Search Results - "Park, Jubong"

Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories by Kim, Seonghyun, Park, Jubong, Woo, Jiyong, Cho, Chunhum, Lee, Wootae, Shin, Jungho, Choi, Godeuni, Park, Sangsu, Lee, Daeseok, Lee, Byoung Hun, Hwang, Hyunsang

“…[Display omitted] ► We fabricated a nanothin layer of Pt/NbO2/Pt stack which shows threshold-switching property. ► The Pt/NbO2/Pt device exhibited a high…”
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Investigation of State Stability of Low-Resistance State in Resistive Memory by Jubong Park, Minseok Jo, Bourim, El Mostafa, Jaesik Yoon, Dong-Jun Seong, Joonmyoung Lee, Wootae Lee, Hyunsang Hwang

“…We investigated the state stability of the low-resistance state (LRS) in a resistive switching memory having a Pt/Cu:MoO x /GdO x /Pt structure. Various…”
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Improved Switching Variability and Stability by Activating a Single Conductive Filament by PARK, Jubong, JUNG, Seungjae, LEE, Wootae, KIM, Seonghyun, SHIN, Jungho, LEE, Daeseok, WOO, Jiyong, HWANG, Hyunsang

“…We successfully fabricated a single-filament-activated resistive memory having limited conductive filament (CF) source through a novel fabrication technique…”
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Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect by PARK, Jubong, JO, Minseok, LEE, Joonmyoung, JUNG, Seungjae, KIM, Seonghyun, LEE, Wootae, SHIN, Jungho, HWANG, Hyunsang

“…Improved switching uniformity and speed were demonstrated using a filament-type resistive memory. By using a gradual reset operation, a leaky high resistance,…”
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Parallel memristive filaments model applicable to bipolar and filamentary resistive switching by Liu, Xinjun, Biju, Kuyyadi P., Lee, Joonmyoung, Park, Jubong, Kim, Seonghyun, Park, Sangsu, Shin, Jungho, Sadaf, Sharif Md, Hwang, Hyunsang

“…The concept of memristive filaments (MFs) is introduced, which is based on the memristors developed by the Hewlett-Packard group. The effects of key parameters…”
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Effect of Program/Erase Speed on Switching Uniformity in Filament-Type RRAM by SHIN, Jungho, PARK, Jubong, LEE, Joonmyoung, PARK, Sangsu, KIM, Seonghyun, LEE, Wootae, KIM, Insung, LEE, Daeseok, HWANG, Hyunsang

“…We investigated the effect of program/erase speed on switching uniformity in filament-type resistive memory with Mo/SiO x /Pt structure. The RRAM device…”
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Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications by LEE, Wootae, PARK, Jubong, SON, Myungwoo, LEE, Joonmyoung, JUNG, Seungjae, KIM, Seonghyun, PARK, Sangsu, SHIN, Jungho, HWANG, Hyunsang

“…We have investigated silicon carbide (SiC) as a new programmable metallization cell material for nonvolatile memory applications. Our Cu/SiC/Pt devices showed…”
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Operation Voltage Control in Complementary Resistive Switches Using Heterodevice by Daeseok Lee, Jubong Park, Seungjae Jung, Godeuni Choi, Joonmyoung Lee, Seonghyun Kim, Jiyong Woo, Siddik, M., Eujun Cha, Hyunsang Hwang

“…For the high-density memory application of resistive random access memory (ReRAM), we study the complementary resistive switch (CRS) behavior of a HfO x -based…”
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Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations by Kim, Seonghyun, Park, Jubong, Jung, Seungjae, Lee, Wootae, Woo, Jiyong, Cho, Chunhum, Siddik, Manzar, Shin, Jungho, Park, Sangsu, Hun Lee, Byoung, Hwang, Hyunsang

“…The nitrogen-doped Ge2Sb2Te5 (GST) programmable metallization cell is investigated to address the low switching voltage and need for a high resistance ratio,…”
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Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays by Wootae Lee, Jubong Park, Jungho Shin, Jiyong Woo, Seonghyun Kim, Choi, G., Seungjae Jung, Sangsu Park, Daeseok Lee, Euijun Cha, Hyung Dong Lee, Soo Gil Kim, Chung, S., Hyunsang Hwang

