Search Results - "Park, Soon Oh"
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Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra-large-scale integrated dynamic random access memory application
Published in Applied physics letters (06-11-1995)“…(Ba,Sr)TiO3 (BST) thin films with thicknesses ranging from 15 to 50 nm are prepared by a rf magnetron sputtering on Pt/SiO2/Si substrates. The dielectric…”
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Leakage current of sol-gel derived Pb(Zr, Ti)O3 thin films having Pt electrodes
Published in Applied physics letters (22-11-1999)“…The electrical conduction behaviors of sol-gel derived Pb(Zr, Ti)O3 (PZT) thin films on Pt electrodes were analyzed based on a fully depleted film, thermionic…”
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INFLUENCE OF La0.5Sr0.5CoO3 HETEROSTRUCTURE ELECTRODES ON Pb(Zr,Ti)O3 THIN FILM PROPERTIES
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 9B, pp. 5437-5440. 2000 (2000)“…The effect of multiple-layer bottom electrodes including a La0.5Sr0.5CoO3 (LSCO) layer on the ferroelectric and electric fatigue properties of the…”
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Plasma-Assisted Dry Etching of Ferroelectric Capacitor Modules and Application to a 32M Ferroelectric Random Access Memory Devices with Submicron Feature Sizes
Published in Japanese Journal of Applied Physics (01-01-2002)“…Authors report the ferroelectric property of patterned submicron capacitor modules with a stack height of 380 nm, where the 100 nm-thick Pb(Zr, Ti)O3 (PZT)…”
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A Simulation Study for Designing a Rail Terminal in a Container Port
Published in Proceedings of the 2006 Winter Simulation Conference (01-12-2006)“…Rail terminals in port container terminals play an important role for transshipping containers between rail wagons and port container terminals. This paper…”
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Characteristics of Ir etching using Ar/Cl2 inductively coupled plasmas
Published in Journal of materials science (01-09-2005)“…Since the etching of Ir can be considered to be problematic, due to its chemical inertness; here, the plasma etching of Ir films, using Ar/Cl2 gas in an…”
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Etching characteristics of photoresist and low-k dielectrics by Ar/O2 ferrite-core inductively coupled plasmas
Published in Microelectronic engineering (01-02-2008)“…We have investigated the characteristics of Ar/O2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled…”
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Semiconductor nanowires surrounded by cylindrical Al2O3 shells
Published in Journal of electronic materials (01-11-2003)“…The GaN, GaP, InP, Si3N4, SiO2/Si, SiC, and ZnO semiconductor nanowires were synthesized by a variety of growth methods, and they were wrapped cylindrically…”
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The effect of stress on the electrical properties of PZT thin films
Published in Ferroelectrics (01-01-2001)“…We have investigated the effect of externally controlled bi-axial stress on the electrical properties of Pb(Zr, Ti)O 3 (PZT) thin films. The PZT thin films…”
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Journal Article Conference Proceeding -
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Etching characteristics of photoresist and low- k dielectrics by Ar/O 2 ferrite-core inductively coupled plasmas
Published in Microelectronic engineering (01-02-2008)“…We have investigated the characteristics of Ar/O 2 plasmas in terms of the photoresist (PR) and low- k material etching using a ferrite-core inductively…”
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Highly Reliable 0.15 µm/14 F 2 Cell Ferroelectric Random Access Memory Capacitor Using SrRuO 3 Buffer Layer
Published in Japanese Journal of Applied Physics (01-04-2006)Get full text
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Paclitaxel-loaded poly(lactide-co-glycolide)/poly(ethylene vinyl acetate) composite for stent coating by ultrasonic atomizing spray
Published in Science and technology of advanced materials (01-04-2012)“…The mixture of poly(lactide-co-glycolide) (PLGA) and poly(ethylene vinyl acetate) (PEVA) forms a homogeneous liquid in an organic solvent such as…”
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Correlation of the optical gap of (Ba,Sr) y TiO 2+y thin films with film composition
Published in Thin solid films (01-06-2000)Get full text
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Correlation of the optical gap of (Ba,Sr) sub(y)TiO sub(2+y) thin films with film composition
Published in Thin solid films (01-01-2000)“…A series of 26 (Ba sub(1-x)Sr sub(x)) sub(y)TiO sub(2-y) thin films with 0.22 less than or equal to y less than or equal to 1.01 and x < 0.07 were grown by…”
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Influence of La 0.5 Sr 0.5 CoO 3 Heterostructure Electrodes on Pb(Zr,Ti)O 3 Thin Film Properties
Published in Japanese Journal of Applied Physics (01-09-2000)“…The effect of multiple-layer bottom electrodes including a La 0.5 Sr 0.5 CoO 3 (LSCO) layer on the ferroelectric and electric fatigue properties of the PbZr…”
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Journal Article -
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Enhanced Retention Characteristics of Pb(Zr, Ti)O 3 Capacitors by Ozone Treatment
Published in Japanese Journal of Applied Physics (01-08-2001)“…Effects of ozone treatment and charged defects on retention characteristics of Ir/IrO 2 /Pb(Zr, Ti)O 3 (PZT)/Pt/IrO 2 /Ir capacitors were systematically…”
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The effects of capping barrier layers on the compositional and structural variations of integrated Pb(Zr, Ti)O3 ferroelectric capacitor having the dimension 3 × 3 μm2
Published in Journal of materials research (01-05-1999)“…Structure and composition of the ferroelectric Pb(Zr, Ti)O3 layers in a capacitor of the ferroelectric random-access memory (FeRAM) device having a density of…”
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