Search Results - "Parveg, Dristy"

220-240-GHz High-Gain Phase Shifter Chain and Power Amplifier for Scalable Large Phased-Arrays by Najmussadat, Md, Ahamed, Raju, Varonen, Mikko, Parveg, Dristy, Kantanen, Mikko, Halonen, Kari A. I.

“…This paper focuses on the design aspects of the key components for a scalable phased-array system over the 200 GHz frequency range. A high-gain phase shifter…”
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Wideband mm-Wave CMOS Slow Wave Coupler by Parveg, Dristy, Varonen, Mikko, Karaca, Denizhan, Halonen, Kari

“…In this letter, we have presented a design of on-chip millimeter-wave 3-dB quadrature coupler that utilizes the coupled slow wave coplanar waveguide. The…”
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Design of a D-Band CMOS Amplifier Utilizing Coupled Slow-Wave Coplanar Waveguides by Parveg, Dristy, Varonen, Mikko, Karaca, Denizhan, Vahdati, Ali, Kantanen, Mikko, Halonen, Kari A. I.

“…This paper validates a design and modeling methodology of coupled slow-wave waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that…”
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A 200-250-GHz Phase Shifter Utilizing a Compact and Wideband Differential Quadrature Coupler by Ahamed, Raju, Varonen, Mikko, Parveg, Dristy, Najmussadat, Md, Tawfik, Yehia, Halonen, Kari A. I.

“…This letter presents the design of a 200-250-GHz compact vector modulator (VM) phase shifter in a 0.13-μm SiGe bipolar complementary metal-oxide-semiconductor…”
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A 53-117 GHz LNA in 28-nm FDSOI CMOS by Karaca, Denizhan, Varonen, Mikko, Parveg, Dristy, Vahdati, Ali, Halonen, Kari A. I.

“…This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power…”
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Experimental Verification of a Plane-Wave Field Synthesis Technique for MIMO OTA Antenna Testing by Khatun, Afroza, Kolmonen, Veli-Matti, Hovinen, Veikko, Parveg, Dristy, Berg, Markus, Haneda, Katsuyuki, Nikoskinen, Keijo I., Salonen, Erkki T.

“…This paper evaluates the feasibility of a plane-wave field synthesis (PWS) technique for multiple-input multiple-output (MIMO) over-the-air (OTA) test…”
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An mm-Wave CMOS I-Q Subharmonic Resistive Mixer for Wideband Zero-IF Receivers by Parveg, Dristy, Varonen, Mikko, Safaripour, Amirreza, Kangaslahti, Pekka, Kantanen, Mikko, Tikka, Tero, Gaier, Todd, Halonen, Kari A. I., Hajimiri, Ali

“…In this letter, we propose a novel wideband subharmonically pumped fully differential I-Q resistive mixer architecture, which eliminates the necessity for…”
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90 GHz CMOS Phased-Array Transmitter Integrated on LTCC by Vahdati, Ali, Lamminen, Antti, Varonen, Mikko, Saily, Jussi, Lahti, Markku, Kautio, Kari, Lahdes, Manu, Parveg, Dristy, Karaca, Denizhan, Halonen, Kari A. I.

“…This paper presents the design of a 90 GHz phased-array transmitter front end on low-temperature co-fired ceramic (LTCC) technology. The monolithic microwave…”
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CMOS I/Q Subharmonic Mixer for Millimeter-Wave Atmospheric Remote Sensing by Parveg, Dristy, Varonen, Mikko, Kangaslahti, Pekka, Safaripour, Amirreza, Hajimiri, Ali, Tikka, Tero, Gaier, Todd, Halonen, Kari A. I.

“…A compact second harmonic 180 GHz I/Q balanced resistive mixer is realized in a 32-nm SOI CMOS technology for atmospheric remote sensing applications. The MMIC…”
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A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology by Ahamed, Raju, Varonen, Mikko, Holmberg, Jan, Parveg, Dristy, Kantanen, Mikko, Saijets, Jan, Halonen, Kari A. I.

“…This paper presents the design of a millimeter-wave wideband receiver front-end in a 0.13  μ m SiGe BiCMOS technology for phased array applications. The…”
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Design and Analysis of an E-Band Power Detector in 0.13 μm SiGe BiCMOS Technology by Ahamed, Raju, Varonen, Mikko, Parveg, Dristy, Najmussadat, Md, Kantanen, Mikko, Halonen, Kari A. I.

“…This paper presents a high dynamic range E-band power detector in a 0.13 μm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor…”
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W-band phase shifter in 28-nm CMOS by Vahdati, Ali, Parveg, Dristy, Varonen, Mikko, Kärkkäinen, Mikko, Karaca, Denizhan, Halonen, Kari A. I.

“…In this article, a compact W-band differential I–Q phase shifter is designed and implemented using 28-nm CMOS technology. The phase shifter is capable of…”
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Cryogenic Single-Chip Multi-Channel LNA by Varonen, Mikko, Parveg, Dristy, Lehtisyrja, Lassi, Sipola, Hannu, Saijets, Jan

“…This paper presents the integration of multiple cryogenic low-noise amplifiers (LNAs) on a single chip designed for superconducting nanowire single photon…”
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A Full Ka-Band GaN-on-Si Low-Noise Amplifier by Parveg, Dristy, Varonen, Mikko, Kantanen, Mikko

“…In this paper we present the design of a full Ka-band low-noise amplifier implemented in a 100-nm GaN HEMT on a high-resistivity silicon substrate technology…”
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Silicon-Micromachined Waveguide Systems as a Packaging Solution for sub -THz and THz Active Circuits by Ermolov, Vladimir, Lamminen, Antti, Varonen, Mikko, Ailas, Henri, Lahti, Markku, Forsten, Henrik, Kaunisto, Mikko, Kantanen, Mikko, Parveg, Dristy, Pursula, Pekka

“…The paper presents utilization of Silicon-micromachined waveguide systems as a packaging solution for Sub-THz and THz active MMICs. The developed integration…”
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Receive and Transmit Beamforming SiGe BiCMOS ICs for Scalable E-Band Phased Arrays by Varonen, Mikko, Lamminen, Antti, Kantanen, Mikko, Holmberg, Jan, Rantala, Arto, Lahdes, Manu, Saily, Jussi, Parveg, Dristy, Kaunisto, Mikko, Aurinsalo, Jouko

“…This paper presents E-band 4 and 16 element receive (RX) and transmit (TX) phase shifter ICs for a scalable RF beamforming architecture. The chips are…”
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Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology by Najmussadat, Md, Ahamed, Raju, Varonen, Mikko, Parveg, Dristy, Tawfik, Yehia, Halonen, Kari A. I.

“…In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz…”
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Design of an E-band Doherty Power amplifier by Najmussadat, Md, Ahamed, Raju, Parveg, Dristy, Varonen, Mikko, Halonen, Kari A. I.

“…This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary…”
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Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology by Ahamed, Raju, Varonen, Mikko, Parveg, Dristy, Saijets, Jan, Halonen, Kari A. I.

“…This paper presents the design of high-performance E-band single-pole double-through (SPDT) switch and low noise amplifier (LNA) as a part of transceiver…”
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Demonstration of a 0.325-THz CMOS amplifier by Parveg, Dristy, Karaca, Denizhan, Varonen, Mikko, Vahdati, Ali, Halonen, Kari A. I.

“…This paper presents a 0.325-THz single-ended amplifier designed in a 28-nm FDSOI CMOS technology. The amplifier consists of four common-source gain stages and…”
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