Search Results - "Park, Seong‐Geon"

Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory by Zhao, Liang, Park, Seong-Geon, Magyari-Köpe, Blanka, Nishi, Yoshio

“…Doping has often been considered for performance improvement of resistive memories (ReRAM), but the effects of many different dopants have not been…”
Get full text

ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels by Kamiya, Katsumasa, Young Yang, Moon, Park, Seong-Geon, Magyari-Köpe, Blanka, Nishi, Yoshio, Niwa, Masaaki, Shiraishi, Kenji

“…We study the ON-OFF switching mechanism of oxide-based resistive-random-access-memories using theoretical calculations. Electron deficient vacancies (V O ) up…”
Get full text

Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance by Seo, Hyun Kyu, Ryu, Jin Joo, Lee, Su Yeon, Park, Minsoo, Park, Seong‐Geon, Song, Wooseok, Kim, Gun Hwan, Yang, Min Kyu

“…As a selection device for highly integrated crossbar‐type data storage, the chalcogenide‐based ovonic threshold switch (OTS) shows high selectivity, fast…”
Get full text

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories by Kamiya, Katsumasa, Yang, Moon Young, Nagata, Takahiro, Park, Seong-Geon, Magyari-Köpe, Blanka, Chikyow, Toyohiro, Yamada, Keisaku, Niwa, Masaaki, Nishi, Yoshio, Shiraishi, Kenji

“…We report that V sub(O) cohesion-isolation transition caused by carrier injection/removal is a generalized resistance switching mechanism of binary-oxide-based…”
Get full text

Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device by Shin, Hee Ju, Seo, Hyun Kyu, Lee, Su Yeon, Park, Minsoo, Park, Seong-Geon, Yang, Min Kyu

“…TiN/AlOx:Ti/TaOx/TiN memory devices using bilayer resistive switching memory demonstrated excellent durability and capability of QLC (quad-level cell) memory…”
Get full text

First principles modeling of charged oxygen vacancy filaments in reduced TiO2–implications to the operation of non-volatile memory devices by Zhao, Liang, Park, Seong-Geon, Magyari-Köpe, Blanka, Nishi, Yoshio

“…First principles density functional theory calculations were employed to study the band structure of reduced rutile TiO2 and the implications of oxygen vacancy…”
Get full text

A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM) by Seong-Geon Park, Min Kyu Yang, Hyunsu Ju, Dong-Jun Seong, Jung Moo Lee, Eunmi Kim, Seungjae Jung, Lijie Zhang, Yoo Cheol Shin, In-Gyu Baek, Jungdal Choi, Ho-Kyu Kang, Chilhee Chung

“…A non-linear RRAM cell with sub-1μA ultralow operating current has been successfully fabricated for high density vertical ReRAM (VRRAM) applications. A uniform…”
Get full text

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in \hbox for Resistive Switching Memory by Seong-Geon Park, Magyari-Köpe, Blanka, Nishi, Y

“…The electronic properties of rutile TiO 2 with an ordered arrangement of oxygen vacancies show a transition from a resistive to conductive oxide as a function…”
Get full text

Electric field dependent switching and degradation of Resistance Random Access Memory by Hosotani, K., Seong-Geon Park, Nishi, Y.

“…We have developed a novel method and model to describe the switching and degradation phenomena of uni-polar type ReRAM using conventional electric field…”
Get full text

Highly reliable ReRAM technology with encapsulation process for 20nm and beyond by Dong-Jun Seong, Min Kyu Yang, Hyunsu Ju, Jung Moo Lee, Eunmi Kim, Seungjae Jung, Jinwoo Lee, Gun Hwan Kim, Seol Choi, Lijie Zhang, Seong-Geon Park, Youn Seon Kang, In-Gyu Baek, Jungdal Choi, Ho-Kyu Kang, Eunseung Jung

“…ReRAM cell performance and reliability have been improved through process optimization. Encapsulated ReRAM cell with SiN capping layer shows excellent…”
Get full text

