Search Results - "Parrish, J.T."

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  1. 1

    1 /spl mu/m MOSFET VLSI technology. III. Logic circuit design methodology and applications by Cook, P.W., Schuster, S.E., Parrish, J.T., DiLonardo, V., Freedman, D.R.

    Published in IEEE journal of solid-state circuits (01-04-1979)
    “…For pt. II see ibid., vol.SC14, no.2, p.247 (1979). Logic circuits were designed and fabricated in a 1 /spl mu/m silicon-gate MOSFET technology. First,…”
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    Journal Article
  2. 2

    1 µm MOSFET VLSI technology: Part III-Logic circuit design methodology and applications by Cook, P.W., Schuster, S.E., Parrish, J.T., DiLonardo, V., Freedman, D.R.

    Published in IEEE transactions on electron devices (01-04-1979)
    “…Logic circuits were designed and fabricated in a 1 µm silicon-gate MOSFET technology. First, conventional random logic chip images using the largely…”
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    Journal Article
  3. 3

    Experimental study of laser formed connections for LSI wafer personalization by Kuhn, L., Schuster, S.E., Zory, P.S., Lynch, G.W., Parrish, J.T.

    Published in IEEE journal of solid-state circuits (01-08-1975)
    “…Experimental studies of connections formed in MOS-type structures by nanosecond dye laser pulses are described. Of particular importance are results relating…”
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    Journal Article