Search Results - "Paskaleva, A."

A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures by Spassov, D., Skeparovski, A., Paskaleva, A., Novkovski, N.

“…The electrical properties of multilayered HfO2/Al2O3/HfO2/SiO2 and ZrO2/Al2O3/ZrO2/SiO2 metal-oxide semiconductor capacitors were investigated in order to…”
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Mechanical and biochemical properties of human cervical tissue by Myers, K.M., Paskaleva, A.P., House, M., Socrate, S.

“…The mechanical integrity of cervical tissue is crucial for maintaining a healthy gestation. Altered tissue biochemistry can cause drastic changes in the…”
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Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs by ATANASSOVA, E, PASKALEVA, A

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Blast pressures and waveforms of consumer firecrackers by Kirschman, J., Pokutta-Paskaleva, A., Courtney, A., Courtney, M.

“…Current methods for testing blast pressures produced by fireworks are ad hoc and differ substantially from established methods for assessing injury risks from…”
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Influence of Hf doping on interfacial layers of Ta2O5 stacks studied by ellipsometry by Karmakov, Y., Paskaleva, A.

“…► Interfacial layer modifications of Hf-doped Ta2O5 stacks were studied by VASE. ► Constituent volume fraction depth profiles and elemental profiles were…”
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Resistive switching in TiO2-based metal–insulator–metal structures with Al2O3 barrier layer at the metal/dielectric interface by Hudec, B., Paskaleva, A., Jančovič, P., Dérer, J., Fedor, J., Rosová, A., Dobročka, E., Fröhlich, K.

“…In this work we systematically study the effect of the Al2O3 barrier layer thickness on the resistive switching properties of Al2O3/TiO2 bilayer grown by…”
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Interfacial layers in Ta2O5 based stacks and constituent depth profiles by spectroscopic ellipsometry by Karmakov, Y., Paskaleva, A., Atanassova, E.

“…► A novel approach to spectroscopic ellipsometry data interpretation with a proper algorithm was applied for characterization of the interfacial layers of…”
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High-k HfO2-Ta2O5 mixed layers: Electrical characteristics and mechanisms of conductivity by ATANASSOVA, E, GEORGIEVA, M, SPASSOV, D, PASKALEVA, A

“…The electrical properties of mixed HfO2-Ta2O5 films (10; 15 nm) deposited by rf sputtering on Si were studied from the viewpoint of their applications as…”
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Doped Ta2O5 and mixed HfO2–Ta2O5 films for dynamic memories applications at the nanoscale by Atanassova, E., Paskaleva, A., Spassov, D.

“…The doping of Ta2O5 films with a proper element or its mixing with another high-k dielectric as a breakthrough to extend the potential of Ta2O5 toward meeting…”
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Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity by SPASSOV, D, ATANASSOVA, E, PASKALEVA, A

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Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack by Atanassova, E., Novkovski, N., Spassov, D., Paskaleva, A., Skeparovski, A.

“…[Display omitted] •Hf-doped Ta2O5 exhibits improved TDDB characteristics with respect to the pure Ta2O5.•The hard breakdown in Hf-doped Ta2O5 is a complex…”
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Clinical Laboratory Tests in Some Acute Exogenous Poisonings by Tufkova, Stoilka G, Yankov, Ivan V, Paskaleva, Diana A

“…There is no specific toxicological screening of clinical laboratory parameters in clinical toxicology when it comes to acute exogenous poisoning. To determine…”
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Spectroscopic ellipsometry of very thin tantalum pentoxide on Si by Karmakov, I., Konova, A., Atanassova, E., Paskaleva, A.

“…Variable angle spectroscopic ellipsometry of very thin T 2O 5 layers on Si and the previously published appropriate algorithm for data interpretation have been…”
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Electrical characteristics of Ti-doped Ta2O5 stacked capacitors by ATANASSOVA, E, SPASSOV, D, PASKALEVA, A, GEORGIEVA, M, KOPRINAROVA, J

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Evidence for a conduction through shallow traps in Hf-doped Ta2O5 by PASKALEVA, A, ATANASSOVA, E

“…The influence of Hf-doping on the leakage currents and conduction mechanisms in Ta2O5 stacks is investigated. The current conduction mechanisms as well as the…”
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Composition of Ta2O5 stacked films on N2O- and NH3-nitrided Si by Atanassova, E., Spassov, D., Paskaleva, A., Kostov, K.

“…The composition and microstructure of rf sputtered 20 nm Ta2O5 on N2O or NH3 Rapid Thermal Nitrided (RTN) Si substrates have been investigated by X-ray…”
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Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks by ATANASSOVA, E, PASKALEVA, A, NOVKOVSKI, N

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Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks by PASKALEVA, A, TAPAJNA, M, DOBROCKA, E, HUSEKOVA, K, ATANASSOVA, E, FRÖHLICH, K

“…Hf-doped Ta2O5 thin films are studied with respect to their composition, dielectric and electrical properties. The incorporation of Hf is performed by…”
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Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks by ATANASSOVA, E, NOVKOVSKI, N, PASKALEVA, A, SPASSOV, D

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Constant current stress of lightly Al-doped Ta2O5 by Atanassova, E., Spassov, D., Novkovski, N., Paskaleva, A.

“…The response of lightly Al-doped Ta2O5 stacked films (6nm) to constant current stress (CCS) under gate injection (current stress in the range of 1 to 30mA/cm2…”
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