Woodbury, N.Y.) (01-07-2010)
    “…The electron conduction in a two-dimensional channel of an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As quantum well (QW) with a δ-Si doped barrier…”
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    Journal Article
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    Investigation of microwave properties of planar heterojunction diodes in Ka frequency range using probe station by Suziedelis, A., Asmontas, S., Gradauskas, J., Lucun, A., Cerskus, A., Paskevic, C., Anbinderis, T.

    “…Usual method to investigate high frequency parameters of the microwave diodes is to mount the single diode into microwave transmission line with following…”
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    Conference Proceeding
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