Search Results - "Park, KeeChan"

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  1. 1

    A low-power metal–oxide scan driver circuit outputting non-overlapping pulses with DC power-supplied buffer by Kim, HyeongMin, Oh, JungSuk, You, YiKyoung, Lee, SangWoon, Park, KeeChan

    Published in Journal of Information Display (14-05-2024)
    “…This paper proposes a novel metal–oxide (MOx) thin-film transistors (TFT)-based scan driver circuit with a DC power-supplied buffer. This circuit has two…”
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    Journal Article
  2. 2

    Effects of the grain boundary protrusion position on the off-state current of polycrystalline silicon thin-film transistors by Yang, JooWon, Kim, Yong-Sang, Jeon, Jae-Hong, Park, KeeChan

    Published in Journal of Information Display (03-07-2021)
    “…We report the effects of grain boundary (GB) protrusion on the off-state current (I OFF ) of p-channel polycrystalline silicon thin-film transistors by using…”
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    Journal Article
  3. 3

    Double-gate metal–oxide TFT pixel circuit for improved luminance uniformity of mobile OLED display by You, YiKyoung, Moon, Kook Chul, Kim, HyeongMin, Oh, JungSuk, Lee, SangWoon, Lim, Jun Hyung, Son, Kyoung Seok, Cho, JaeHyung, Park, KeeChan

    Published in Journal of Information Display (14-11-2024)
    “…The small subthreshold swing (SS) of metal–oxide (MOx) thin-film transistors (TFTs) reduces the data voltage (VDAT) range of the organic light-emitting diode…”
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    Journal Article
  4. 4

    Improving Flicker of Low-Refresh-Rate Driven Active-Matrix Organic Light-Emitting Diode Display by Moon, Kook Chul, Wang, Jie, Gai, Cui-Li, Li, Jun-Feng, Park, Keechan

    Published in IEEE access (2022)
    “…The brightness of low-temperature polycrystalline silicon and metal-oxide (LTPO) active-matrix organic light-emitting diode (AMOLED) display under…”
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    Journal Article
  5. 5

    Solution-Processed Aluminum-Zirconium Oxide as a Gate Dielectric for InGaZnO Thin Film Transistors by Han, Jeong Hun, Lee, So Young, Kim, Hyo Eun, Jeon, Jae-Hong, Park, KeeChan, Moon, Kook Chul, Im, Hwarim, Kim, Yong-Sang

    “…This study presents a solution-processed aluminum-zirconium oxide (AlZrO x ) dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors…”
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    Journal Article
  6. 6

    IGZO TFT Gate Driver Circuit With Improved Output Pulse by Kim, Jin-Ho, Oh, Jongsu, Park, Keechan, Jeon, Jae-Hong, Kim, Yong-Sang

    “…We propose a new gate driver circuit with an improved output pulse using depletion mode amorphous indium gallium zinc oxide thin film transistors. The previous…”
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    Journal Article
  7. 7

    Characteristics of Double-Gate Ga-In-Zn-O Thin-Film Transistor by SON, Kyoung-Seok, JUNG, Ji-Sim, LEE, Kwang-Hee, KIM, Tae-Sang, PARK, Joon-Seok, CHOI, Yun-Hyuk, PARK, Keechan, KWON, Jang-Yeon, KOO, Bonwon, LEE, Sang-Yoon

    Published in IEEE electron device letters (01-03-2010)
    “…A Ga-In-Zn-O thin-film transistor with double-gate structure is reported. Enhancement-mode operation that is essential to the constitution of a low-power…”
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    Journal Article
  8. 8

    Novel Driving Methods of Gate Driver for Enhancement- and Depletion-Mode Oxide TFTs by Oh, Jongsu, Jung, Kyung-Mo, Jung, Eun Kyo, Lee, Jungwoo, Lee, Soo-Yeon, Park, Keechan, Jeon, Jae-Hong, Kim, Yong-Sang

    “…This paper introduces novel driving methods of the pull-down unit in a gate driver circuit for enhancement- and depletion-mode a-IGZO thin-film transistors…”
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    Journal Article
  9. 9

    Highly Stable Double-Gate Ga-In-Zn-O Thin-Film Transistor by Son, Kyoung-Seok, Jung, Ji-Sim, Lee, Kwang-Hee, Kim, Tae-Sang, Park, Joon-Seok, Park, KeeChan, Kwon, Jang-Yeon, Koo, Bonwon, Lee, Sang-Yoon

    Published in IEEE electron device letters (01-08-2010)
    “…We report the electrical stability of double-gate (DG) Ga-In-Zn-O thin-film transistors (TFTs). The threshold voltage ( VT ) shift of the DG TFT after 3 h of…”
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    Journal Article
  10. 10

    A Low-Power Scan Driver Circuit for Oxide TFTs by PI, Jae-Eun, RYU, Minki, PARK, Keechan, HWANG, Chi-Sun, YANG, Shinhyuk, SANG-HEE KO PARK, YOON, Sung-Min, LEEM, Hongkyun, KIM, Younkyung, KIM, Joondong, HWAN SOOL OH

