Search Results - "Parodos, T"

HgCdTe MWIR back-illuminated electron-initiated avalanche photodiode arrays by REINE, M. B, MARCINIEC, J. W, WONG, K. K, PARODOS, T, MULLARKEY, J. D, LAMARRE, P. A, TOBIN, S. P, GUSTAVSEN, K. A, WILLIAMS, G. M

“…This paper reports data for back-illuminated planar n-on-p HgCdTe electron-initiated avalanche photodiode (e-APD) 4 × 4 arrays with large unit cells (250 × 250…”
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Critical Thickness of Exponentially and Linearly Graded HgCdTe/CdZnTe by Fulk, C., Parodos, T., Lamarre, P., Tobin, S., LoVecchio, P., Markunas, J.

“…We have investigated the glide of strain-relaxing dislocations in closely lattice matched, liquid phase epitaxially (LPE) grown, HgCdTe. A generalized LPE…”
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Microstructural Characterization of CdTe Surface Passivation Layers by Zhao, W.F., Cook, J., Parodos, T., Tobin, S., Smith, David J.

“…The microstructure of CdTe (CT) surface passivation layers deposited on HgCdTe (MCT) heterostructures has been evaluated using transmission electron microscopy…”
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Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes by Reine, M.B., Marciniec, J.W., Wong, K.K., Parodos, T., Mullarkey, J.D., Lamarre, P.A., Tobin, S.P., Minich, R.W., Gustavsen, K.A., Compton, M., Williams, G.M.

“…This article reports new characterization data for large-area (250  μ m ×  250  μ m) back-illuminated planar n -on- p HgCdTe electron-initiated avalanche…”
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Effect of dislocations on VLWIR HgCdTe photodiodes by PARODOS, T, FITZGERALD, E. A, HU, S, REINE, M, LOVECCHIO, P, CASTER, A, TOBIN, S, MARCINIEC, J, WELSCH, J, HAIRSTON, A, LAMARRE, P, RIENDEAU, J, WOODWARD, B

“…The effects of dislocations on very-long-wavelength infrared (VLWIR) HgCdTe photodiodes (cutoff wavelength >14 µm at 40 K) have been determined experimentally…”
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Characterization of Dislocations in HgCdTe Heteroepitaxial Layers Using a New Substrate Removal Technique by Lamarre, P., Fulk, C., D’Orsogna, D., Bellotti, E., Smith, F., LoVecchio, P., Reine, M. B., Parodos, T., Marciniec, J., Tobin, S. P., Markunas, J.

“…Dislocations are known to influence the electrical and optical properties of long-wavelength infrared (LWIR) HgCdTe detectors and have been shown to limit the…”
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Advances in composition control for 16 mu m LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60 K by Tobin, S P, Weiler, M H, Hutchins, M A, Parodos, T, Norton, P W

“…With good composition control in both p-type cap and n-type base LPE layers, it is possible to make barrier-free two-layer P-on-n HgCdTe heterojunction…”
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MOVPE growth of HgCdTe for high performance 3-5 mu m photodiodes operating at 100-180 K by Mitra, P, Case, F C, Reine, M B, Parodos, T, Tobin, S P, Norton, P W

“…New results are reported on the growth of high performance medium wavelength infrared (3-5 mu m) (MWIR) HgCdTe photodiodes in the three-layer P-n-N…”
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Growth and characterization of inTISb for IR-detectors by Karam, N. H., Sudharsanan, R., Parodos, T., Dodd, M. A.

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Growth and Characterization of InTlSb for IR-Detectors by Karam, N H, Sudharsanan, R, Parodos, T, Dodd, M A

“…Epitaxial In^sub 1-x^Tl^sub x^Sb films with compositions up to x = 0.1 have been demonstrated using the metalorganic chemical vapor deposition technique on…”
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CdZnTe photodiode arrays for medical imaging by Sudharsanan, R, Parodos, T, Ruzin, A, Nemirovsky, Y, Karam, N H

“…In this paper, we report on the design, fabrication, and performance of the first CdZnTe Schottky photodiode arrays for radiation detection. High pressure…”
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Growth of device quality GaN at 550 °C by atomic layer epitaxy by Karam, N. H., Parodos, T., Colter, P., McNulty, D., Rowland, W., Schetzina, J., El-Masry, N., Bedair, Salah M.

“…GaN single crystal films were grown by atomic layer epitaxy at 550 °C. The room temperature photoluminescence properties of these low-temperature-grown films…”
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MOVPE growth of HgCdTe for high performance 3-5 mm photodiodes operating at 100-180K by Mitra, P, Case, F C, Reine, M B, Parodos, T

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MOVPE growth of HgCdTe for high performance 3–5 µm photodiodes operating at 100–180K by Mitra, P., Case, F. C., Reine, M. B., Parodos, T., Tobin, S. P., Norton, P. W.

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Advances in comparison control for 16 mm LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60K by Tobin, S P, Weiler, M H, Hutchins, M A, Parodos, T, Norton, P W

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Advances in composition control for 16 µm LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60K by Tobin, S. P., Weiler, M. H., Hutchins, M. A., Parodos, T., Norton, P. W.

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ADVANCES IN COMPOSITION CONTROL FOR 16 micrometer LPE P-ON-n HgCdTe HETEROJUNCTION PHOTODIODES FOR REMOTE SENSING APPLICATIONS AT 60 K by Tobin, S P, Weiler, M H, Hutchins, M A, Parodos, T, Norton, P W

“…With good composition control in both p-type cap and n-type base LPE layers, it is possible to make barrier-free two-layer P-on-n HgCdTe heterojunction…”
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MOVPE GROWTH OF HgCdTe FOR HIGH PERFORMANCE 3-5 micrometer PHOTODIODES OPERATING AT 100-180 K by Mitra, P, Case, F C, Reine, M B, Parodos, T, Tobin, S P, Norton, P W

“…Detector structures were grown in situ by MOVPE on (211)B oriented CdZnTe substrates. The mobilities of the single n-type layers with x values of approx 0.30…”
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