Search Results - "Park, KeeChan"
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1
A low-power metal–oxide scan driver circuit outputting non-overlapping pulses with DC power-supplied buffer
Published in Journal of Information Display (14-05-2024)“…This paper proposes a novel metal–oxide (MOx) thin-film transistors (TFT)-based scan driver circuit with a DC power-supplied buffer. This circuit has two…”
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2
Effects of the grain boundary protrusion position on the off-state current of polycrystalline silicon thin-film transistors
Published in Journal of Information Display (03-07-2021)“…We report the effects of grain boundary (GB) protrusion on the off-state current (I OFF ) of p-channel polycrystalline silicon thin-film transistors by using…”
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3
Double-gate metal–oxide TFT pixel circuit for improved luminance uniformity of mobile OLED display
Published in Journal of Information Display (14-11-2024)“…The small subthreshold swing (SS) of metal–oxide (MOx) thin-film transistors (TFTs) reduces the data voltage (VDAT) range of the organic light-emitting diode…”
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4
Improving Flicker of Low-Refresh-Rate Driven Active-Matrix Organic Light-Emitting Diode Display
Published in IEEE access (2022)“…The brightness of low-temperature polycrystalline silicon and metal-oxide (LTPO) active-matrix organic light-emitting diode (AMOLED) display under…”
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5
Solution-Processed Aluminum-Zirconium Oxide as a Gate Dielectric for InGaZnO Thin Film Transistors
Published in Journal of electrical engineering & technology (2024)“…This study presents a solution-processed aluminum-zirconium oxide (AlZrO x ) dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors…”
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6
IGZO TFT Gate Driver Circuit With Improved Output Pulse
Published in IEEE journal of the Electron Devices Society (2019)“…We propose a new gate driver circuit with an improved output pulse using depletion mode amorphous indium gallium zinc oxide thin film transistors. The previous…”
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7
Characteristics of Double-Gate Ga-In-Zn-O Thin-Film Transistor
Published in IEEE electron device letters (01-03-2010)“…A Ga-In-Zn-O thin-film transistor with double-gate structure is reported. Enhancement-mode operation that is essential to the constitution of a low-power…”
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8
Novel Driving Methods of Gate Driver for Enhancement- and Depletion-Mode Oxide TFTs
Published in IEEE journal of the Electron Devices Society (2020)“…This paper introduces novel driving methods of the pull-down unit in a gate driver circuit for enhancement- and depletion-mode a-IGZO thin-film transistors…”
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9
Highly Stable Double-Gate Ga-In-Zn-O Thin-Film Transistor
Published in IEEE electron device letters (01-08-2010)“…We report the electrical stability of double-gate (DG) Ga-In-Zn-O thin-film transistors (TFTs). The threshold voltage ( VT ) shift of the DG TFT after 3 h of…”
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10
A Low-Power Scan Driver Circuit for Oxide TFTs
Published in IEEE electron device letters (01-08-2012)“…The scan driver composed of oxide thin-film transistors (TFTs) tends to exhibit anomalously high power consumption because the oxide TFT often has negative…”
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11
Modelling localized charge-injection region of the p-channel low-temperature polycrystalline silicon thin-film transistor
Published in Journal of Information Display (02-01-2018)“…The low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) is the optimal device for the backplane of the organic light-emitting diode…”
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12
Modelling localized charge-injection region of the p-channel low-temperature polycrystalline silicon thin-film transistor
Published in Journal of Information Display (2018)“…The low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) is the optimal device for the backplane of the organic light-emitting diode…”
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13
24‐4: Invited Paper: A study of flickering in the low‐frame‐rate driven AMOLED
Published in SID International Symposium Digest of technical papers (01-06-2023)“…The flickering of low‐temperature polycrystalline silicon and metal‐oxide (LTPO) active‐matrix organic light‐emitting diode (AMOLED) display under…”
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14
A New Pixel Circuit Compensating for Strain-Induced Luminance Reduction in Stretchable Active-Matrix Organic Light Emitting Diode Displays
Published in IEEE electron device letters (01-09-2021)“…A new compensation pixel circuit is proposed for a stretchable active-matrix organic light-emitting diode (AMOLED) display. The proposed pixel circuit utilizes…”
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15
IGZO TFT gate driver circuit with large threshold voltage margin
Published in Displays (01-07-2018)“…•This paper proposes a new gate scan driver using depletion mode a-IGZO TFTs.•The proposed circuit can prevent Q node discharging during the output pulse…”
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16
Gate Driver Circuit Based on Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Capacitive Coupling Effect
Published in IEEE transactions on electron devices (01-04-2022)“…This article proposes a highly reliable gate driver circuit based on amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The proposed…”
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17
Bias and illumination instability analysis of solution-processed a-InGaZnO thin-film transistors with different component ratios
Published in Thin solid films (01-01-2018)“…We investigated the effect of In and Zn component ratios on an amorphous indium‑gallium‑zinc-oxide (a-IGZO) layer in oxide thin-film transistors (TFTs)…”
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18
Solution-processed organic-inorganic hybrid gate insulator for complementary thin film transistor logic circuits
Published in Thin solid films (01-03-2019)“…In this work, we demonstrated a poly(4-vinylphenol-co-methyl methacrylate) (PVP-co-PMMA)/Al2O3 double-stacked insulator deposited by solution process. The…”
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P‐36: Highly Reliable a‐IGZO TFT Gate Driver Circuit to Prevent Leakage Path in Depletion Mode Operation
Published in SID International Symposium Digest of technical papers (01-08-2020)“…This paper proposes new gate driver circuit to prevent VOUT ripple voltage by boosting‐down effect of pull‐up unit. Using only one pull‐down TFT with 50%…”
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20
Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 \text^/\text \cdot \text for High-Speed Operation
Published in IEEE electron device letters (01-04-2018)“…We present high-mobility back channel etch Al-In-Zn-Sn-O/In-Zn-O (IZO) double-layer channel thin-film transistors (TFTs). The field-effect mobility of 53.2…”
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