Search Results - "Parker, B.D."

A 10-Gb/s 5-Tap DFE/4-Tap FFE Transceiver in 90-nm CMOS Technology by Bulzacchelli, J.F., Meghelli, M., Rylov, S.V., Rhee, W., Rylyakov, A.V., Ainspan, H.A., Parker, B.D., Beakes, M.P., Aichin Chung, Beukema, T.J., Pepeljugoski, P.K., Shan, L., Kwark, Y.H., Gowda, S., Friedman, D.J.

“…This paper presents a 90-nm CMOS 10-Gb/s transceiver for chip-to-chip communications. To mitigate the effects of channel loss and other impairments, a 5-tap…”
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A 78mW 11.1Gb/s 5-tap DFE receiver with digitally calibrated current-integrating summers in 65nm CMOS by Bulzacchelli, J.F., Dickson, T.O., Deniz, Z.T., Ainspan, H.A., Parker, B.D., Beakes, M.P., Rylov, S.V., Friedman, D.J.

“…Extending data rates to meet the I/O needs of future computing and network systems is complicated by limited channel bandwidth. While a DFE can be used to…”
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Effect of structural parameters on InGaAs/InAlAs 2DEG characteristics by Tischler, M.A., Parker, B.D., Goorsky, M.S., Mooney, P.M.

“…It is shown that superlattices or very thick buffer layers are not necessary to achieve high mobility in InGaAs/InAlAs 2DEG structures. However, an InAlAs…”
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Thermal stability of MBE-grown Si-doped InGaAs/InAlAs heterostructures by Tischler, M.A., Parker, B.D., DeGelormo, J., Jackson, T.N., Cardone, F., Goorsky, M.S.

“…The effects of uncapped rapid thermal annealing in an AsH/sub 3/ ambient on the thermal stability of InGaAs/InAlAs two dimensional electron gas (2DEG)…”
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