First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides by Magyari-Köpe, Blanka, Park, Seong Geon, Lee, Hyung-Dong, Nishi, Yoshio

“…Resistance change random access memories based on transition metal oxides had been recently proposed as promising candidates for the next generation of memory…”
Get full text

Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition by Cho, Hag-Ju, Lee, Hye Lan, Park, Hong Bae, Jeon, Taek Soo, Park, Seong Geon, Jin, Beom Jun, Kang, Sang Bom, Shin, Yu Gyun, Chung, U-In, Moon, Joo Tae

“…Post-deposition annealing was investigated for hafnium silicate films deposited on Si substrates by atomic layer deposition. Annealing in NH 3 at 750°C…”
Get full text

Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance (Adv. Electron. Mater. 9/2022) by Seo, Hyun Kyu, Ryu, Jin Joo, Lee, Su Yeon, Park, Minsoo, Park, Seong‐Geon, Song, Wooseok, Kim, Gun Hwan, Yang, Min Kyu

“…OTS Selection Devices Min Kyu Yang, Gun Hwan Kim and co‐workers, in article number 2200161, successfully demonstrate a GeSeTe ovonic threshold switch (OTS)…”
Get full text

First principles modeling of charged oxygen vacancy filaments in reduced TiO 2 –implications to the operation of non-volatile memory devices by Zhao, Liang, Park, Seong-Geon, Magyari-Köpe, Blanka, Nishi, Yoshio

Get full text

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in hbox TiO 2 for Resistive Switching Memory by Park, Seong-Geon, Magyari-Kope, Blanka, Nishi, Yoshio

“…The electronic properties of rutile hbox TiO 2 with an ordered arrangement of oxygen vacancies show a transition from a resistive to conductive oxide as a…”
Get full text

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in [Formula Omitted] for Resistive Switching Memory by Park, Seong-Geon, Magyari-Kope, Blanka, Nishi, Yoshio

“…The electronic properties of rutile with an ordered arrangement of oxygen vacancies show a transition from a resistive to conductive oxide as a function of…”
Get full text

First-principles study of resistance switching in rutile TiO2 with oxygen vacancy by Seong-Geon Park, Magyari-Kope, B., Nishi, Y.

“…The electronic properties of defective rutile TiO 2 with oxygen vacancy were studied by ab initio methods to understand resistance switching mechanism for…”
Get full text

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in Ti02 for Resistive Switching Memory by PARK, Seong-Geon, MAGYARI-KÖPE, Blanka, NISHI, Yoshio

Get full text

PBTI & HCI characteristics for high-k gate dielectrics with poly-Si & MIPS (metal inserted poly-Si stack) gates by Hyung-Suk Jung, Sung Kee Han, Min Joo Kim, Jong Pyo Kim, Yun-Seok Kim, Ha Jin Lim, Seok Joo Doh, Jung Hyoung Lee, Mi Young Yu, Jong-Ho Lee, Nae-In Lee, Ho-Kyu Kang, Seong Geon Park, Sang Bom Kang

“…Reliability characteristics of high-k gate dielectrics with poly-Si gates and metal inserted poly-Si stack (MIPS) gates are investigated in terms of positive…”
Get full text

Breakdown and conduction mechanisms of ALD HfSiON dielectric with TaN gate using carrier separation analysis [MOSFETs] by Seok Joo Doh, Jung Hyoung Lee, Jong Pyo Kim, Jong-Ho Lee, Yun-Seok Kim, Ha-Jin Lim, Hyung-Suk Jung, Sung Kee Han, Min Joo Kim, Nae-In Lee, Ho-Kyu Kang, Seong Geon Park, Sang Bom Kang

“…For the first time, we evaluated the breakdown and conduction mechanisms of ALD HfSiON with TaN gate. In the unstressed HfSiON, hole current dominates the gate…”
Get full text