    Published in IEEE electron device letters (01-08-2012)
    “…The scan driver composed of oxide thin-film transistors (TFTs) tends to exhibit anomalously high power consumption because the oxide TFT often has negative…”
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    Journal Article
  11. 11

    Modelling localized charge-injection region of the p-channel low-temperature polycrystalline silicon thin-film transistor by Choi, KwangHyun, Sohn, YoungHa, Moon, GeumJu, Kim, YongSang, Jeon, Jae-Hong, Park, KeeChan

    Published in Journal of Information Display (02-01-2018)
    “…The low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) is the optimal device for the backplane of the organic light-emitting diode…”
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    Journal Article
  12. 12

    Modelling localized charge-injection region of the p-channel low-temperature polycrystalline silicon thin-film transistor by Choi, KwangHyun, Sohn, YoungHa, Moon, GeumJu, Kim, YongSang, Jeon, Jae-Hong, Park, KeeChan

    Published in Journal of Information Display (2018)
    “…The low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) is the optimal device for the backplane of the organic light-emitting diode…”
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    Journal Article
  13. 13

    24‐4: Invited Paper: A study of flickering in the low‐frame‐rate driven AMOLED by Moon, Kook Chul, Li, Jun-Feng, Park, KeeChan

    “…The flickering of low‐temperature polycrystalline silicon and metal‐oxide (LTPO) active‐matrix organic light‐emitting diode (AMOLED) display under…”
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    Journal Article
  14. 14

    A New Pixel Circuit Compensating for Strain-Induced Luminance Reduction in Stretchable Active-Matrix Organic Light Emitting Diode Displays by Kang, Jimin, Kang, Kyeongsoo, Park, Ji-Hwan, Park, Keechan, Lee, Soo-Yeon

    Published in IEEE electron device letters (01-09-2021)
    “…A new compensation pixel circuit is proposed for a stretchable active-matrix organic light-emitting diode (AMOLED) display. The proposed pixel circuit utilizes…”
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  15. 15

    IGZO TFT gate driver circuit with large threshold voltage margin by Kim, Jin-Ho, Oh, Jongsu, Park, KeeChan, Kim, Yong-Sang

    Published in Displays (01-07-2018)
    “…•This paper proposes a new gate scan driver using depletion mode a-IGZO TFTs.•The proposed circuit can prevent Q node discharging during the output pulse…”
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  16. 16

    Gate Driver Circuit Based on Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Capacitive Coupling Effect by Lee, Jungwoo, Hong, Yong-Hoo, Jung, Eun Kyo, Hong, Sara, Jeon, Jae-Hong, Park, Keechan, Im, Hwarim, Kim, Yong-Sang

    Published in IEEE transactions on electron devices (01-04-2022)
    “…This article proposes a highly reliable gate driver circuit based on amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The proposed…”
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    Journal Article
  17. 17

    Bias and illumination instability analysis of solution-processed a-InGaZnO thin-film transistors with different component ratios by Kim, Ji-Hwan, Park, Eung-Kyu, Kim, Min Su, Cho, Hyeong Jun, Lee, Dong-Hoon, Kim, Jin-Ho, Khang, Yoonho, Park, KeeChan, Kim, Yong-Sang

    Published in Thin solid films (01-01-2018)
    “…We investigated the effect of In and Zn component ratios on an amorphous indium‑gallium‑zinc-oxide (a-IGZO) layer in oxide thin-film transistors (TFTs)…”
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  18. 18

    Solution-processed organic-inorganic hybrid gate insulator for complementary thin film transistor logic circuits by Cho, Hyeong Jun, Lee, Dong-Hoon, Park, Eung-Kyu, Kim, Min Su, Lee, So Young, Park, KeeChan, Choe, Heehwan, Jeon, Jae-Hong, Kim, Yong-Sang

    Published in Thin solid films (01-03-2019)
    “…In this work, we demonstrated a poly(4-vinylphenol-co-methyl methacrylate) (PVP-co-PMMA)/Al2O3 double-stacked insulator deposited by solution process. The…”
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  19. 19

    P‐36: Highly Reliable a‐IGZO TFT Gate Driver Circuit to Prevent Leakage Path in Depletion Mode Operation by Lee, Jungwoo, Oh, Jongsu, Jung, Eun Kyo, Park, KeeChan, Lee, Soo-Yeon, Kim, Yong-Sang

    “…This paper proposes new gate driver circuit to prevent VOUT ripple voltage by boosting‐down effect of pull‐up unit. Using only one pull‐down TFT with 50%…”
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  20. 20

    Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 \text^/\text \cdot \text for High-Speed Operation by Yang, Jong-Heon, Choi, Ji Hun, Cho, Sung Haeng, Pi, Jae-Eun, Kim, Hee-Ok, Hwang, Chi-Sun, Park, Keechan, Yoo, Seunghyup

    Published in IEEE electron device letters (01-04-2018)
    “…We present high-mobility back channel etch Al-In-Zn-Sn-O/In-Zn-O (IZO) double-layer channel thin-film transistors (TFTs). The field-effect mobility of 53.2…”
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