“…We demonstrate a varistor-type bidirectional switch (VBS) with excellent selection property for future 3D bipolar resistive memory array. A highly non-linear…”
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Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications by Park, Sangsu, Jung, Seungjae, Siddik, Manzar, Jo, Minseok, Park, Jubong, Kim, Seonghyun, Lee, Wootae, Shin, Jungho, Lee, Daeseok, Choi, Godeuni, Woo, Jiyong, Cha, Euijun, Lee, Byoung Hun, Hwang, Hyunsang

“…We propose a selector‐less Pr0.7Ca0.3MnO3 (PCMO) based resistive‐switching RAM (RRAM) for high‐density cross‐point memory array applications. First, we…”
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MIM-type cell selector for high-density and low-power cross-point memory application by Shin, Jungho, Choi, Godeuni, Woo, Jiyong, Park, Jubong, Park, Sangsu, Lee, Wootae, Kim, Seonghyun, Son, Myungwoo, Hwang, Hyunsang

“…A resistive memory can be highly integrated using a cross-point architecture; however, it requires appropriate cell selectors in order to suppress sneak paths…”
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New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory by PARK, Jubong, JO, Minseok, JUNG, Seungjae, LEE, Joonmyoung, LEE, Wootae, KIM, Seonghyun, PARK, Sangsu, SHIN, Jungho, HWANG, Hyunsang

“…We proposed a new set/reset operation scheme to improve the switching uniformity of filament-type resistive memory. By controlling the magnitude of the sweep…”
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Improved switching uniformity of a carbon-based conductive-bridge type ReRAM by controlling the size of conducting filament by Park, Jubong, Jo, Minseok, Lee, Joonmyoung, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Shin, Jungho, Hwang, Hyunsang

“…We investigated the resistive switching properties of a amorphous carbon-based ReRAM device. In order to minimize the fluctuations of switching parameters, we…”
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Noise-Analysis-Based Model of Filamentary Switching ReRAM With \hbox/\hbox Stacks by Daeseok Lee, Joonmyoung Lee, Minseok Jo, Jubong Park, Siddik, M., Hyunsang Hwang

“…In this letter, we propose a model based on noise analysis for the filamentary switching mechanism in resistance random access memory having ZrOx/HfOx bilayer…”
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Co-Occurrence of Threshold Switching and Memory Switching in \hbox/\hbox/\hbox Cells for Crosspoint Memory Applications by Xinjun Liu, Sadaf, Sharif Md, Myungwoo Son, Jubong Park, Jungho Shin, Wootae Lee, Kyungah Seo, Daeseok Lee, Hyunsang Hwang

“…To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a threshold-switching (TS) Pt/NbO 2 /Pt device with a…”
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Effect of \hbox\hbox\hbox Thermal Barrier on Reset Operations in Filament-Type Resistive Memory by Wootae Lee, Siddik, M., Seungjae Jung, Jubong Park, Seonghyun Kim, Jungho Shin, Joonmyoung Lee, Sangsu Park, Myungwoo Son, Hyunsang Hwang

“…We have investigated the effect of a Ge 2 Sb 2 Te 5 (GST) thermal barrier on the reset operations in TiN/Cu/SiC/Pt devices. When the GST film was introduced as…”
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Excellent Selector Characteristics of Nanoscale \hbox for High-Density Bipolar ReRAM Applications by Son, Myungwoo, Lee, Joonmyoung, Park, Jubong, Shin, Jungho, Choi, Godeuni, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang

“…We herein present a nanoscale vanadium oxide (VO 2 ) device with excellent selector characteristics such as a high on/off ratio (>; 50), fast switching speed…”
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Proton Irradiation Effects on Resistive Random Access Memory With ZrO /HfO Stacks by Daeseok Lee, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Jubong Park, Biju, K. P., Minhyeok Choe, Takhee Lee, Hyunsang Hwang

“…In this study, we investigated proton irradiation effects on resistive random access memory (ReRAM) comprising ZrO x /HfO x stacks. After irradiation, changes…”
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Self-Selective Characteristics of Nanoscale \hbox Devices for High-Density ReRAM Applications by Myungwoo Son, Xinjun Liu, Sadaf, S. M., Daeseok Lee, Sangsu Park, Wootae Lee, Seonghyun Kim, Jubong Park, Jungho Shin, Seungjae Jung, Moon-Ho Ham, Hyunsang Hwang

“…We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide (VO x )…”
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